DZTA42Q 300V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) BVCEO > 300V IC = 500mA High Collector Current 2W Power Dissipation Low Saturation Voltage VCE(SAT) < 500mV @ 20mA Applications Complementary PNP Type: DZTA92 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 Switch-Mode Power Supplies (SMPS) Video Output Stages Motor Driver C B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 and 5) Product DZTA42Q-13 Notes: Compliance Automotive Marking K3M Reel Size (inches) 13 Tape Width (mm) 12 Quantity per Reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 (Top (Top View) View) YWW K3M DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 K3M = Product Type Marking Code = Manufacturer’s Code Marking YWW = Date Code Marking Y = Last Digit of Year (ex: 6 = 2016) WW = Week Code (01 to 53) 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DZTA42Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Base Current IB 100 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RθJA Value 2 1 62 125 Unit W °C/W RθJL 19.4 °C/W TJ, TSTG -65 to +150 °C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except mounted on minimum recommended pad (MRP) layout. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DZTA42Q 160 60 50mm x 50mm 1oz Cu Maximum Power (W) O Thermal Resistance ( C/W) Thermal Characteristics and Derating Information O 50 40 Tamb = 25 C D=0.5 30 20 D=0.2 Single Pulse D=0.05 10 D=0.1 0 µ 100μ 1m 10m 100m 1 10 100 140 O 120 80 60 40 20 0 µ 100μ 1k 1.5 1.0 0.5 40 60 80 10m 100m 1 10 100 1k Pulse Power Dissipation IC, Collector Current (A) Max Power Dissipation (W) 50mm x 50mm 1oz Cu 20 1m Pulse Width (s) Transient Thermal Impedance 0.0 0 Single pulse 100 Pulse Width (s) 2.0 50mm x 50mm 1oz Cu Tamb = 25 C 100 120 140 160 O Temperature ( C) VCE, Collector-Emitter Voltage (V) Derating Curve DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 Safe Operating Area 3 of 7 www.diodes.com May 2016 © Diodes Incorporated DZTA42Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector-Base Cut-off Current Emitter-Base Cut-off Current ON CHARACTERISTICS (Note 10) BVCBO BVCEO BVEBO ICBO IEBO 300 300 6 — — — — — — — — — — 0.1 0.1 V V V µA IC = 100µA IC = 1mA IE = 100µA VCB = 200V VEB = 6V Collector-Emitter Saturation Voltage VCE(SAT) — — 0.5 V IC = 20mA, IB = 2mA Base-Emitter Saturation Voltage VBE(SAT) — — 0.9 V IC = 20mA, IB = 2mA hFE 25 40 40 — — — — — — — IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V Transition Frequency fT 50 — — MHz IC = 10mA, VCE = 20V f = 100MHz Output Capacitance Cobo — — 3 pF VCB = 20V, f = 1MHz Static Forward Current Transfer Ratio Test Condition SMALL SIGNAL CHARACTERISTICS 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Note: Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.2 250 VCE = 5V IB = 8mA 0.15 200 IB = 6mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IB = 10mA IB = 4mA 0.1 IB = 2mA IB = 1mA 0.05 T A = 150 ° C TA = 85° C 150 TA = 25° C 100 TA = -55° C 50 0 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector-Emitter Voltage DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 4 of 7 www.diodes.com 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 2 Typical DC Current Gain vs. Collector Current May 2016 © Diodes Incorporated DZTA42Q VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.5 V CE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.4 0.3 TA = 150° C 0.2 TA = 85° C TA = 25° C 0.1 TA = -55° C 0 0.01 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 120 1.2 f = 1MHz IC/IB = 10 100 1 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 0.8 TA = -55° C 0.6 TA = 25° C 0.4 80 60 Cibo 40 TA = 85° C 20 0.2 Cobo 0 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 6 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 200 160 120 80 VCE = 20V f = 100MHz 40 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Figure 7 Typical Gain-Bandwidth Product vs. Collector Current DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DZTA42Q Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A1 7° 7° A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X Note: C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DZTA42Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DZTA42Q Datasheet Number: DS38748 Rev. 1 - 2 7 of 7 www.diodes.com May 2016 © Diodes Incorporated