H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S Rev.2.00, Aug.01.2003, page 1 of 9 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 300 V Gate to source voltage VGSS ±30 V Drain current ID 40 A 160 A Note1 Drain peak current ID (pulse) Body-drain diode reverse drain current IDR 40 A Body-drain diode reverse drain peak current IDR (pulse) Note1 160 A Avalanche current IAPNote3 30 A Note2 Channel dissipation Pch 150 W Channel to case Thermal Impedance θch-c 0.833 °C /W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.2.00, Aug.01.2003, page 2 of 9 H5N3003P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 300 — — V ID = 10mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 300V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.0 V VDS = 10V, ID = 1mA Forward transfer admittance |yfs| 20 35 — S ID = 20A, VDS = 10VNote4 Static drain to source on state resistance RDS(on) — 0.058 0. 069 Ω ID = 20A, VGS= 10VNote4 Input capacitance Ciss — 5150 — pF VDS = 25V Output capacitance Coss — 560 — pF VGS = 0 Reverse transfer capacitance Crss — 90 — pF f = 1MHz Turn-on delay time td(on) — 60 — ns ID= 20A Rise time tr — 185 — ns RL = 7.5Ω Turn-off delay time td(off) — 220 — ns VGS = 10V Fall time tf — 150 — ns Rg=10 Ω Total gate charge Qg — 130 — nC VDD = 240V Gate to source charge Qgs — 25 — nC VGS = 10V Gate to drain charge Qgd — 60 — nC ID = 40A Body–drain diode forward voltage VDF — 1.0 1.5 V IF = 40A, VGS = 0 Body–drain diode reverse recovery trr time — 280 — ns IF = 40A, VGS = 0 diF/dt=100A/µs Body–drain diode reverse recovery Qrr charge — 2.5 — µC Notes: 4. Pulse test Rev.2.00, Aug.01.2003, page 3 of 9 H5N3003P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 100 50 PW 30 DC 10 er 3 50 100 150 200 1 6V 60 5.5 V 20 0 VGS = 5 V 4 8 12 Drain to Source Voltage Rev.2.00, Aug.01.2003, page 4 of 9 16 20 VDS (V) ID (A) Pulse Test 80 40 ion s( 1s c= ho t) (T 25 °C ) 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 7V m at Ta = 25°C Tc (°C) Drain Current ID (A) Drain Current 10 V 8V s limited by RDS(on) Typical Output Characteristics 100 10 Operation in 0.1 Case Temperature = 1 this area is 0.3 0 Op 1m 10 µ 0µ s s 10 100 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 VDS = 10 V Pulse Test 80 60 40 25°C Tc = 75°C 20 0 –25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) H5N3003P Pulse Test 4 3 I D = 40 A 2 20 A 1 10 A Static Drain to Source on State Resistance RDS(on) (Ω) 0.02 0.01 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 V GS = 10 V I D = 40 A 0.12 20 A 0.08 10 A 0.04 0 –40 0 40 80 120 Case Temperature Tc (°C) Rev.2.00, Aug.01.2003, page 5 of 9 160 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 5 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 V DS = 10 V Pulse Test 0.5 0.2 0.2 5 10 20 Drain Current ID (A) 0.5 1 2 50 100 H5N3003P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 VGS = 0 f = 1 MHz 10000 di / dt = 100 A / µs V GS = 0, Ta = 25°C Ciss 5000 2000 1000 Coss 500 200 100 Crss 50 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 40 60 Drain to Source Voltage 400 300 V DS = 50 V 100 V 240 V VGS VDD 200 100 0 16 12 8 V DS = 240 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) Rev.2.00, Aug.01.2003, page 6 of 9 4 0 200 Switching Characteristics 10000 Switching Time t (ns) I D = 40 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 500 80 100 VDS (V) V GS = 10 V, V DD = 150 V PW = 10 µs, duty < 1 % R G =10 Ω tf 1000 tr t d(off) tf 100 t d(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N3003P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 80 V GS = 0 V 60 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 V DS = 10 V 4 I D = 10mA 3 1mA 0.1mA 2 1 0 -50 0 50 100 Case Temperature VSD (V) Switching Time Test Circuit 150 Waveform Vout Monitor Vin Monitor 200 Tc (°C) 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 150 V Vout 10% 10% 90% td(on) Rev.2.00, Aug.01.2003, page 7 of 9 tr 10% 90% td(off) tf H5N3003P Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ lse t ho T 1s Rev.2.00, Aug.01.2003, page 8 of 9 PW T PW pu 100 µ D= 1m 100 m 10 m Pulse Width PW (s) 1 10 H5N3003P Package Dimensions Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 15.6 ± 0.3 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Aug.01.2003, page 9 of 9 TO-3P — Conforms 5.0 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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