FR301G THRU FR307G HD ZC84 DO-27 Plastic-Encapsulate Diodes Fast Recovery Rectifier Features ●Io 3.0A DO-2 7 ●VRRM 50V-1000V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● FR30XG X:From 1 to 7 FR30 Item Symbol Unit VRRM Maximum RMS Voltage Conditions 1G 2G 3G 4G 5G 6G 7G V 50 100 200 400 600 800 1000 VRMS V 35 70 140 280 420 560 700 Average Forward Current IF(AV) A 60Hz Half-sine wave, Resistance load, Ta=75℃ 3.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Repetitive Peak Reverse Voltage Junction Temperature Storage Temperature Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Peak Forward Voltage Peak Reverse Current Reverse Recovery time Symbol Unit VFM V IRRM1 IRRM2 trr Thermal Resistance(Typical) R¦ÈJ-A Typical junction capacitance Cj ¦ÌA ns pF Test Condition FR30 1G 2G 3G IFM=3.0A 4G 6G 7G 1.3 Ta=25 2.5 Ta=125 IF=0.5A IR=1A IRR=0.25A 100 VRM=VRRM 5G 150 250 Between junction and ambient 30 Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 55 High Diode Semiconductor 500 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 IFSM(A) IO(A） FIG.1 : FORWARD CURRENT DERATING CURVE ３． ０ 170 ２． ２５ 8.3ms Single Half Sine Wave JEDEC Method 140 110 １． ５ 90 ０． ７５ 60 Ｓingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 30 0 0 0 100 １００ 50 150 Ta（ ℃） 1 2 IR(uA) FIG.3：TYPICAL FORWARD CHARACTERISTICS IF(A) 100 10 20 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS 1000 10 100 4.0 Tj=125℃ 2.0 10 1.0 Tj=100℃ 0.4 1.0 0.2 Tj=25℃ 0.1 TJ=25℃ Pulse width=300us 1% Duty Cycle 0.1 0.02 0.01 0.4 0.01 0 0.6 0.8 1.0 1.2 1.4 1.6 20 40 60 80 100 1.8 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 .052(1.30) .044(1.10) .197(5.00) 0.96(24.5) MIN .220(5.60) 0.96(24.5) MIN .335(8.50) .375(9.50) DO-27 Unit: in inches (millimeters) JSHD JSHD High Diode Semiconductor 3 Ammo Box Packaging Specifications For Axial Lead Rectifiers High Diode Semiconductor 4