PHOTODIODE InGaAs PIN photodiode G8423/G8373/G5853 series Long wavelength type (up to 2.6 µm) Features Applications l Long cut-off wavelength: 2.6 µm l Gas analysis l 3-pin TO-18 package: low price l Spectrophotometer l Thermoelectrically cooled TO-8 package: low dark current l NIR (near infrared) photometry l Active area: φ0.3 to φ3 mm ■ Specifications / Absolute maximum ratings Type No. G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 D im ensional Package outline Active area Cooling ➀ TO-18 ➁ TO-5 ➂ TO-8 One-stage TE-cooled TO-8 Two-stage TE-cooled ➃ (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 Non-cooled Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) - - -40 to +85 -55 to +125 -40 to +70 -55 to +85 2 1.5 0.2 1.0 ■ Electrical and optical characteristics (Typ. unless otherwise noted) Type No. G8423-03 G8423-05 G8373-01 G8373-03 G5853-103 G5853-11 G5853-13 G5853-203 G5853-21 G5853-23 M easurem ent Spectral Photo Peak condition response se nsitivity sensitivity range w a ve len gth S Element tem perature λp λ λ=λp (°C) (µm) 25 1.2 to 2.6 -10 1.2 to 2.57 -20 1.2 to 2.55 (µm) (A/W) 2.3 1.1 Dark current ID VR=1 V Typ. (µA) 2 5 15 150 0.2 1.5 15 0.1 0.8 7.5 Max. (µA) 20 50 75 1500 2 7.5 150 1 4 75 Cut-off freq ue ncy fc VR=1 V RL=50 Ω -3 dB (MHz) 60 50 15 1.5 60 15 1.5 60 15 1.5 Terminal Shunt capacitance re sista nce Ct Rsh VR=1 V V R =10 m V f=1 MHz (pF) 40 60 200 1800 40 200 1800 40 200 1800 (kΩ) 30 15 3 0.3 300 30 3 600 60 6 D∗ λ=λp NEP λ=λp (cm ·H z 1/2 /W ) (W/Hz1/2) 7 × 10-13 1 × 10-12 5 × 1010 2 × 10-12 8 × 10-12 3 × 10-13 11 1 × 10 7 × 10-13 2 × 10-12 2 × 10-13 11 2 × 10 5 × 10-13 1.8 × 10-12 1 InGaAs PIN photodiode ■ Spectral response G8423/G8373/G5853 series ■ Photo sensitivity temperature characteristic (Typ.) (Typ.) 1.4 TEMPERATURE COEFFICIENT (%/˚C) 2 PHOTO SENSITIVITY (A/W) 1.2 1.0 0.8 T= -20 ˚C 0.6 T= -10 ˚C 0.4 0.2 T=25 ˚C 0 0.8 1.0 1.2 1.4 1.6 1 0 -1 0.8 1.8 2.0 2.2 2.4 2.6 2.8 1 1.2 WAVELENGTH (µm) 1.4 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0216EA KIRDB0206EA ■ Dark current vs. reverse voltage Non-cooled type TE-cooled type (Typ. Ta=25 ˚C) 1 mA (Typ.) 100 µA G8373-03 G5853-13 (T= -10 ˚C) 10 µA DARK CURRENT DARK CURRENT 100 µA G8373-01 G8423-05 10 µA 1 µA G5853-23 (T= -20 ˚C) 1 µA G5853-11 (T= -10 ˚C) G5853-21 (T= -20 ˚C) 100 nA G8423-03 G5853-103 (T= -10 ˚C) G5853-203 (T= -20 ˚C) 100 nA 0.01 0.1 1 10 nA 0.01 10 0.1 REVERSE VOLTAGE (V) 1 10 REVERSE VOLTAGE (V) KIRDB0238EA ■ Terminal capacitance vs. reverse voltage KIRDB0218EA ■ Shunt resistance vs. element temperature (Typ. Ta=25 ˚C, f=1 MHz) 10 nF (Typ. VR=10 mV) 1 MΩ G8423-03 G5853-103/-203 100 kΩ 1 nF SHUNT RESISTANCE TERMINAL CAPACITANCE G8373-03 G5853-13/-23 G8373-01 G5853-11/-21 G8423-05 100 pF G8423-05 G8373-01 G5853-11/-21 10 kΩ 1 kΩ 100 Ω G8373-03 G5853-13/-23 G8423-03 G5853-103/-203 10 pF 0.1 1 10 REVERSE VOLTAGE (V) -20 0 20 40 60 80 90 100 ELEMENT TEMPERATURE (˚C) KIRDB0239EA 2 10 Ω -40 KIRDB0240EA InGaAs PIN photodiode ■ Thermistor temperature characteristic 40 ELEMENT TEMPERATURE (˚C) RESISTANCE (Ω) ■ Cooling characteristics of TE-cooler (Typ.) 106 105 10 10 G8423/G8373/G5853 series 4 3 20 ONE-STAGE TE-COOLED TYPE 0 -20 TWO-STAGE -40 TE-COOLED TYPE -60 -40 -20 0 20 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) KIRDB0116EA KIRDB0231EA ■ Current vs. voltage characteristics of TE-cooler 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.4 CURRENT (A) 1.2 ONE-STAGE TE-COOLED TYPE 1.0 0.8 0.6 TWO-STAGE TE-COOLED TYPE 0.4 0.2 0 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode G8423/G8373/G5853 series ■ Dimensional outlines (unit: mm) 2.7 ± 0.2 3.6 ± 0.2 PHOTOSENSITIVE SURFACE 13 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 0.45 LEAD 4.2 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 WINDOW 3.0 ± 0.1 2.5 ± 0.2 9.2 ± 0.2 4.7 ± 0.1 0.15 MAX. 5.4 ± 0.2 18 MIN. ➁ G8373-03 0.4 MAX. ➀ G8423-03/-05, G8373-01 5.1 ± 0.3 2.5 ± 0.2 1.5 MAX. CASE CASE KIRDA0150EA ➂ G5853-103/-11/-13 KIRDA0151EA ➃ G5853-203/-21/-23 15.3 ± 0.2 15.3 ± 0.2 14 ± 0.2 PHOTOSENSITIVE SURFACE 10 ± 0.2 12 MIN. 0.45 LEAD 6.7 ± 0.2 6.4 ± 0.2 WINDOW 10 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 14 ± 0.2 4.4 ± 0.2 WINDOW 10 ± 0.2 0.45 LEAD 5.1 ± 0.2 10.2 ± 0.2 10.2 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 5.1 ± 0.2 KIRDA0029EB KIRDA0031EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1048E01 Apr. 2001 DN