DSK BYD31DZ Fast recovery rectifier Datasheet

Diode Semiconductor Korea BYD31D(Z)---BYD31M(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 0.5 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cos t
Diffus ed junction
DO - 41
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Dimensions in millimeters
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYD
31D
BYD
31G
BYD
31J
BYD
31K
BYD
31M
UNITS
Maximum recurrent peak reverse voltage
V RRM
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
140
280
420
560
700
V
Maximum DC blocking voltage
V DC
200
200
600
800
1000
V
Maximum average forw ard rectif ied current
9.5mm lead length,
@TA =75
IF(AV)
0.5
A
IFSM
15.0
A
VF
1.35
V
Peak forw ard surge current
10ms single half-sine-w ave
@TJ =125
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 0.5 A
Maximum reverse current
@TA =25
at rated DC blocking voltage
@TA =100
IR
5.0
A
100.0
Maximum reverse recovery time (Note1)
t rr
250
ns
Typical junction capacitance
(Note2)
CJ
12
pF
Typical thermal resistance
(Note3)
Rθ JA
55
TJ
-55 ---- + 150
TSTG
- 55 ---- + 150
Operating junction temperature range
Storage temperature range
/W
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
BYD31D(Z)---BYD31M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t rr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
0
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
SET TIMEBASEFOR 50/100 ns /cm
0.6
FIG.3 --PEAK FORWARD SURGE CURRENT
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140 160
180
200
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 --FORWARD DERATING CURVE
25
20
15
T J=125
8.3ms Single Half
Sine-Wave
10
5
0
1
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.5-- TYPICAL JUNCTION CAPACITANCE
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
10
10
TJ=25
Pulse Width=300 µS
JUNCTION CAPACITANCE,pF
INSTANTANEOUS FORWARD CURRENT
AMPERES
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
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