APTGF100A120T3AG Phase leg NPT IGBT Power Module Power Module 29 30 31 32 VCES = 1200V IC = 100A @ Tc = 100°C Application 13 • • • • 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27 28 22 23 25 R1 • 8 7 16 28 27 26 25 18 19 20 14 • • • • • 20 19 18 23 22 29 16 30 15 31 14 32 Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 13 2 3 4 7 8 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together • • • • • Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C Continuous Collector Current TC = 100°C Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 25°C TJ = 150°C Max ratings 1200 130 100 200 ±20 780 200A @ 1150V Unit V May, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGF100A120T3AG – Rev 0 Symbol VCES APTGF100A120T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Typ 4.5 3.2 3.9 5.5 Min Typ Max Unit 250 3.7 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 100A Tj = 125°C RG = 5.6Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 6.5 1 0.5 nF 1.1 µC 120 50 310 20 ns 130 60 360 ns 30 12 mJ 5 650 A Reverse diode ratings and characteristics IRM IF VF Test Conditions Min Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IF = 60A VR = 800V di/dt =400A/µs www.microsemi.com V Tj = 25°C Tj = 125°C 150 600 Tj = 125°C 60 2.6 3.2 1.8 Tj = 25°C 300 Tj = 125°C Tj = 25°C 380 720 Tj = 125°C 3400 Tc = 100°C IF = 60A IF = 120A IF = 60A Unit µA A 3.1 V May, 2009 VRRM ns nC 2–5 APTGF100A120T3AG – Rev 0 Symbol Characteristic APTGF100A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 Max 0.16 0.50 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGF100A120T3AG – Rev 0 May, 2009 28 17 1 APTGF100A120T3AG Typical Performance Curve Output Characteristics (VGE=15V) 200 175 175 TJ=25°C 150 125 100 VGE=20V VGE=12V 100 75 50 VGE=9V 50 TJ=125°C 25 25 0 0 0 1 2 3 VCE (V) 4 5 6 0 35 175 2 3 4 VCE (V) VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C 30 150 25 E (mJ) 125 TJ=125°C 100 1 5 6 Energy losses vs Collector Current Transfert Characteristics 200 75 Eon 20 15 10 50 TJ=25°C Eoff 5 25 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 40 250 VCE = 600V VGE =15V IC = 100A TJ = 125°C 30 25 200 Eon IC (A) 35 E (mJ) VGE=15V 125 75 IC (A) TJ = 125°C 150 IC (A) IC (A) Output Characteristics 200 20 150 100 15 VGE=15V TJ=125°C RG=5.6 Ω Eoff 10 50 5 0 0 0 10 20 30 40 Gate Resistance (ohms) 0 50 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.12 0.7 0.08 0.04 May, 2009 IGBT 0.16 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGF100A120T3AG – Rev 0 Thermal Impedance (°C/W) 0.2 APTGF100A120T3AG Forward Characteristic of diode 125 VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C 150 ZVS 120 90 100 TJ=125°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 ZCS 60 30 0 40 50 TJ=25°C 25 hard switching 20 75 0 60 80 100 120 0 140 0.5 IC (A) 1 1.5 2 VF (V) 2.5 3 3.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 Diode 0.5 0.9 0.4 0.7 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGF100A120T3AG – Rev 0 May, 2009 rectangular Pulse Duration (Seconds)