ETC OM6216SS Two power mosfets in hermetic isolated sip package Datasheet

OM6214SS OM6216SS
OM6215SS OM6217SS
TWO POWER MOSFETS IN HERMETIC
ISOLATED SIP PACKAGE
100V Thru 500V, Dual High Current,
N-Channel MOSFETs
FEATURES
•
•
•
•
•
Two Isolated MOSFETs In A Hermetic Metal Package
Fast Switching, Low Drive Current
Ease of Paralleling For Added Power
Low RDS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM6214SS
OM6215SS
OM6216SS
OM6217SS
VDS
100V
200V
400V
500V
SCHEMATIC
RDS(ON)
.065
.095
.3
.4
ID(MAX)
30A
25A
15A
13A
CONNECTION DIAGRAM
FET#1
D
4 11 R4
Supersedes 1 07 R3
3.1 - 109
S
FET#2
G
G
S
D
3.1
TC = 25° unless otherwise noted
STATIC P/N OM6214SS (Per FET) (100 Volt)
ELECTRICAL CHARACTERISTICS:
TC = 25° unless otherwise noted
STATIC P/N OM6215SS (Per FET) (200 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
100
BVDSS Drain-Source Breakdown
200
V
Voltage
VGS = 0,
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
IGSSF
Gate-Body Leakage
±100
nA
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
2.0
4.0
V
V
VGS = 0,
V
VDS = VGS, ID = 250 m
Voltage
VDS = VGS, ID = 250 mA
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
2.0
4.0
VGS = ±20 V
IGSSF
Gate-Body Leakage
±100
nA
VGS = ±20 V
VDS = Max. Rat., VGS = 0
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
On-State Drain Current1
30
VDS(on) Static Drain-Source On-State
1.1
1.3
TC = 125° C
VDS 2 VDS(on), VGS = 10 V
ID(on)
V
VGS = 10 V, ID = 20 A
VDS(on) Static Drain-Source On-State
VGS = 10 V, ID = 20 A
RDS(on) Static Drain-Source On-State
Voltage1
.055 .065
Resistance1
1.36 1.52
A
VDS 2 VDS(on), VGS = 10 V
V
VGS = 10 V, ID = 16 A
.085 .095
VGS = 10 V, ID = 16 A
0.14 0.17
VGS = 10 V, ID = 16 A,
Resistance1
RDS(on) Static Drain-Source On-State
.09
0.11
VGS = 10 V, ID = 20 A,
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
TC = 125 C
TC = 125 C
DYNAMIC
gfs
Forward Transductance1
gfs
Ciss
Input Capacitance
2700
pF
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
2400
Coss
Output Capacitance
1300
pF
VGS = 0
pF
VDS = 25 V
Coss
Output Capacitance
600
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V
470
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
250
pF
td(on)
Turn-On Delay Time
f = 1 MHz
28
ns
VDD = 30 V, ID @ 20 A
td(on)
Turn-On Delay Time
25
ns
VDD = 75 V, ID @ 16 A
tr
td(off)
Rise Time
45
ns
Rg = 5.0 W , VG = 10V
tr
Rise Time
60
ns
Rg = 5.0 W ,VGS = 10V
Turn-Off Delay Time
100
ns
td(off)
Turn-Off Delay Time
85
ns
Fall Time
50
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
tf
Fall Time
38
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
tf
9.0
10
S(W ) VDS 2 VDS(on), ID = 20 A
(W )
3.1 - 110
DYNAMIC
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current
A
- 140
A
the integral P-N
- 2.5
V
TC = 25 C, IS = -40 A, VGS = 0
VSD
Diode Forward Voltage1
ns
TJ = 150 C,IF = IS,
trr
Reverse Recovery Time
(Body Diode)
VSD
Diode Forward Voltage1
trr
Reverse Recovery Time
Modified MOSPOWER
IS
G
Junction rectifier.
400
Continuous Source Current
ISM
A
- 100
A
the integral P-N
-2
V
TC = 25 C, IS = -30 A, VGS = 0
(Body Diode)
S
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
D
- 25
Modified MOSPOWER
symbol showing
Source Current1
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
S(W ) VDS 2 VDS(on), ID = 16 A
(Body Diode)
symbol showing
Source Current1
8.0 12.5
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
- 30
(Body Diode)
ISM
25
Voltage1
RDS(on) Static Drain-Source On-State
IS
On-State Drain Current1
A
(W )
ID(on)
G
Junction rectifier.
350
ns
TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
S
OM6214SS - OM6217SS
3.1
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
ELECTRICAL CHARACTERISTICS:
TC = 25° unless otherwise noted
STATIC P/N OM6216SS (Per FET) (400 Volt)
TC = 25° unless otherwise noted
STATIC P/N OM6217SS (Per FET) (500 Volt)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
400
BVDSS Drain-Source Breakdown
500
V
Voltage
VGS = 0,
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
IGSSF
Gate-Body Leakage
±100
nA
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
2.0
4.0
V
V
VGS = 0,
V
VDS = VGS, ID = 250 mA
Voltage
VDS = VGS, ID = 250 mA
ID = 250 mA
VGS(th)
Gate-Threshold Voltage
2.0
4.0
VGS = ±20 V
IGSSF
Gate-Body Leakage
±100
nA
VGS = ±20 V
VDS = Max. Rat., VGS = 0
IDSS
Zero Gate Voltage Drain
0.1
0.25
mA
VDS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
On-State Drain Current1
15
VDS(on) Static Drain-Source On-State
2.0
2.4
TC = 125° C
On-State Drain Current1
A
VDS 2 VDS(on), VGS = 10 V
ID(on)
V
VGS = 10 V, ID = 8 A
VDS(on) Static Drain-Source On-State
Voltage1
13
A
VDS 2 VDS(on), VGS = 10 V
V
VGS = 10 V, ID = 7 A
2.1
2.8
0.3
0.4
VGS = 10 V, ID = 7 A
0.66 0.88
VGS = 10 V, ID = 7 A,
Voltage1
RDS(on) Static Drain-Source On-State
0.25
0.3
VGS = 10 V, ID = 8 A
RDS(on) Static Drain-Source On-State
Resistance1
Resistance1
RDS(on) Static Drain-Source On-State
0.50 0.60
VGS = 10 V, ID = 8 A,
Resistance1
RDS(on) Static Drain-Source On-State
Resistance1
TC = 125 C
DYNAMIC
gfs
Forward Transductance1
gfs
Ciss
Input Capacitance
2900
pF
Forward Transductance1
VGS = 0
Ciss
Input Capacitance
2600
Coss
Output Capacitance
450
pF
VGS = 0
pF
VDS = 25 V
Coss
Output Capacitance
280
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V
150
pF
f = 1 MHz
Crss
Reverse Transfer Capacitance
40
pF
td(on)
f = 1 MHz
Turn-On Delay Time
30
ns
VDD = 200 V, ID @ 8.0 A
td(on)
Turn-On Delay Time
30
ns
VDD = 210 V, ID @ 7.0 A
8.0
(W )
3.1 - 111
DYNAMIC
TC = 125 C
9.6
S(W ) VDS 2 VDS(on), ID = 58A
6.0
(W )
ID(on)
7.2
S(W ) VDS 2 VDS(on), ID = 7 A
tr
Rise Time
40
ns
Rg =5.0 W , VGS =10V
tr
Rise Time
46
ns
Rg = 5.0 W , VGS = 10 V
td(off)
Turn-Off Delay Time
80
ns
td(off)
Turn-Off Delay Time
75
ns
tf
Fall Time
30
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
tf
Fall Time
31
ns
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Continuous Source Current
- 60
A
the integral P-N
- 1.6
V
TC = 25 C, IS = -15 A, VGS = 0
VSD
Diode Forward Voltage1
ns
TJ = 150 C,IF = IS,
trr
Reverse Recovery Time
(Body Diode)
Diode Forward Voltage1
trr
Reverse Recovery Time
IS
G
Junction rectifier.
400
Continuous Source Current
ISM
- 52
A
the integral P-N
- 1.4
V
TC = 25 C, IS = -13 A, VGS = 0
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
Modified MOSPOWER
symbol showing
Source Current1
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
A
(Body Diode)
S
D
- 13
(Body Diode)
symbol showing
Source Current1
VSD
Modified MOSPOWER
G
Junction rectifier.
400
ns
TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
S
3.1
OM6214SS - OM6217SS
A
(Body Diode)
ISM
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
D
- 15
OM6214SS - OM6217SS
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
OM6214SS OM6215SS OM6216SS OM6217SS Units
VDS
Drain-Source Voltage
100
VDGR
Drain-Gate Voltage (RGS = 1 M )
100
200
ID @ TC = 25°C
Continuous Drain Current
± 30
± 25
ID @ TC = 100°C
Continuous Drain Current
± 20
± 16
IDM
Pulsed Drain Current
± 140
1
200
400
500
V
400
500
V
± 15
± 13
A
±9
±8
A
± 100
± 60
± 52
A
PD @ TC = 25°C
Maximum Power Dissipation
125
125
125
125
W
PD @ TC = 100°C
Maximum Power Dissipation
50
50
50
50
W
Junction To Case
Linear Derating Factor1
1.0
1.0
1.0
1.0
W/°C
.025
.025
.025
.025
W/°C
Junction To Ambient Linear Derating Factor
TJ
Operating and
Tstg
Storage Temperature Range
-55 to 150
Lead Temperature
(1/16" from case for 10 secs.)
300
300
-55 to 150 -55 to 150 -55 to 150
300
°C
300
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%.
THERMAL RESISTANCE (Per FET at TA = 25°C)
RthJC
Junction-to-Case
1.0
°C/W
RthJA
Junction-to-Ambient
40
°C/W
3.1
PD - POWER DISSIPATION (WATTS)
POWER DERATING (Per Device)
Free Air Operation
MECHANICAL OUTLINE
180
1.375
150
.770
RqJC = 1.0°C/W
120
.118
.265
.150 DIA.
THRU 2
PLACES
90
.040
.302
.752
REF.
.487
60
.500
MIN.
30
0
.200 TYP.
0
25
50
75
100 125 150 175
TC - CASE TEMPERATURE ( °C)
1.000
.060 DIA.TYP.
6 PLACES
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
.188
REF.
.140 TYP.
.270
MAX.
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