Chenmko CHT4126PT General purpose transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT4126PT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 25 Volts
CURRENT 200 mAmpere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SOT-23
CONSTRUCTION
* PNP Silicon Transistor
.066 (1.70)
.119 (3.04)
.110 (2.80)
.082 (2.10)
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
MARKING
.103 (2.64)
.086 (2.20)
.045 (1.15)
.033 (0.85)
(3) C
CIRCUIT
.007 (0.177)
* QT
.028 (0.70)
.020 (0.50)
.002 (0.05)
* Low colloector-emitter saturation.
* High saturation current capability.
.019 (0.50)
.041 (1.05)
.033 (0.85)
* High current gain.
* Suitable for high packing density.
.018 (0.30)
* Surface mount package. (SOT-23)
(1) B
(2) E
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
-25
V
VCEO
collector-emitter voltage
open base
−
-25
V
VEBO
emitter-base voltage
open collector
−
-4
V
IC
collector current (DC)
−
-200
mA
Ptot
total power dissipation
−
350
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
2. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 2
2004-8
RATING CHARACTERISTIC CURVES ( CHT4126PT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
collector-emitter breakdown voltage
-25
-25
−
V(BR)CEO
IC = -10uA ; IE = 0A
IC = -1mA ; IB = 0A
V
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = -10uA ; IC = 0A
-4
−
V
ICBO
collector cut-off current
IE = 0; VCB = -20 V
−
-50
nA
IEBO
emitter cut-off current
IC = 0; VEB = - 3 V
−
-50
nA
hFE
hFE
VCEsat
DC current gain
DC current gain
collector-emitter saturation
IC = -50 mA; VCE I= -1V; note 3
IC = -2 mA; VCE = -1V
IC = -50 mA; IB = -5 mA
120
−
360
-400
VBEsat
base-emitter saturation voltage
IC = -50 mA; IB = -5 mA
−
-950
mV
Cobo
IE = ie = 0; VCB = - 5 V ; f = 1 MHz −
4.5
10
pF
Cibo
output capacitance
input capacitance
fT
transition frequency
−
MHz
Note
3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
60
IE = ie = 0; VCB = - 5 V ; f = 1 MHz −
IC = -10mA; VCE = - 2 0 V ;
f = 100 MHz
250
−
mV
pF
RATING CHARACTERISTIC CURVES ( CHT4126PT )
250
V CE = 1 .0V
125 °C
200
150
25 °C
100
50
0.1
- 40 °C
0.2
0.5 1
2
5
10 20
I C - COLLECTOR CURRE NT (mA)
50
100
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
0.2
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
200
V CESAT - COLLECTOR EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)
h F E - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
0.25
0.2
0.15
25 °C
0.1
125°C
0.05
0
- 40 °C
1
1
0.8
- 40 °C
125 °C
0.4
= 25V
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
10
C obo
CAPACITANCE (pF)
I CBO - COLLE CTOR CURRENT (nA)
V CE = 1V
0.2
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
10
1
0.1
0.01
25
25 °C
0.6
100
CB
200
Base Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
V
10
100
I C - COLLECTOR CURRENT (mA)
50
75
100
TA - AMBIE NT TEMP ERATURE (° C)
125
8
6
4
C ibo
2
0
0.1
1
REVERSE BIAS VOLTAGE (V)
10
RATING CHARACTERISTIC CURVES ( CHT4126PT )
Typical Characteristics
Noise Figure vs Frequency
Noise Figure vs Source Resistance
6
12
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
V CE = 5.0V
5
4
3
I C = 100 µA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 µA, R S = 2.0 kΩ
0
0.1
1
10
f - FREQUENCY (kHz)
V CE = 5.0V
f = 1.0 kHz
10
I C = 1.0 mA
8
6
4
I C = 100 µA
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
500
500
ts
tf
10
I B1 = I B2 =
Ic
t off
100
TIME (nS)
100
TIME (nS)
100
tr
Ic
t on I
B1 = 10
t on
VBE(OFF) = 0.5V
10
t off I = I =
B1
B2
10
Ic
10
td
1
1
10
I C - COLLECTOR CURRENT (mA)
1
100
1
I
100
Current Gain
1000
V CE = 10 V
f = 1.0 kHz
500
h fe - CURRENT GAIN
h oe - OUTPUT ADMITTANCE ( µmhos)
Output Admittance
1000
10
- COLLECTOR CURRENT (mA)
100
V CE = 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
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