FQB4N90 / FQI4N90 N-Channel QFET MOSFET 900 V, 4.2 A, 3.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max) @VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 24 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D D ! " ! " " " G! G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS ID I2-PAK ! FQI Series S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB4N90 / FQI4N90 900 Units V 4.2 A - Continuous (TC = 100°C) 2.65 A 16.8 A IDM Drain Current VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 570 mJ IAR Avalanche Current (Note 1) 4.2 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 14 4.0 3.13 mJ V W 140 1.12 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, Tstg TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.89 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 900 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.9 IDSS IGSSF IGSSR VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 2.7 3.3 Ω -- 3.5 -- S -- 860 1100 pF -- 90 120 pF -- 9.5 12.5 pF -- 25 60 ns -- 70 150 ns -- 45 100 ns -- 40 90 ns -- 24 30 nC Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.1 A gFS Forward Transconductance VDS = 50 V, ID = 2.1 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 4.2 A, RG = 25 Ω (Note 4, 5) VDS = 720 V, ID = 4.2 A, VGS = 10 V (Note 4, 5) -- 5.8 -- nC -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.2 A ISM -- -- 16.8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.2 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 440 -- ns Qrr Reverse Recovery Charge -- 3.3 -- µC VGS = 0 V, IS = 4.2 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 61mH, IAS = 4.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Electrical Characteristics ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 10 ID , Drain Current [A] 1 10 0 10 150℃ 0 10 25℃ -55℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 8 IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 10 VGS = 10V VGS = 20V 6 4 2 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0 -1 0 3 6 12 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 180V 10 Ciss VDS = 450V 900 Coss 600 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 300 VGS, Gate-Source Voltage [V] 1200 Capacitance [pF] 9 VDS = 720V 8 6 4 2 ※ Note : ID = 4.2 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 0 5 10 15 20 25 30 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.1 A 0.5 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2 5 10 Operation in This Area is Limited by R DS(on) 4 1 100 µs 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms DC 0 10 -1 10 ※ Notes : 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N o te s : 1 . Z θ J C ( t) = 0 .8 9 ℃ / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 10 -1 0 .1 0 .0 5 PDM 0 .0 2 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] 0 .0 1 t1 Z θ s i n g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Typical Characteristics FQB4N90 / FQI4N90 N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 12V Qg 10V 200nF 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG ID (t) 10V DUT VDS (t) VDD tp ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 Time www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Mechanical Dimensions D2 - PAK Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET Mechanical Dimensions I2 - PAK Dimensions in Millimeters ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FQB4N90 / FQI4N90 Rev. C0 www.fairchildsemi.com FQB4N90 / FQI4N90 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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