SavantIC Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD239/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD240 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD240A VALUE -55 Open emitter -70 BD240B -90 BD240C -115 BD240 -45 BD240A UNIT Open base -60 BD240B -80 BD240C -100 Open collector V V -5 V IC Collector current -2 A ICM Collector current-peak -4 A IB Base current -0.6 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD240 VCEO(SUS) VCEsat Collector-emitter sustaining voltage MIN TYP. MAX UNIT -45 BD240A -60 IC=-30mA; IB=0 V BD240B -80 BD240C -100 Collector-emitter saturation voltage IC=-1 A;IB=-0.2 A -0.7 V VBE Base-emitter on voltage IC=-1A ; VCE=-4V -1.3 V ICEO Collector cut-off current -0.3 mA -0.2 mA -1 mA BD240/A ICES VCE=-30V; IB=0 BD240B/C VCE=-60V; IB=0 BD240 VCE=-45V; VBE=0 BD240A VCE=-60V; VBE=0 BD240B VCE=-80V; VBE=0 BD240C VCE=-100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-0.2A ; VCE=-4V 40 hFE-2 DC current gain IC=-1A ; VCE=-4V 15 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD240/A/B/C