Rohm BR25S256NUX-WE2 Spi bus eeprom Datasheet

Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25Sxxx-W Series
(32K 64K 128K 256K)
●General Description
BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method
●Features
„ High speed clock action up to 20MHz (Max.)
„ Wait function by HOLDB terminal
„ Part or whole of memory arrays settable as read only
memory area by program
„ 1.7V to 5.5V single power source action most suitable
for battery use
„ Page write mode useful for initial value write at
factory shipment
„ Highly reliable connection by Au pad and Au wire
„ For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
„ Auto erase and auto end function at data rewrite
„ Low current consumption
¾
At write action (5V)
: 1.5mA (Typ.)
¾
At read action (5V)
: 1.0mA (Typ.)
¾
At standby action (5V) : 0.1μA (Typ.)
„ Address auto increment function at read action
„ Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code (WRDI)
¾ Write prohibition by WP pin
¾ Write prohibition block setting by status registers
(BP1, BP0)
¾ Write mistake prevention function at low voltage
„ Data kept for 40 years
„ Data rewrite up to 1,000,000 times
„ Data at shipment
Memory array: FFh
Status register: WPEN, BP1, BP0 : 0
●Page write
Page
Part Number
●Packages W(Typ.) x D(Typ.) x H(Max.)
SOP8
TSSOP-B8
5.00mm x 6.20mm x 1.71mm
3.00mm x 6.40mm x 1.20mm
SOP- J8
TSSOP-B8J
4.90mm x 6.00mm x 1.65mm
3.00mm x 4.90mm x 1.10mm
SSOP-B8
MSOP8
3.00mm x 6.40mm x 1.35mm
2.90mm x 4.00mm x 0.90mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
32Byte
64Byte
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
●BR25Sxxx-W Series
Capacity Bit format
32Kbit
4K×8
Power source
voltage
SOP8
SOP-J8
1.7V to 5.5V
●
●
SSOP-B8 TSSOP-B8 MSOP8
●
●
●
●
●
●
64Kbit
8K×8
1.7V to 5.5V
●
●
●
●
16K×8
1.7V to 5.5V
●
●
●
●
256Kbit
32K×8
1.7V to 5.5V
●
●
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©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
VSON008
X2030
●
128Kbit
○Product structure：Silicon monolithic integrated circuit
TSSOP-B8J
○This product is not designed protection against radioactive rays
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Supply Voltage
VCC
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
Power Dissipation
Pd
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
Storage Temperature
Tstg
－65 to +125
Operating Temperature
Topr
－40 to +85
Terminal Voltage
‐
-0.3 to Vcc+0.3
Unit
V
mW
Remarks
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
When using at Ta=25℃
or higher 4.5mW to be reduced per 1℃.
or higher 4.5mW to be reduced per 1℃.
or higher 3.0mW to be reduced per 1℃.
or higher 3.3mW to be reduced per 1℃.
or higher 3.1mW to be reduced per 1℃.
or higher 3.1mW to be reduced per 1℃.
or higher 3.0mW to be reduced per 1℃.
℃
℃
V
●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)
Limits
Parameter
Min.
Typ.
Number of data rewrite times *1
1,000,000
Data hold years *1
40
-
Max.
-
Unit
Times
Years
*1 Not 100% TESTED
●Recommended Operating Ratings
Parameter
Symbol
Power source voltage
Vcc
Input voltage
VIN
●Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter
Symbol
Min.
Input capacity *1
CIN
－
Output capacity *1
COUT
－
*1
Unit
Ratings
1.7 to 5.5
0 to Vcc
V
Max.
8
8
Unit
pF
Conditions
VIN=GND
VOUT=GND
Not 100% TESTED.
●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V)
Limits
Parameter
Symbol
Unit
Conditions
Min.
Typ.
Max.
“H” Input Voltage1
VIH1
0.7xVcc
－
Vcc+0.3
V 1.7≦Vcc≦5.5V
“L” Input Voltage1
VIL1
-0.3
－
0.3xVcc
V 1.7≦Vcc≦5.5V
“L” Output Voltage1
VOL1
0
－
0.4
V IOL=2.1mA, 2.5≦Vcc<5.5V
“L” Output Voltage2
VOL2
0
－
0.2
V IOL=1.0mA, 1.7≦Vcc<2.5V
“H” Output Voltage1
VOH1 Vcc-0.2
－
Vcc
V IOH=-0.4mA, 2.5V≦Vcc<5.5V
“H” Output Voltage2
VOH2 Vcc-0.2
－
Vcc
V IOH=-100µA, 1.7≦Vcc<2.5V
Input Leakage Current
ILI
-1
－
1
μA VIN=0 to Vcc
Output Leakage Current
ILO
-1
－
1
μA VOUT=0 to Vcc, CSB=Vcc
0.5 *1
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
ICC1
－
－
*2 mA
Byte Write, Page Write, Write Status register
1
1 *1
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Operating Current Write
ICC2
－
－
*2 mA
Byte Write, Page Write, Write Status register
1.5
2 *1
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
ICC3
－
－
mA
Byte Write, Page Write, Write Status register
3 *2
Vcc=1.8V, fSCK=5MHz, SO=OPEN
ICC4
－
－
1
mA
Read, Read Status Register
Vcc=2.5V, fSCK=2MHz, SO=OPEN
ICC5
－
－
1
mA
Read, Read Status Register
Vcc=2.5V, fSCK=5MHz, SO=OPEN
ICC6
－
－
1.5
mA
Read, Read Status Register
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Operating Current Read
ICC7
－
－
2
mA
Read, Read Status Register
Vcc=5.5V, fSCK=5MHz, SO=OPEN
ICC8
－
－
2
mA
Read, Read Status Register
Vcc=5.5V, fSCK=10MHz, SO=OPEN
ICC9
－
－
4
mA
Read, Read Status Register
Vcc=5.5V, fSCK=20MHz, SO=OPEN
ICC10
－
－
8
mA
Read, Read Status Register
Vcc=5.5V, SO=OPEN
－
－
Standby Current
ISB
2
μA CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND
*1 BR25S320/640-W
*2 BR25S128/256-W
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Operating timing characteristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity CL=30pF)
1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc<4.5V 4.5≦Vcc<5.5V
Symbol
Unit
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
fSCK
3
5
10
20 MHz
SCK frequency
tSCKWH 125
80
40
20
ns
SCK high time
tSCKWL 125
80
40
20
ns
SCK low time
tCS
250
90
40
20
ns
CSB high time
tCSS
100
60
30
15
ns
CSB setup time
t
CSH
100
60
30
15
ns
CSB hold time
tSCKS 100
50
20
15
ns
SCK setup time
tSCKH 100
50
20
15
ns
SCK hold time
tDIS
30
20
10
5
ns
SI setup time
50
20
10
5
ns
tDIH
SI hold time
125
80
40
20
ns
tPD
Data output delay time
tOH
0
0
0
0
ns
Output hold time
tOZ
200
80
40
20
ns
Output disable time
tHFS
100
0
0
0
ns
HOLDB setting setup time
100
20
10
5
ns
tHFH
HOLDB setting hold time
tHRS
100
0
0
0
ns
HOLDB release setup time
tHRH
100
20
10
5
ns
HOLDB release hold time
tHOZ
100
80
40
20
ns
Time from HOLDB to output High-Z
100
80
40
20
ns
tHPD
Time from HOLDB to output change
*1
tRC
1
1
1
1
μs
SCK rise time
*1
tFC
1
1
1
1
μs
SCK fall time
*1
tRO
100
50
40
20
ns
OUTPUT rise time
*1
tFO
100
50
40
20
ns
OUTPUT fall time
Write time
tE/W
5
5
5
5
ms
*1 NOT 100% TESTED
●AC timing characteristics conditions
Parameter
Symbol
Limits
Min.
Typ.
Max.
Unit
Load capacity
CL
-
-
30
pF
Input rise time
-
-
-
50
ns
Input fall time
-
-
-
50
ns
Input voltage
-
0.2Vcc/0.8Vcc
V
Input / Output judgment voltage
-
0.3Vcc/0.7Vcc
V
●Sync data input / output timing
tCS
tCS
tCSS
CSB
tSCKS
tSCKWL
tRC
tSCKWH
tCSH tSCKH
CSB
tFC
SCK
SCK
tDIS tDIH
SI
SI
tPD
tOH
tRO,tFO
tOZ
High-Z
SO
High-Z
SO
Figure 2. Input / Output timing
Figure 1. Input timing
SI is taken into IC inside in sync with data rise edge of
SCK. Input address and data from the most significant bit
MSB
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
"H"
CSB
"L"
tHFS
tHFH
tHRS tHRH
SCK
tDIS
SI
n
n+1
tHOZ
SO
n-1
tHPD
High-Z
Dn+1
Dn
Dn
Dn-1
HOLDB
Figure 3. HOLD timing
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Block Diagram
CSB
1
8 Vcc
VOLTAGE
INSTRUCTION DECODE
DETECTION
CONTROL CLOCK
GENERATION
SO
2
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
7 HOLDB
INSTRUCTION
REGISTER
WP
3
STATUS REGISTER
ADDRESS
12to 15bit *1
REGISTER
ADDRESS
6 SCK
12to 15bit *1
DECODER
32to256K
EEPROM
DATA
GND
REGISTER
4
●Pin Configuration
READ/WRITE
8bit
AMP
8bit
5 SI
*1 12bit: BR25S320-W
13bit: BR25S640-W
14bit: BR25S128-W
15bit: BR25S256-W
(TOP VIEW)
Vcc
HOLDB SCK
SI
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
CSB
SO
WP
GND
●Pin Descriptions
Terminal
name
Input
/Output
Vcc
-
Power source to be connected
GND
-
All input / output reference voltage, 0V
CSB
Input
Chip select input
SCK
Input
Serial clock input
Function
SI
Input
SO
Output
HOLDB
Input
Hold input
Command communications may be suspended
temporarily (HOLD status)
WP
Input
Write protect input
Write command is prohibited
Write status register command is prohibited
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TSZ22111･15･001
Start bit, ope code, address, and serial data input
Serial data output
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves
(The following characteristic data are Typ. Values.)
Figure 4. "H" Input Voltage VIH
Figure 5. "L" Input Voltage VIL
(CSB,SCK,SI,HOLDB,WP)
(CSB,SCK,SI,HOLDB,WP)
Figure 6. "L" Output Voltage VOL1(Vcc=2.5V)
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Figure 7. "H" Output Voltage VOH1
(Vcc=2.5V)
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 9. Output Leak Current ILO (SO)
Figure 8. Input Leak Current ILI
(CSB,SCK,SI,HOLDB,WP)
Figure 10. Current consumption at WRITE operation ICC3
(BR25S320/640-W)
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Figure 11. Current consumption at WRITE operation ICC3
(BR25S128/256-W)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 12. Current consumption at READ operation ICC10
Figure 13. Current consumption at standby operation ISB
Figure 14. SCK frequency fSCK
Figure 15. SCK high time tSCKWH
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 16. SCK low time tSCKWL
Figure 17. CSB high time tCS
Figure 19. CSB hold time tCSH
Figure 18. CSB setup time tCSS
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 20. SI setup time tDIS
Figure 21. SI hold time tDIH
Figure 22. Data output delay time tPD
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Figure 23. Output disable time tOZ
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 24. HOLDB setting hold time tHFH
Figure 25. HOLDB release hold time tHRH
Figure 26. Time from HOLDB to output High-Z tHOZ
Figure 27. Time from HOLDB to output change tHPD
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TSZ02201-0R2R0G100330-1-2
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Typical Performance Curves‐Continued
Figure 28. Output rise time tRO
Figure 29. Output fall time tFO
Figure 30. Write cycle time tE/W
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Features
○Status registers
This IC has status register. The status register expresses the following parameters of 8 bits.
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are
valid even when power source is turned off.
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.
WEN can be set by write enable command and write disable command. WEN becomes write disable status when power
source is turned off. R/B is for write confirmation, therefore cannot be set externally.
The value of status register can be read by read status register command.
1. Contexture of status register
Product number
bit 7
bit 6
bit 5
bit 4
bit 3
bit 2
bit 1
bit 0
0
0
0
BP1
BP0
WEN
R/B
BR25S320-W
BR25S640-W
―
WPEN
BR25S128-W
BR25S256-W
bit
Memory
location
WPEN
EEPROM
BP1
BP0
EEPROM
WEN
registers
Function
WP pin enable / disable designation bit
WPEN=0=invalid
WPEN=1=valid
EEPROM write disable block designation bit
Write and write status register write enable / disable status confirmation bit
WEN=0=prohibited
WEN=1=permitted
Write cycle status (READY / BUSY) status confirmation bit
―
―
R/B
R/B=0=READY
registers
―
R/B=1=BUSY
2. Write disable block setting
Write disable block
BP1
BP0
0
0
None
None
None
None
0
1
C00h-FFFh
1800h-1FFFh
3000h-3FFFh
6000h-7FFFh
1
0
800h-FFFh
1000h-1FFFh
2000h-3FFFh
4000h-7FFFh
1
1
000h-FFFh
0000h-1FFFh
0000h-3FFFh
0000h-7FFFh
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
○WP pin
By setting WP=LOW, write command is prohibited. And the write command to be disabled at this moment is WRSR.
However, when write cycle is in execution, no interruption can be made.
Product number
WRSR
WRITE
BR25S320-W
BR25S640-W
BR25S128-W
Prohibition possible
but WPEN bit “1”
Prohibition
impossible
BR25S256-W
○HOLDB pin
By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to
EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.
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TSZ02201-0R2R0G100330-1-2
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Command mode
Command
Contents
WREN
WRDI
READ
WRITE
RDSR
WRSR
Ope code
Write enable command
Write disable command
Read command
Write command
Read status register command
Write status register command
0000
0000
0000
0000
0000
0000
0110
0100
0011
0010
0101
0001
●Timing chart
1. Write enable (WREN) / disable (WRDI) command
WREN (WRITE ENABLE): Write enable
WRDI (WRITE DISABLE): Write disable
CSB
CSB
SCK
0
SI
SO
1
0
2
0
3
0
4
0
5
0
1
6
7
1
SCK
0
1
2
3
5
4
6
7
0
SI
0
0
0
0
0
1
0
0
High-Z
High-Z
SO
Figure 31. Write enable command
Figure 32. Write disable command
This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is
set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the
respective ope codes. The respective commands are accepted at the 7-th clock rise. Even with input over 7 clocks,
command becomes valid.
When to carry out write command, it is necessary to set write enable status by the write enable command. If write
command is input in the write disable status, the command is cancelled. And even in the write enable status, once write
command is executed, it gets in the write disable status. After power on, this IC is in write disable status.
2. Read command (READ)
～
～
～
～
CSB
～
～
0
1
2
3
4
5
6
7
8
9
10
11
23
～
～
SCK
24
30
31
～
～
0
0
0
0
0
1
1
*
A14 A13 A12
A1
～
～
0
～
～
SI
A0
～
～
High-Z
D7
D6
～
～
～
～
SO
D2
D1
Product
number
BR25S320-W
Address
length
A11-A0
BR25S640-W
A12-A0
BR25S128-W
A13-A0
BR25S256-W
A14-A0
D0
Figure 33. Read command
By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 23-th clock, and
from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input
of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data
of the most significant address, by continuing increment read, data of the most insignificant address is read.
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TSZ02201-0R2R0G100330-1-2
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
3. Write command (WRITE)
0
2
0
3
0
4
0
5
6
0
7
8
0
1
A14
*
11
A12
10
9
A13
23
A1
24
A0
D7
30
～ ～
～
～
D6
D2
D1
31
High-Z
Product
number
BR25S320-W
Address
length
A11-A0
BR25S640-W
A12-A0
BR25S128-W
A13-A0
BR25S256-W
A14-A0
D0
～
～
SO
0
1
～ ～
～
～
SI
0
～
～
SCK
～ ～
～
～
～
～
CSB
＊=Don't Care
Figure 34. Write command
By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data
after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time
of tE/W (Max 5ms). During tE/W, other than read status register command is not accepted. Set CSB HIGH between
taking the last data (D0) and rising the next SCK clock. At the other timing, write command is not executed, and this write
command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input
without setting CSB HIGH, 2byte or more data can be written for one tE/W. The maximum number of write bytes is
specified per device of each capacity. Up to 64 arbitrary bytes can be written (in the case of BR25S128/256-W). In page
write, the insignificant 5 bit of the designated address is incremented internally at every time when data of 1 byte is input
and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and
previously input data is overwritten.
4. Write status register, Read status register command (WRSR/RDSR)
CSB
SCK
SI
SO
0
0
1
0
2
3
0
0
4
0
5
0
6
0
7
1
8
9
10
bit7
bit6
bit5
WPEN
*
*
11
12
bit4
13
bit3
bit2
BP1 BP0
*
14
15
bit1
bit0
*
*
High-Z
*=Don't care
Figure 35. Write status register
Write status register command can write data of status register. The data can be written by this command are 3 bits, that
is, WPEN(bit7), BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of
EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data.
Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise,
set CSB HIGH between taking the last data bit (bit0) and the next SCK clock rising. At the other timing, command is
cancelled. Write disable block is determined by BP1 BP0, and the block can be selected from 1/4 , 1/2, and entire of
memory array (Refer to the write disable block setting table.). To the write disabled block, write cannot be made, and only
read can be made.
CSB
SCK
SI
SO
0
0
1
0
2
0
3
0
High-Z
4
0
5
1
7
6
0
8
9
10
11
12
13
14
15
1
bit7
bit6
bit5
bit4
WPEN
0
0
0
bit3
bit2
bit1
bit0
BP1 BP0 WEN R/B
Figure 36. Read status register command
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TSZ02201-0R2R0G100330-1-2
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●WP cancel valid area
WP is normally fixed to “H” or “L” for use, but when WP is controlled so as to cancel write status register command, pay
attention to the following WP valid timing.
While write status register command is executed, by setting WP = “L” in cancel valid area, command can be cancelled. The
area from command ope code to CSB rise at internal automatic write start becomes the cancel valid area. However, once
write is started, by any input write cycle cannot be cancelled. WP input becomes Don’t Care, and cancellation becomes
invalid.
SCK
6
Ope Code
7
15
16
tE/W
Data write time
Data
Valid
(WRSR command is reset by WPB=L)
Invalid
Figure 37. WP valid timing (At inputting WRSR command)
●HOLDB pin
By HOLDB pin, command communication can be stopped temporarily (HOLD status). The command communications are
carried out when the HOLDB pin is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the
HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release
the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point
before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD
status, by starting A4 address input, read can be restarted. When in HOLD status, keep CSB LOW. When it is set
CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Method to cancel each command
○READ, RDSR
・Method to cancel : cancel by CSB = “H”.
Ope code
Address
Data
Ope code
8 bits
16 bits
8 bits
8 bits
Cancel available in all areas of read mode
Data
8 bits
Cancel available in all
areas of rdsr mode
Figure 38. READ cancel valid timing
Figure 39. RDSR cancel valid timing
○WRITE、PAGE WRITE
a：Ope code or address input area
Cancellation is available by CSB=”H”.
b：Data input area (D7 to D1 input area)
Cancellation is available by CSB=”H”.
c：Data input area (D0 area)
In this area, cancellation is not available.
When CSB is set HIGH, write starts.
d：tE/W area
In the area c, by rising CSB, write starts.
While writing, by any input, cancellation cannot be made.
Ope code
Address
Data
tE/W
8bits
16bits
8bits
b
d
a
c
SCK
SI
D7
D6
D5
D4
D3
D2
D1
D0
c
b
Figure 40. WRITE cancel valid timing
Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again.
Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is
recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.
○WRSR
a：From ope code to 15-th clock rise
Cancellation is available by CSB=”H”.
b：From 15-th clock rise to 16-th clock rise (write enable area)
In this area, cancellation is not available.
When CSB is set HIGH, write starts.
c：After 16-th clock rise.
Cancellation is available by CSB=”H”.
However, if write starts (CSB is rised)
in the area b, cancellation cannot be made by any means.
And, by inputting on SCK clock, cancellation cannot be made.
14
SCK
15
D1
SI
b
c
tE/W
Data
8 bits
17
D0
a
Ope code
16
8 bits
a
c
b
Figure 41. WRSR cancel valid timing
Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once
again
Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it
is recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.
○WREN/WRDI
a：From ope code to 7-th clock rise, cancellation is available by CSB = “H”.
b：Cancellation is not available 7-th clock.
6
SCK
7
8
Ope code
8 bits
a
b
Figure 42. WREN/WRDI cancel valid timing
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●I/O peripheral circuits
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller
VOL, IOL with considering VIL characteristics of this IC.
1. Pull up resistance
RPU≧
VOLM≦
Microcontroller
IOLM
RPU
EEPROM
VOLM
IOLM
･･･①
･･･②
VILE
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA,
from the equation ①,
VILE
“L” output
VCC－VOLM
5－0.4
2×10-3
∴RPU≧
2.3[kΩ]
With the value of Rpu to satisfy the above equation, VOLM
becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is
also satisfied.
・VILE :EEPROM VIL specifications
・VOLM :Microcontroller VOL specifications
・IOLM :Microcontroller IOL specifications
RPU≧
“L” input
Figure 43. Pull up resistance
And, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
VOHM
2.Pull down resistance
RPD≧
･･･③
IOHM
VOHM≧
VIHE
･･･④
Microcontroller
EEPROM
VOHM
“H” output
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA,
VIHE=VCC×0.7V, from the equation③,
5－0.5
RPD≧
0.4×10-3
VIHE
IOHM
RPD
“H” input
∴RPD≧
Figure 44. Pull down resistance
11.3[kΩ]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting Vcc/GND level
amplitude of signal, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /
0.2Vcc is input, operation speed becomes slow.*1
In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
(*1 In this case, guaranteed value of operating timing is guaranteed.)
○SO load capacity condition
Load capacity of SO output pin affects upon delay characteristic of SO output (Data output delay time, time from HOLDB
to High-Z, Output rise time, Output fall time.). In order to make output delay characteristic into better, make SO load
capacity small.
EEPROM
SO
CL
Figure 45. SO load capacity
○Other cautions
Make the each wire length from the microcontroller to EEPROM input pin same length, in order to prevent setup / hold
violation to EEPROM, owing to difference of wire length of each input.
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Equivalent circuit
○Output circuit
internal
signal
SO
internal
signal
Figure 46. SO output equivalent circuit
○Input circuit
internal
signal
CSB
internal
signal
Figure 47. CSB input equivalent circuit
SCK
internal
signal
SI
Figure 49. SI input equivalent circuit
Figure 48. SCK input equivalent circuit
HOLDB
internal
signal
WP
internal
signal
Figure 51. WP input equivalent circuit
Figure 50. HOLDB input equivalent circuit
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Notes on power ON/OFF
○At standby
Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial.
○At power ON/OFF
When Vcc rise or fall, set CSB=”H” (=Vcc).
When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may
cause malfunction, erroneous write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all
inputs are canceled.)
Vcc
CSB
Good example
Bad example
Figure 52. CSB timing at power ON/OFF
(Good example) CSB terminal is pulled up to Vcc.
At power OFF, take 10ms or more before supply. If power is turned on without observing this condition, the IC
internal circuit may not be reset.
(Bad example) CSB terminal is “L” at power ON/OFF.
In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction or erroneous write owing
to noises and the likes.
Even when CSB input is High-Z, the status becomes like this case.
○Operating timing after power ON
As shown in Figure 53, at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is
read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.
Even if CSB is fallen at SCK=”H”,
SI status is not read at that edge.
CSB
Command start here. SI is read.
SCK
0
1
2
SI
Figure 53. Operating timing
○At power on malfunction preventing function
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable
status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the
recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to
noises and the likes.
tR
Recommended conditions of tR, tOFF, Vbot
tOFF
tR
Vcc
tOFF
Vbot
0
Vbot
10ms or below
10ms or higher
0.3V or below
100ms or below
10ms or higher
0.2V or below
Figure 54. Rise waveform
○Low voltage malfunction preventing function
LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ. =1.2V) or below, it prevent data rewrite.
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Noise countermeasures
○Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that time, attach it as close to IC as
possible.
And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
○SCK noise
When the rise time of SCK (tRC) is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set
about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise
time of SCK (tRC) 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise
countermeasures. Make the clock rise, fall time as small as possible.
○WP noise
During execution of write status register command, if there exist noises on WP pin, mistake in recognition may occur and
forcible cancellation may result. To avoid this, a Schmitt trigger circuit is built in WP input. In the same manner, a Schmitt
trigger circuit is built in CSB input, SI input and HOLDB input too.
●Notes for use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that
of GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Ordering Information
Product Code Description
B
R
2 5
S
x x x
x
x
x
-
W
xx
BUS type
25：SPI
Operating temperature
-40℃ to+85℃
Capacity
32=32K
256=256K
64=64K
128=128K
Package
F
:SOP8
FJ
:SOP-J8
FV
: SSOP-B8
FVT
: TSSOP-B8
FVJ
: TSSOP-B8J
FVM
: MSOP8
NUX
: VSON008X2030
Double Cell
Packaging and forming specification
E2
: Embossed tape and reel
(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)
TR
: Embossed tape and reel
(MSOP8, VSON008X2030)
●Lineup
Package
Capacity
Type
Quantity
SOP8
SOP-J8
Reel of 2500
SSOP-B8
32K
TSSOP-B8
Reel of 3000
TSSOP-B8J
Reel of 2500
MSOP8
Reel of 3000
VSON008X2030
Reel of 4000
SOP8
SOP-J8
64K
Reel of 2500
SSOP-B8
TSSOP-B8
Reel of 3000
TSSOP-B8J
Reel of 2500
MSOP8
Reel of 3000
SOP8
128K
SOP-J8
SSOP-B8
TSSOP-B8
256K
Reel of 2500
SOP8
SOP-J8
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information
SOP8
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
SOP-J8
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
SSOP-B8
SSOP-B8
3.0±0.2
(MAX 3.35 include BURR)
7
6
5
1
2
3
4
0.1
1.15±0.1
0.3MIN
6.4 ± 0.3
4.4 ± 0.2
8
0.15±0.1
S
(0.52)
0.65
0.1 S
+0.06
0.22 −0.04
0.08
M
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
TSSOP-B8
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
TSSOP-B8J
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
MSOP8
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
)
1pin
Direction of feed
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Physical Dimension Tape and Reel Information - continued
VSON008X2030
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
4000pcs
Direction
of feed
TR
The direction is the 1pin of product is at the upper right when you hold
( reel on the left hand and you pull out the tape on the right hand
Direction of feed
1pin
Reel
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Marking Diagrams
SOP8(TOP VIEW)
SOP-J8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
SSOP-B8(TOP VIEW)
TSSOP-B8(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
MSOP8(TOP VIEW)
TSSOP-B8J(TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
LOT Number
1PIN MARK
1PIN MARK
VSON008X2030 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Marking Information
Capacity
32K
64K
128K
256K
Product Name
Marking
Package Type
S320
SOP8
S320
SOP-J8
S320
SSOP-B8
S320
TSSOP-B8
S320
TSSOP-B8J
S320
MSOP8
S320
VSON008X2030
S640
SOP8
S640
SOP-J8
S640
SSOP-B8
S640
TSSOP-B8
S640
TSSOP-B8J
S640
MSOP8
5S128
SOP8
5S128
SOP-J8
S128
SSOP-B8
5S128
TSSOP-B8
5S256
SOP8
5S256
SOP-J8
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Datasheet
BR25Sxxx-W Series (32K 64K 128K 256K)
●Revision History
Date
Revision
21.Aug.2012
001
Changes
New Release
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TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BR25S128F-W - Web Page
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Constitution Materials List
RoHS
BR25S128F-W
SOP8
2500
2500
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