ON MJD32CT4 Complementary power transistor Datasheet

MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Features
•
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Packages
MARKING
DIAGRAMS
4
1 2
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
VCEO
MJD31, MJD32
MJD31C, MJD32C
Collector−Base Voltage
VCB
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Max
Unit
Vdc
40
100
40
100
1
5
Vdc
Collector Current − Continuous
− Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
15
0.12
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
1.56
0.012
W
W/°C
−65 to
+ 150
°C
TJ, Tstg
AYWW
J3xxG
DPAK−3
CASE 369D
STYLE 1
YWW
J3xxG
4
Vdc
VEB
Operating and Storage Junction
Temperature Range
3
DPAK
CASE 369C
STYLE 1
2
3
A
Y
WW
xx
G
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.3
°C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
80
°C/W
TL
260
°C
Lead Temperature for Soldering Purposes
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 8
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
40
100
−
−
ICEO
−
50
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
−
20
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
1
mAdc
25
10
−
50
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
Vdc
MJD31, MJD32
MJD31C, MJD32C
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
−
1.2
Vdc
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
−
1.8
Vdc
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
−
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
−
−
DYNAMIC CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.
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2
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
VCC
+30 V
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
RC
25 ms
2 20
+11 V
RB
SCOPE
0
1.5 15
TA (SURFACE MOUNT)
TC
1 10
0.5
5
0
0
25
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 2. Switching Time Test Circuit
2
0.3
3
2
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
1
t, TIME (s)
μ
t, TIME (s)
μ
0.7
0.5
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
1
D1
51
-9 V
tr @ VCC = 10 V
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.03
0.02
0.03
1
0.7
0.5
0.3
0.2
td @ VBE(off) = 2 V
0.05 0.07 0.1
0.5 0.7
0.03
0.03
1
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
2
3
D = 0.5
0.2
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.1
0.05
0.07
0.05
0.01
0.03
0.3
0.1
0.07
0.05
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
Figure 5. Thermal Response
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3
20
30
50
100
200 300
500
1k
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
10
1
0.01
0.6
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
−55°C
0.1
1
10
25°C
100
10
1
0.01
150°C
0.2
25°C
0.1
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
1.2
1.1
0.9
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.01
0.1
1
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
Figure 9. Base−Emitter Saturation Voltage
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE = 5 V
IC/IB = 10
1.0
Figure 8. Collector−Emitter Saturation Voltage
VBE(on), BASE−EMITTER ON VOLTAGE (V)
10
Figure 7. DC Current Gain at VCE = 2 V
0.3
0.2
0.001
1
Figure 6. DC Current Gain at VCE = 4 V
0.4
1.1
0.1
IC, COLLECTOR CURRENT (A)
0.5
1.2
−55°C
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0
0.001
VCE = 2 V
150°C
hFE, DC CURRENT GAIN
25°C
100
1000
VCE = 4 V
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
10
2
TA =
25°C
1.6
1.2
100 mA
500 mA
0.8
IC = 3 A
1A
0.4
10 mA
0
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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4
1000
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
Cib
100
Cob
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
0.1
1
10
VR, REVERSE VOLTAGE (V)
VCE = 5 V
TA = 25°C
10
1
0.001
1
100
Figure 12. Capacitance
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
1
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
http://onsemi.com
5
100
10
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1000
hFE, DC CURRENT GAIN
100
−55°C
10
1
0.01
0.9
1.4
0.4
0.3
0.2
25°C
0.1
0
0.001
0.01
0.1
1
10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
Figure 18. Base−Emitter Saturation Voltage
VCE = 5 V
1.0
0.9
150°C
25°C
0.6
−55°C
0.3
0.2
0.001
1
IC/IB = 10
150°C
0.5
0.4
0.1
Figure 16. DC Current Gain at VCE = 2 V
0.6
0.5
0.01
Figure 15. DC Current Gain at VCE = 4 V
−55°C
0.7
10
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.8
−55°C
1
10
0.7
1.1
100
IC, COLLECTOR CURRENT (A)
0.8
1.2
VBE(on), BASE−EMITTER ON
VOLTAGE (V)
1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
1
0.1
VCE = 2 V
25°C
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1000
VCE = 4 V
25°C
150°C
2
TA =
25°C
500 mA
1.6
100 mA
1.2
1A
IC = 3 A
0.8
0.4
0
10 mA
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
Figure 19. Base−Emitter “On” Voltage
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6
1000
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
Cib
100
Cob
10
1
0.1
1
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
VCE = 5 V
TA = 25°C
10
1
0.001
100
VR, REVERSE VOLTAGE (V)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 21. Capacitance
Figure 22. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
1 ms
1
1s
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area
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7
100
10
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD31CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD31C1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD31CRLG
DPAK
(Pb−Free)
369C
1800 Tape & Reel
MJD31CT4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD31T4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD32CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD32CRLG
DPAK
(Pb−Free)
369C
1800 Tape & Reel
DPAK
369C
2500 Tape & Reel
MJD32CT4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
MJD32RLG
DPAK
(Pb−Free)
369C
1800 Tape & Reel
MJD32T4G
DPAK
(Pb−Free)
369C
2500 Tape & Reel
Device
MJD32CT4
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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8
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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