BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +125 °C TJ Operating Junction Temperature -65 to +125 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Value Unit PD Symbol Power Dissipation Parameter 232 mW RθJA Thermal Resistance, Junction to Ambient 430 °C/W FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Max. Units 240 320 400 500 0.8 mV mV mV mV V VR Breakdown Voltage IR = 10µA VF Forward Voltage IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA IR Reverse Leakage VR = 25V 2 µA CT Total Capacitance VR = 1V, f = 1.0MHz 10 pF trr Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 5.0 ns ©2005 Fairchild Semiconductor Corporation BAT54SWT1G/BAT54CWT1G Rev. A 1 30 V www.fairchildsemi.com BAT54SWT1G/BAT54CWT1G Schottky Diodes April 2005 Figure 1. Forward Voltage vs Temperature Figure 2. Reverse Leakage Current vs Temperature 1E-3 0.1 125 °C 0.01 1E-3 1E-4 1E-5 Reverse Current, IR[A] Forward Current, IF[A] 1E-4 100 °C 75 °C 25 °C 125 °C 100 °C 1E-5 75 °C 1E-6 1E-7 25 °C 1E-6 0.2 0.4 0.6 1E-8 0.8 0 10 Forward Voltage Drop, VF[V] 20 30 Reverse Voltage, VR[V] Figure 3. Capacitance vs Reverse Bias Voltage 20 Juntion Capacitance, CJ[pF] 18 15 13 10 8 5 3 0 0 2 4 6 8 10 Reverse Voltage, VR[V] BAT54SWT1G/BAT54CWT1G Rev. A 2 www.fairchildsemi.com BAT54SWT1G/BAT54CWT1G Schottky Diodes Typical Performance Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 3 BAT54SWT1G/BAT54CWT1G Rev. A www.fairchildsemi.com BAT54SWT1G/BAT54CWT1G Schottky Diodes TRADEMARKS