FAN7384 Half-Bridge Gate-Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN7384 is a monolithic half-bridge gate-drive IC designed for high voltage, high speed driving MOSFETs and IGBTs operating up to +600V. Typically 250mA/500mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V Matched Propagation Delay Below 50ns Output In-Phase with Input Signal 3.3V and 5V Input Logic Compatible Built-in Shoot-Through Prevention Logic Built-in Common Mode dv/dt Noise Canceling Circuit Built-in UVLO Functions for Both Channels Built-in Cycle-by-Cycle Shutdown Function Built-in Soft-Off Function Built-in Bi-Directional Fault Function Built-in Short-Circuit Protection Function Fairchild’s high-voltage process and common-mode noise canceling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS = -9.8V (typical) for VBS =15V. The UVLO circuits prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 250mA/500mA, respectively, which is suitable for half-bridge and fullbridge applications in motor drive systems. 14-SOP Applications Motor Inverter Driver Normal Half-Bridge and Full-Bridge Driver 1 Switching Mode Power Supply Ordering Information Part Number FAN7384M(1) FAN7384MX(1) Package Pb-Free Operating Temperature Range 14-SOP Yes -40°C ~ 125°C Packing Method Tube Tape & Reel Note: 1. These devices passed wave soldering test by JESD22A-111. © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com FAN7384 Half-Bridge Gate-Drive IC January 2007 VDC VCC VDD HO VS U U FO VB VS V HIN LIN FO SD FO CSC VSL LO CSC GND V VB W W VS SD SD LO FAN7384 HIN LIN FAN7384 HIN LIN HO HO FAN7384 3-Phase Motor Controller UU UL VU UL WU WL VDD VDD VB VSL LO CSC GND VSL GND FAN7384 Rev.02 Figure 1. 3-Phase Motor Drive Application VDC VCC PHB FO FAULT SHUTDOWN VS SD DC Motor Controller VDD LIN HIN FO SD FAN7384 LIN HIN VB HO FAN7384 PHA VDD LO VSL VB HO VS Forward M Reverse LO CSC VSL CSC FAN7384 Rev.01 Figure 2. DC Motor Drive Application © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 2 FAN7384 Half-Bridge Gate-Drive IC Typical Application Diagrams 14 VB 13 HO 12 VS 4 VDD 9 LO 8 VSL 5 FO UVLO HIN 3 SD 2 R Q UVLO SHOOT-THROUGH PREVENTION GND/VSL LEVEL SHIFTER LS(ON/OFF) CONTROL LOGIC FAULT LOGIC DELAY SOFT-OFF ISOFT 6 ONE-SHOT TRIGGER 0.5V GND S SCHMITT TRIGGER INPUT VDD_UVLO CSC R DRIVER 1 NOISE CANCELLER DRIVER LIN PULSE GENERATOR HS(ON/OFF) ONE-SHOT TRIGGER VDD_UVLO 7 FAN7384 Rev.03 Figure 3. Functional Block Diagram © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 3 FAN7384 Half-Bridge Gate-Drive IC Internal Block Diagram FAN7384 Half-Bridge Gate-Drive IC Pin Configuration 1 14 VB SD 2 13 HO HIN 3 12 VS VDD 4 11 NC FO 5 10 NC CSC 6 9 LO GND 7 8 VSL FAN7384 LIN FAN7384 Rev.00 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name Description 1 LIN Logic Input for low-side gate driver 2 SD Shutdown control input with active low 3 HIN Logic Input for high-side gate driver 4 VDD Low-side power supply voltage 5 FO Bi-direction fault pin with open drain 6 CSC Short-circuit current detection input 7 GND Ground 8 VSL Low-side supply offset voltage 9 LO Low-side gate driver output 10 NC No connection 11 NC No connection 12 VS High-side floating supply offset voltage 13 HO High-side gate driver output 14 VB High-side floating supply voltage © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 4 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C, unless otherwise specified. Symbol Parameter VS High-side offset voltage VS VB High-side floating supply voltage VB Min. Max. Unit VB-25 VB+0.3 V -0.3 625 V VS-0.3 VB+0.3 V VHO High-side floating output voltage VDD Low-side and logic-fixed supply voltage -0.3 25 V VIN Logic input voltage (HIN, LIN, SD) -0.3 VDD+0.3 V VCSC Current sense input voltage -0.3 VDD+0.3 V VFO Fault output voltage -0.3 VDD+0.3 V 50 V/ns dVS/dt PD(2)(3)(4) Allowable offset voltage slew rate Power dissipation 1.0 W θJA Thermal resistance, junction-to-ambient 110 °C/W TJ Junction temperature 150 °C TS Storage temperature 150 °C -55 Notes: 2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Condition Min. Max. Unit VB High-side floating supply voltage VS+13 VS+20 V VS High-side floating supply offset voltage 6-VDD 600 V VDD Supply voltage 13 20 V VHO High-side output voltage VS VB V VLO Low-side output voltage GND VDD V VIN Logic input voltage (HIN, LIN, SD) GND VDD V VFO Fault output voltage -0.3 VDD+0.3 V TA Ambient temperature -40 125 °C © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 5 FAN7384 Half-Bridge Gate-Drive IC Absolute Maximum Ratings VBIAS (VDD, VBS) = 15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to GND and VS is applicable to HO and LO. Symbol Characteristics Condition Min. Typ. Max. Unit LOW SIDE POWER SUPPLY SECTION IQDD Quiescent VDD supply current VLIN=0V or 5V 600 800 μA IPDD Operating VDD supply current fLIN=20kHz, rms value 950 1300 μA VDDUV+ VDD supply under-voltage positive going threshold VDD=Sweep 10.9 11.9 12.9 V VDDUV- VDD supply under-voltage negative going VDD=Sweep threshold 10.4 11.4 12.4 V VDDHYS VDD supply under-voltage lockout hysteresis VDD=Sweep 0.5 V BOOTSTRAPPED POWER SUPPLY SECTION VBSUV+ VBS supply under-voltage positive going threshold VBS=Sweep 10.6 11.5 12.4 V VBSUV- VBS supply under-voltage negative going VBS=Sweep threshold 10.1 11.0 11.9 V VBSHYS VBS supply under-voltage lockout hysteresis VBS=Sweep ILK Offset supply leakage current VB=VS=600V IQBS Quiescent VBS supply current VHIN=0V or 5V 50 90 μA IPBS Operating VBS supply current fHIN=20kHz, rms value 400 600 μA 100 mV 100 mV 0.5 V 10 μA GATE DRIVER OUTPUT SECTION VOH High-level output voltage, VBIAS-VO IO=0mA (No Load) VOL Low-level output voltage, VO IO=0mA (No Load) IO+ Output HIGH short-circuit pulse current VO=0V, VIN=5V with PW<10µs 200 250 mA IO- Output LOW short-circuit pulsed current VO=15V, VIN=0V with PW<10µs 420 500 mA VS Allowable negative VS pin voltage for IN signal propagation to HO -9.8 VSL-GND VSL-GND/GND-VSL voltage educability -7.0 -7.0 V 7.0 V SHUTDOWN CONTROL SECTION (SD) SD+ Shutdown "1" input voltage SD- Shutdown "0" input voltage 1.2 V 2.5 V 2.5 V LOGIC INPUT SECTION (HIN, LIN) VIH Logic "1" input voltage VIL Logic "0" input voltage VINHYS 1.2 Logic input hysteresis voltage 0.5 IIN+ Logic "1" input bias current VIN=5V IIN- Logic "0" input bias current VIN=0V © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 10 15 V V 20 μA 2.0 μA www.fairchildsemi.com 6 FAN7384 Half-Bridge Gate-Drive IC Electrical Characteristics VBIAS (VDD, VBS) = 15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to GND and VS is applicable to HO and LO. Symbol Characteristics Condition Min. Typ. Max. Unit SHORT-CIRCUIT PROTECTION VCSCREF Short-circuit detector reference voltage 0.47 0.50 0.53 V ICSCIN Short-circuit input current VCSCIN=1V, RCSCIN=100KΩ 5 10 15 μA ISOFT Soft turn-off source current VDD=15V 5 10 15 mA -VCSC Negative CSC pin immunity(5) Voltage on CSC pin up to -12V, Time<2μs -20 V FAULT DETECTION SECTION VFINH Fault input high level voltage VFINL Fault input low level voltage VFINHYS Fault input hysteresis 2.5 1.2 voltage(5) 0.5 VFOH Fault output high level voltage VCSC=0V, RPULL-UP=4.7KΩ VFOL Fault output low level voltage VCSC=1V, IFO=2mA Fault output pulse width VCSCIN=1V tFO V V V 4.7 V 60 0.8 V 100 µs Note: 5. These parameters, although guaranteed, not 100% tested in production. Dynamic Electrical Characteristics TA=25°C, VBIAS (VDD, VBS) = 15.0V, VS = GND, CLoad = 1000pF unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit ton Turn-on propagation delay VS=0V 180 260 ns toff Turn-off propagation delay VS=0V 170 240 ns tr Turn-on rise time 50 100 ns tf Turn-off fall time 30 80 ns 50 ns 120 170 ns MT Delay matching DT Dead-time 80 tUVFLT Under-voltage filtering time(6) tCSCFLT CSC pin filtering tCSCFO Time from CSC triggering to tCSCLO Time from CSC triggering to low-side From VCSC=1V to starting gate gate output(6) turn-off tSDFO Shutdown to FO propagation delay(6) tSDOFF Shutdown to HIGH/LOW-side gate time(6) FO(6) off(6) 16 µs 300 ns 350 ns 600 ns 60 ns 100 ns Note: 6. These parameters, although guaranteed, not 100% tested in production. © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 7 FAN7384 Half-Bridge Gate-Drive IC Electrical Characteristics (Continued) 13.0 13.0 12.5 12.5 12.0 VDDUV- [V] VDDUV+ [V] 13.5 12.0 11.5 11.5 11.0 11.0 10.5 10.5 -40 -20 0 20 40 60 80 100 10.0 -40 120 -20 0 Temperature [°C] Figure 5. VDD UVLO (+) vs. Temperature VBSUV+ [V] VDDHYS [V] 0.4 100 120 12.0 11.5 11.0 0.2 10.5 -20 0 20 40 60 80 100 10.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 7. VDD UVLO Hysteresis vs. Temperature Figure 8. VBS UVLO (+) vs. Temperature 1.0 12.5 12.0 0.8 11.5 VBSHYS [V] VBSUV- [V] 80 12.5 0.6 11.0 10.5 0.6 0.4 0.2 10.0 -20 0 20 40 60 80 100 0.0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 9. VBS UVLO (-) vs. Temperature Figure 10. VBS UVLO Hysteresis vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 60 13.0 0.8 9.5 -40 40 Figure 6. VDD UVLO (-) vs. Temperature 1.0 0.0 -40 20 Temperature [°C] www.fairchildsemi.com 8 FAN7384 Half-Bridge Gate-Drive IC Typical Characteristics 800 80 IQBS [μA] 100 IQDD [μA] 1000 600 400 60 40 200 0 -40 20 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 1600 1000 1400 800 1200 1000 100 120 200 -20 0 20 40 60 80 100 0 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 13. VDD Operating Current vs. Temperature Figure 14. VBS Operating Current vs. Temperature 30 20 25 16 20 ICSCIN [μA] IIN+ [μA] 80 400 600 15 10 12 8 4 5 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 15. Logic Input Current vs. Temperature Figure 16. ICSCIN vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 60 600 800 0 -40 40 Figure 12. VBS Quiescent Current vs. Temperature IPBS [μA] IPDD [μA] Figure 11. VDD Quiescent Current vs. Temperature 400 -40 20 Temperature [°C] www.fairchildsemi.com 9 FAN7384 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 20 120 100 tr [nsec] ISOFT [mA] 15 10 80 60 40 5 20 0 -40 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] Figure 17. ISOFT vs. Temperature ton [nsec] tf [nsec] 40 100 120 200 150 100 20 50 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] 250 2.5 200 2.0 VIH [V] 3.0 150 1.0 50 0.5 20 40 60 60 80 100 120 1.5 100 0 40 Figure 20. Turn-on Delay Time vs. Temperature 300 -20 20 Temperature [°C] Figure 19. Turn-off Falling Time vs. Temperature toff [nsec] 80 250 60 80 100 0.0 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 21. Turn-off Delay Time vs. Temperature Figure 22. Logic Input High Voltage vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 60 300 80 0 -40 40 Figure 18. Turn-on Rising Time vs. Temperature 100 0 -40 20 Temperature [°C] www.fairchildsemi.com 10 FAN7384 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 3.0 1.0 0.8 2.0 VINHYS [V] VIL [V] 2.5 1.5 1.0 0.6 0.4 0.2 0.5 0.0 -40 -20 0 20 40 60 80 100 0.0 -40 120 -20 0 Temperature [°C] 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.0 0.5 0.5 0 20 40 60 60 80 100 120 1.5 1.0 -20 40 Figure 24. Logic Input Hysteresis vs. Temperature SDBAR- [V] SDBAR+ [V] Figure 23. Logic Input Low Voltage vs. Temperature 0.0 -40 20 Temperature [°C] 80 100 0.0 -40 120 -20 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 25. SD Positive Threshold vs. Temperature Figure 26. SD Negative Threshold vs. Temperature 0.60 2.4 2.0 VFINH [V] VCSCREF [V] 0.55 0.50 1.6 1.2 0.8 0.45 0.4 0.40 -40 -20 0 20 40 60 80 100 0.0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 27. VCSCREF vs. Temperature Figure 28. Fault Input High Voltage vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 -20 www.fairchildsemi.com 11 FAN7384 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 1.0 6.0 0.8 VFOL [V] VFOH [V] 5.6 5.2 0.4 0.2 4.8 -40 0.6 -20 0 20 40 60 80 100 0.0 -40 120 -20 0 Temperature [°C] Figure 29. Fault Output High Voltage vs. Temperature 80 100 120 160 -9 DT [nsec] VS [V] 60 200 -8 -10 -11 120 80 40 -12 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 31. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature Figure 32. Dead Time vs. Temperature © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 40 Figure 30. Fault Output Low Voltage vs. Temperature -7 -13 -40 20 Temperature [°C] www.fairchildsemi.com 12 FAN7384 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) The overall switching timing waveforms definition of FAN7384 as shown Figure 33. LIN SD Shutdown Disable Skip Low-Side Output Disable Low-Side Output Disable UVLO- VDD tUVFLT 0.5V VCSC tCSCFO tCSCFO tFO tFO FO tCSCLO LO tCSCLO Soft-Off Operating Soft-Off Operating Under-Voltage Detection Point Shutdown Disable Point Shutdown Enable Point Short-Circuit Detection Point FAN7384 Rev.03 Figure 33. Switching Timing Waveforms Definition © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 13 FAN7384 Half-Bridge Gate-Drive IC Switching Time Definitions 1. Protection Function HIN/LIN 1.1 Under-Voltage Lockout (UVLO) The high- and low-side drivers include under-voltage lockout (UVLO) protection circuitry that monitors the supply voltage (VDD) and bootstrap capacitor voltage (VBS) independently. It can be designed to prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Moreover, the UVLO hysteresis prevents chattering during power supply transitions. If the supply voltage (VDD) maintains an under-voltage condition over under-voltage filtering times (typically 16µs), the fault and soft-off circuits are activated, as shown Figure 34. LIN/HIN Shoot-Through Prevent HO/LO After DT LO/HO FAN7384 Rev.01 LIN Figure 36. Waveforms for Shoot-Through Prevention UVLO+ UVLO- VDD 1.3 Over-Current Protection Function The FAN7384 has over-current detection circuitry that monitors the current-by-current sensing resistor connected from the low-side switch source (VSL) to ground. tUVFLT tFO tCSCFO FO LO FAN7384 Rev.01 90% tCSCLO t1 t2 It is a built-in time-filler from the over-current event to prevent malfunction from a noise source, such as leading-edge pulse in inductive load application, as shown Figure 37. t3 The sensing current is calculated as follows: Figure 34. Waveforms for Under-Voltage Lockout ICS = VCSCREF [ A] RCS (1) 1.2 Shoot-Through Prevention Function where, The FAN7384 has a shoot-through prevention circuitry that monitors the high- and low-side inputs. It can be designed to prevent outputs of high- and low-side turning on at same time, as shown Figure 35 and 36. VCSCREF: Reference voltage of current sense comparator RCS: Current sensing resistor HIN/LIN LIN Low-Side Output Disable LIN/HIN HO/LO 0.5V VCSC Shoot-Through Prevent FO After DT tCSCFO tFO tCSCLO LO LO/HO Soft-Off Short-Circuit Operating Detection Point After DT FAN7384 Rev.00 Figure 35. Waveforms for Shoot-Through Prevention Figure 37. Waveforms for Short-Circuit Protection © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 FAN7384 Rev.03 www.fairchildsemi.com 14 FAN7384 Half-Bridge Gate-Drive IC Typical Application Information 2.2 Gate-Drive Loop For optimum performance, considerations must be taken during printed circuit board (PCB) layout. Current loops behave like antennae, able to receive and transmit noise. To reduce the noise coupling/emission and improve the power switch turn-on and off performance, gate-drive loops must be reduced as much as possible. 2.1 Supply Capacitors If the output stages are able to quickly turn on a switching device with a high value of current, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance. 2.3 Ground Plane To minimize noise coupling, the ground plane should not be placed under or near the high-voltage floating side. © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 15 FAN7384 Half-Bridge Gate-Drive IC 2. Layout Considerations FAN7384 Half-Bridge Gate-Drive IC Package Dimensions 14-SOP Dimensions are in millimeters unless otherwise noted. MIN #8 MAX0.10 MAX0.004 1.80 MAX 0.071 5.72 0.225 8° 3.95 ±0.20 0.156 ±0.008 0~ +0.10 0.20 -0.05 +0.004 0.008 -0.002 6.00 ±0.30 0.236 ±0.012 1.27 0.050 #7 +0.10 0.406 -0.05 +0.004 0.016 -0.002 #14 8.70 MAX 0.343 #1 8.56 ±0.20 0.337 ±0.008 ( 0.47 ) 0.019 1.55 ±0.10 0.061 ±0.004 0.05 0.002 0.60 ±0.20 0.024 ±0.008 January 2001, Rev. A Figure 38. 14-Lead Small Outline Package (SOP) © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 16 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 © 2006 Fairchild Semiconductor Corporation FAN7384 Rev. 1.0.3 www.fairchildsemi.com 17 FAN7384 Half-Bridge Gate-Drive IC FAIRCHILD SEMICONDUCTOR TRADEMARKS