OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • • • • • Two Isolated MOSFETs In A Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM6214SS OM6215SS OM6216SS OM6217SS VDS 100V 200V 400V 500V SCHEMATIC RDS(ON) .065 .095 .3 .4 ID(MAX) 30A 25A 15A 13A CONNECTION DIAGRAM FET#1 D 4 11 R4 Supersedes 1 07 R3 3.1 - 109 S FET#2 G G S D 3.1 TC = 25° unless otherwise noted STATIC P/N OM6214SS (Per FET) (100 Volt) ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM6215SS (Per FET) (200 Volt) Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 100 BVDSS Drain-Source Breakdown 200 V Voltage VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage ±100 nA IDSS Zero Gate Voltage Drain 0.1 0.25 mA Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 m Voltage VDS = VGS, ID = 250 mA ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 VGS = ±20 V IGSSF Gate-Body Leakage ±100 nA VGS = ±20 V VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C On-State Drain Current1 30 VDS(on) Static Drain-Source On-State 1.1 1.3 TC = 125° C VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 20 A VDS(on) Static Drain-Source On-State VGS = 10 V, ID = 20 A RDS(on) Static Drain-Source On-State Voltage1 .055 .065 Resistance1 1.36 1.52 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 16 A .085 .095 VGS = 10 V, ID = 16 A 0.14 0.17 VGS = 10 V, ID = 16 A, Resistance1 RDS(on) Static Drain-Source On-State .09 0.11 VGS = 10 V, ID = 20 A, Resistance1 RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C TC = 125 C DYNAMIC gfs Forward Transductance1 gfs Ciss Input Capacitance 2700 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 2400 Coss Output Capacitance 1300 pF VGS = 0 pF VDS = 25 V Coss Output Capacitance 600 pF Crss Reverse Transfer Capacitance VDS = 25 V 470 pF f = 1 MHz Crss Reverse Transfer Capacitance 250 pF td(on) Turn-On Delay Time f = 1 MHz 28 ns VDD = 30 V, ID @ 20 A td(on) Turn-On Delay Time 25 ns VDD = 75 V, ID @ 16 A tr td(off) Rise Time 45 ns Rg = 5.0 W , VG = 10V tr Rise Time 60 ns Rg = 5.0 W ,VGS = 10V Turn-Off Delay Time 100 ns td(off) Turn-Off Delay Time 85 ns Fall Time 50 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 38 ns (MOSFET) switching times are essentially independent of operating temperature. tf 9.0 10 S(W ) VDS 2 VDS(on), ID = 20 A (W ) 3.1 - 110 DYNAMIC BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current A - 140 A the integral P-N - 2.5 V TC = 25 C, IS = -40 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time (Body Diode) VSD Diode Forward Voltage1 trr Reverse Recovery Time Modified MOSPOWER IS G Junction rectifier. 400 Continuous Source Current ISM A - 100 A the integral P-N -2 V TC = 25 C, IS = -30 A, VGS = 0 (Body Diode) S 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. D - 25 Modified MOSPOWER symbol showing Source Current1 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. S(W ) VDS 2 VDS(on), ID = 16 A (Body Diode) symbol showing Source Current1 8.0 12.5 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS D - 30 (Body Diode) ISM 25 Voltage1 RDS(on) Static Drain-Source On-State IS On-State Drain Current1 A (W ) ID(on) G Junction rectifier. 350 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S OM6214SS - OM6217SS 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM6216SS (Per FET) (400 Volt) TC = 25° unless otherwise noted STATIC P/N OM6217SS (Per FET) (500 Volt) Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 400 BVDSS Drain-Source Breakdown 500 V Voltage VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage ±100 nA IDSS Zero Gate Voltage Drain 0.1 0.25 mA Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage VDS = VGS, ID = 250 mA ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 VGS = ±20 V IGSSF Gate-Body Leakage ±100 nA VGS = ±20 V VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.1 0.25 mA VDS = Max. Rat., VGS = 0 Current 0.2 1.0 mA VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C On-State Drain Current1 15 VDS(on) Static Drain-Source On-State 2.0 2.4 TC = 125° C On-State Drain Current1 A VDS 2 VDS(on), VGS = 10 V ID(on) V VGS = 10 V, ID = 8 A VDS(on) Static Drain-Source On-State Voltage1 13 A VDS 2 VDS(on), VGS = 10 V V VGS = 10 V, ID = 7 A 2.1 2.8 0.3 0.4 VGS = 10 V, ID = 7 A 0.66 0.88 VGS = 10 V, ID = 7 A, Voltage1 RDS(on) Static Drain-Source On-State 0.25 0.3 VGS = 10 V, ID = 8 A RDS(on) Static Drain-Source On-State Resistance1 Resistance1 RDS(on) Static Drain-Source On-State 0.50 0.60 VGS = 10 V, ID = 8 A, Resistance1 RDS(on) Static Drain-Source On-State Resistance1 TC = 125 C DYNAMIC gfs Forward Transductance1 gfs Ciss Input Capacitance 2900 pF Forward Transductance1 VGS = 0 Ciss Input Capacitance 2600 Coss Output Capacitance 450 pF VGS = 0 pF VDS = 25 V Coss Output Capacitance 280 pF Crss Reverse Transfer Capacitance VDS = 25 V 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF td(on) f = 1 MHz Turn-On Delay Time 30 ns VDD = 200 V, ID @ 8.0 A td(on) Turn-On Delay Time 30 ns VDD = 210 V, ID @ 7.0 A 8.0 (W ) 3.1 - 111 DYNAMIC TC = 125 C 9.6 S(W ) VDS 2 VDS(on), ID = 58A 6.0 (W ) ID(on) 7.2 S(W ) VDS 2 VDS(on), ID = 7 A tr Rise Time 40 ns Rg =5.0 W , VGS =10V tr Rise Time 46 ns Rg = 5.0 W , VGS = 10 V td(off) Turn-Off Delay Time 80 ns td(off) Turn-Off Delay Time 75 ns tf Fall Time 30 ns (MOSFET) switching times are essentially independent of operating temperature. tf Fall Time 31 ns (MOSFET) switching times are essentially independent of operating temperature. BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current - 60 A the integral P-N - 1.6 V TC = 25 C, IS = -15 A, VGS = 0 VSD Diode Forward Voltage1 ns TJ = 150 C,IF = IS, trr Reverse Recovery Time (Body Diode) Diode Forward Voltage1 trr Reverse Recovery Time IS G Junction rectifier. 400 Continuous Source Current ISM - 52 A the integral P-N - 1.4 V TC = 25 C, IS = -13 A, VGS = 0 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. Modified MOSPOWER symbol showing Source Current1 dlF/ds = 100 A/ms 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. A (Body Diode) S D - 13 (Body Diode) symbol showing Source Current1 VSD Modified MOSPOWER G Junction rectifier. 400 ns TJ = 150 C,IF = IS, dlF/ds = 100 A/ms S 3.1 OM6214SS - OM6217SS A (Body Diode) ISM BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS D - 15 OM6214SS - OM6217SS ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6214SS OM6215SS OM6216SS OM6217SS Units VDS Drain-Source Voltage 100 VDGR Drain-Gate Voltage (RGS = 1 M ) 100 200 ID @ TC = 25°C Continuous Drain Current ± 30 ± 25 ID @ TC = 100°C Continuous Drain Current ± 20 ± 16 IDM Pulsed Drain Current ± 140 1 200 400 500 V 400 500 V ± 15 ± 13 A ±9 ±8 A ± 100 ± 60 ± 52 A PD @ TC = 25°C Maximum Power Dissipation 125 125 125 125 W PD @ TC = 100°C Maximum Power Dissipation 50 50 50 50 W Junction To Case Linear Derating Factor1 1.0 1.0 1.0 1.0 W/°C .025 .025 .025 .025 W/°C Junction To Ambient Linear Derating Factor TJ Operating and Tstg Storage Temperature Range -55 to 150 Lead Temperature (1/16" from case for 10 secs.) 300 300 -55 to 150 -55 to 150 -55 to 150 300 °C 300 °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. THERMAL RESISTANCE (Per FET at TA = 25°C) RthJC Junction-to-Case 1.0 °C/W RthJA Junction-to-Ambient 40 °C/W 3.1 PD - POWER DISSIPATION (WATTS) POWER DERATING (Per Device) Free Air Operation MECHANICAL OUTLINE 180 1.375 150 .770 RqJC = 1.0°C/W 120 .118 .265 .150 DIA. THRU 2 PLACES 90 .040 .302 .752 REF. .487 60 .500 MIN. 30 0 .200 TYP. 0 25 50 75 100 125 150 175 TC - CASE TEMPERATURE ( °C) 1.000 .060 DIA.TYP. 6 PLACES 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 .188 REF. .140 TYP. .270 MAX.