Transistors SMD Type PNP Transistors MMBT3906 (KMBT3906) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 Features +0.2 1.6 -0.1 +0.2 2.8 -0.1 3 2 ● Complementary to MMBT3904 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1.1 +0.2 -0.1 ● Marking: 2A 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Collector - Base Voltage Parameter VCBO -40 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage Unit V VEBO -5 Collector Current - Continuous IC -0.2 A Collector Power Dissipation PC 0.2 W Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 ℃ Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -40 V , IE=0 Collector- emittercut-off current ICEX VCE=- 30 V , VEB(off）=3V -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 IC=-10 mA, IB=- 1mA -0.2 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) hfe（1） DC current gain Delay time V -100 IC=-50 mA, IB= -5mA IC= -10 mA, IB= -1mA -0.3 -0.65 IC= -50 mA, IB= -5mA -0.85 100 hfe（2） VCE= -1V, IC=-50mA 60 hfe（3） VCE= -1V, IC=-100mA 30 td VCC=-3.0V,VBE=0.5V 35 tr IC=-10mA,IB1=-1.0mA 35 ts VCC=-3.0V,IC=-10mA 225 Fall time tf IB1=IB2=-1.0mA 75 Collector input capacitance Cib VEB= -0.5V, IE= 0,f=1MHz 10 Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 4.5 VCE= -20V, IC= -10mA,f=100MHz V 300 Rise time fT nA -0.95 VCE= -1V, IC= -10mA Storage time Transition frequency Unit 250 ns pF MHz ■ Classification of hfe(1) Type MMBT3906 Range 100-300 MMBT3906-L MMBT3906-H 100-200 200-300 www.kexin.com.cn 1 Transistors SMD Type MMBT3906 (KMBT3906) Typical Characteristics Static Characteristic COMMON EMITTER Ta=25℃ -500uA -450uA -80 -350uA -300uA -250uA -200uA -40 —— IC COMMON EMITTER VCE=-1V Ta=100℃ -400uA -60 hFE 300 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -100 -150uA 200 Ta=25℃ 100 -100uA -20 IB=-50uA -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC Ta=100℃ -100 Ta=25℃ -30 IC —— Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 -1 -3 -30 -10 COLLECTOR CURRENT IC -100 —— IC -100 -0.0 -200 β=10 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT VBE Cob/ Cib 9 —— IC VCB/ VEB -3 Ta=25℃ -1 Cib 3 . -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— -1 -0.3 IC PC 250 VCE=-20V -10 -3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V -20 (V) Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ Cob Ta=100℃ CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) f=1MHz IE=0/IC=0 -30 -10 -200 (mA) COMMON EMITTER VCE=-1V 400 200 -1 -3 -10 COLLECTOR CURRENT 2 -200 (mA) -300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -500 VCE 0 -0.1 -20 www.kexin.com.cn -30 IC (mA) -50 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150