DCR1595SW DCR1595SW Phase Control Thyristor Replaces October 2000 version, DS4248-5.0 DS4248-6.1 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM ■ High Surge Capability IT(AV) (max) 3020A ITSM (max) 53750A APPLICATIONS 4200V dV/dt* 1000V/µs 400A/µs ■ High Power Drives dI/dt ■ High Voltage Power Supplies * Higher dV/dt selections available ■ DC Motor Control ■ Welding ■ Battery Chargers VOLTAGE RATINGS Part and Ordering Number DCR1595SW42 DCR1595SW41 DCR1595SW40 DCR1595SW39 DCR1595SW38 DCR1595SW37 Repetitive Peak Voltages VDRM and VDRM V 4200 4100 4000 3900 3800 3700 Conditions Tvj = 0˚ to 125˚C, IDRM = IRRM = 400mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: W Lower voltage grades available. (See Package Details for further information) ORDERING INFORMATION Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1595SW38 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/10 www.dynexsemi.com DCR1595SW CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Parameter Symbol Test Conditions Max. Units 3020 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 4745 A Continuous (direct) on-state current - 4370 A 1975 A IT Single Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 3105 A Continuous (direct) on-state current - 2650 A Max. Units 2380 A IT Tcase = 80˚C unless stated otherwise. Parameter Symbol Test Conditions Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 3735 A Continuous (direct) on-state current - 3360 A 1530 A IT Single Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 2405 A Continuous (direct) on-state current - 1996 A IT 2/10 www.dynexsemi.com DCR1595SW SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Test Conditions Units 43.0 kA 9.25 x 106 A2s 53.75 kA 14.4 x 106 A2s 10ms half sine, Tcase = 125˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) on-state current Max. 10ms half sine, Tcase = 125˚C I2t for fusing VR = 0 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Test Conditions Min. Max. Units Double side cooled DC - 0.008 ˚CW Single side cooled Anode DC - 0.016 ˚CW Cathode DC - 0.016 ˚CW Double side - 0.001 ˚CW (with mounting compound) Single side - 0.002 ˚CW On-state (conducting) - 135 ˚C Reverse (blocking) - 125 ˚C Clamping force 70.0kN Tstg Storage temperature range –55 125 ˚C Fm Clamping force 63.0 77.0 kN 3/10 www.dynexsemi.com DCR1595SW SURGE RATINGS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125˚C - 400 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C, gate open - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 200 A/µs Gate source 30V, 10Ω, Non-repetitive - 400 A/µs IRRM/IRRM tr < 0.5µs, Tj = 125˚C Threshold voltage At Tvj = 125˚C - rT On-state slope resistance At Tvj = 125˚C - 1.03 mΩ tgd Delay time VD = 67% VDRM, gate source 30V, 15Ω 0.5 0.19 µs VT(TO) 2 tr = 0.5µs, Tj = 25˚C tq Turn-off time V IT = 5000A, tp = 3.5ms, Tj =125˚C, 550 1000 µs VR = 900V, dIRR/dt = 4A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear IL Latching current Tj = 25˚C, VD = 5V 220 1000 mA IH Holding current Tj = 25˚C, RG–K = ∞, ITM = 500A, IT = 5A 50 250 mA 4/10 www.dynexsemi.com DCR1595SW GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 4 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 400 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table fig. 8 and 9 150 W PG(AV) Mean gate power 10 W - - CURVES 10000 4000 Tj = 125˚C Tj = 125˚C 3500 Instantaneous on-state current, IT - (A) Instantaneous on-state current, IT - (A) 9000 8000 7000 6000 5000 4000 3000 2000 2500 2000 1500 1000 500 1000 0 0.5 3000 1 1.5 2 2.5 Instantaneous on-state voltage, VT - (V) 0 0.6 3 VTM = A + Bln (IT) + C.IT+D.√IT 1.0 1.2 1.4 1.6 1.8 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics VTM EQUATION 0.8 Fig.3 Maximum (limit) on-state characteristics Where A = 0.02866651 B = 0.1590393 C = 1.947584x10–4 D = –5.23298x10–3 these values are valid for Tj = 125˚C for IT 500A to 10000A 5/10 www.dynexsemi.com DCR1595SW 2000 6000 1800 5000 1600 1400 3000 Conduction angle 180˚ 120˚ 90˚ 60˚ 30˚ 15˚ 2000 1000 Power loss - (W) Power loss - (W) 4000 500 800 Conduction angle 180˚ 120˚ 400 90˚ 60˚ 200 30˚ 15˚ 0 0 3000 1000 1500 2000 2500 Mean on-state current, IT(AV) - (A) 1000 600 0 0 1200 Fig.4 Sine wave power dissipation 200 400 600 800 1000 Mean on-state current, IT(AV) - (A) 1200 1400 Fig.5 Sine wave power dissipation 2000 6000 1800 5000 1600 1400 3000 Conduction angle D.C. 2000 180˚ 120˚ 1000 Power loss - (W) Power loss - (W) 4000 1200 1000 800 Conduction angle D.C. 600 180˚ 120˚ 400 90˚ 90˚ 60˚ 30˚ 200 60˚ 30˚ 0 0 0 500 1000 1500 2000 2500 3000 Mean on-state current, IT(AV) - (A) Fig.6 Square wave power dissipation 3500 4000 0 200 400 600 800 1000 1200 1400 Mean on-state current, IT(AV) - (A) 1600 Fig.7 Square wave power dissipation 6/10 www.dynexsemi.com DCR1595SW 10 Upper limit Lower limit Table gives pulse power PGM in Watts 9 Pulse Width µs 100 200 500 1ms 10ms Gate trigger voltage, VGT - (V) 8 7 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 6 Tj = -40˚C 5 Preferred gate drive area Tj = 25˚C 4 3 Tj = 125˚C 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 7 8 9 1 Fig.8 Gate characteristics 30 Upper limit Lower limit 5W 10W 20W 50W 100W 150W Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) 10 Fig.9 Gate characteristics 7/10 www.dynexsemi.com DCR1595SW 100 10.0 10000 Total stored charge QS - (µC) Max Min 1000 IT QS 8.0 80 7.0 60 6.0 I2t 5.0 4.0 40 3.0 I2t value for fusing - (A2s x 106) Peak half sinewave on-state current - (kA) 9.0 Conditions: VR = 50V IT = 3000A Tj = 125˚C 2.0 20 1.0 dI/dt 0 IRR 100 0.1 1.0 Rate of decay of on-state current dI/dt - (A/µs) 1 10 5 10 1 ms 10 0 50 Cycles at 50Hz Duration Fig.10 Stored charge Fig.11 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 0.1 Anode side cooled Thermal impedance - ˚C/W 0.01 Double side cooled 0.001 Conduction Effective thermal resistance Junction to case - ˚C/W Double sided Single sided d.c. 0.0080 0.0160 half wave 0.0088 0.0168 3 phase 120˚ 0.0090 0.0170 6 phase 60˚ 0.0100 0.0180 0.0001 0.00001 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.12 Maximum (limit) transient thermal impedance junction to case (˚C/W) 8/10 www.dynexsemi.com DCR1595SW PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6x2.0 deep (in both electrodes) Cathode tab Cathode 27.7 26.0 Ø120 max Ø84.6 nom Gate Ø84.6 nom Anode Ø120 max Nominal weight: 2600g Clamping force: 70kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: W 9/10 www.dynexsemi.com DCR1595SW POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4248-6 Issue No. 6.1 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com