HSMC HA3669 Npn epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 1/3
HA3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA3669 is designed for using in power amplifier applications,
power switching application.
Absolute Maximum Ratings (Ta=25°C)
TO-92
• Maximum Temperatures
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature ................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
• Maximum Voltages and Currents
BVCBO Collector to Base Breakdown Voltage .................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage................................................................. 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................. 5 V
IC Collector Current (DC) ...................................................................................................... 2 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Ton
Tstg
Tf
Min.
80
80
5
240
-
Typ.
0.15
0.9
100
30
0.2
1.0
0.2
Max.
1000
1000
0.5
1.2
-
Unit
V
V
V
nA
nA
V
V
MHz
pF
uS
uS
uS
Test Conditions
IC=100uA
IC=10mA
IE=100uA
VCB=80V
VEB=5V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz
IB1=-IB2=50mA, Duty Cycle≤1%
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HA3669
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
10000
1000
VCE(sat) @ IC=20IB
o
Saturation Voltage (mV)
125 C
1000
o
hFE
25 C
o
75 C
100
hFE @ VCE=2V
100
o
75 C
o
25 C
o
125 C
10
10
1
10
100
1000
10000
1
Collector Current-IC (mA)
10
100
1000
10000
Collector Current-IC (mA)
Power Derating
Saturation Voltage & Collector Current
1000
800
700
o
Power Dissipation-PD (mW)
Saturation Voltage (mV)
25 C
o
75 C
o
125 C
VBE(s at) @ IC=20IB
600
500
400
300
200
100
0
100
1
10
100
Collector Current-IC (mA)
HA3669
1000
10000
0
50
100
150
200
o
Ambient Temperature-Ta ( C)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200210
Issued Date : 2000.11.01
Revised Date : 2002.04.18
Page No. : 3/3
MICROELECTRONICS CORP.
TO-92 Dimension
α2
A
Marking:
H
A
3 6 6 9
B
1
2
3
Date Code
Control Code
α3
Style: Pin 1.Emitter 2.Collector 3.Base
C
D
H
I
G
α1
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HA3669
HSMC Product Specification
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