Luguang BZX84C4V7W Zener diode Datasheet

BZX84C SERIES
Zener Diode
SOT-323
Features
—
—
—
—
Planar Die Construction
200mW Power Dissipation
Zener Voltages from 2.4V - 39V
Ultra-Small Surface Mount Package Power dissipation
Dimensions in inches and (millimeters)
Maximum Ratings
@TA=25℃ unless otherwise specified
Characteristic
Forward Voltage (Note 2)
Symbol
@ IF = 10mA
Power Dissipation(Note 1)
Value
Unit
VF
0.9
V
Pd
200
mW
Thermal Resistance, Junction to Ambient Air
RθJA
625
℃/ W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +150
℃
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mail:[email protected]
BZX84C SERIES
Zener Diode
Electrical Characteristics
Type
Number
@ TA = 25°C unless otherwise specified
Zener Voltage
Range (Note 2)
Marking
Code
VZ @ IZT
Maximum Zener Impedance
(Note 3)
IZT
Nom (V)
Min (V)
Max (V)
mA
ZZT @ IZT
ZZK @ IZK
W
Maximum
Reverse
Current
Temperature
Coefficient of
Zener Voltage
@ IZT = 5mA
(mV/°C)
IZK
IR
@VR
mA
uA
V
Min
Max
BZX84C2V4W
KRB
2.4
2.2
2.6
5.0
100
600
1.0
50
1.0
-3.5
0
BZX84C2V7W
KRC
2.7
2.5
2.9
5.0
100
600
1.0
20
1.0
-3.5
0
BZX84C3V0W
KRD
3.0
2.8
3.2
5.0
95
600
1.0
20
1.0
-3.5
0
BZX84C3V3W
KRE
3.3
3.1
3.5
5.0
95
600
1.0
5.0
1.0
-3.5
0
BZX84C3V6W
KRF
3.6
3.4
3.8
5.0
90
600
1.0
5.0
1.0
-3.5
0
BZX84C3V9W
KRG
3.9
3.7
4.1
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V3W
KRH
4.3
4.0
4.6
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V7W
KR1
4.7
4.4
5.0
5.0
80
600
1.0
3.0
2.0
-3.5
0.2
BZX84C5V1W
KR2
5.1
4.8
5.4
5.0
60
500
1.0
2.0
2.0
-2.7
1.2
BZX84C5V6W
KR3
5.6
5.2
6.0
5.0
40
480
1.0
1.0
2.0
-2.0
2.5
BZX84C6V2W
KR4
6.2
5.8
6.6
5.0
10
400
1.0
3.0
4.0
0.4
3.7
BZX84C6V8W
KR5
6.8
6.4
7.2
5.0
15
150
1.0
2.0
4.0
1.2
4.5
BZX84C7V5W
KR6
7.5
7.0
7.9
5.0
15
80
1.0
1.0
5.0
2.5
5.3
BZX84C8V2W
KR7
8.2
7.7
8.7
5.0
15
80
1.0
0.7
5.0
3.2
6.2
BZX84C9V1W
KR8
9.1
8.5
9.6
5.0
15
80
1.0
0.5
6.0
3.8
7.0
BZX84C10W
KR9
10
9.4
10.6
5.0
20
100
1.0
0.2
7.0
4.5
8.0
BZX84C11W
KP1
11
10.4
11.6
5.0
20
150
1.0
0.1
8.0
5.4
9.0
BZX84C12W
KP2
12
11.4
12.7
5.0
25
150
1.0
0.1
8.0
6.0
10.0
BZX84C13W
KP3
13
12.4
14.1
5.0
30
150
1.0
0.1
8.0
7.0
11.0
BZX84C15W
KP4
15
13.8
15.6
5.0
30
170
1.0
0.1
10.5
9.2
13.0
BZX84C16W
KP5
16
15.3
17.1
5.0
40
200
1.0
0.1
11.2
10.4
14.0
BZX84C18W
KP6
18
16.8
19.1
5.0
45
200
1.0
0.1
12.6
12.4
16.0
BZX84C20W
KP7
20
18.8
21.2
5.0
55
225
1.0
0.1
14.0
14.4
18.0
BZX84C22W
KP8
22
20.8
23.3
5.0
55
225
1.0
0.1
15.4
16.4
20.0
BZX84C24W
KP9
24
22.8
25.6
5.0
70
250
1.0
0.1
16.8
18.4
22.0
BZX84C27W
KPA
27
25.1
28.9
2.0
80
250
0.5
0.1
18.9
21.4
25.3
BZX84C30W
KPB
30.0
28.0
32.0
2.0
80
300
0.5
0.1
21.0
24.4
29.4
BZX84C33W
KPC
33.0
31.0
35.0
2.0
80
300
0.5
0.1
23.1
27.4
33.4
BZX84C36W
KPD
36.0
34.0
38.0
2.0
90
325
0.5
0.1
25.2
30.4
37.4
BZX84C39W
KPE
39.0
37.0
41.0
2.0
130
350
0.5
0.1
27.3
33.4
41.2
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300ms pulse width, 2% duty cycle.
3. f = 1KHz.
http://www.luguang.cn
mail:[email protected]
BZX84C SERIES
Zener Diode
Typical Characteristics
500
50
Tj = 25°C
C2V7
C3V3
400
IZ, ZENER CURRENT (mA)
Pd, POWER DISSIPATION (mW)
See Note 1
300
200
100
0
100
0
200
TA, AMBIENT TEMPERATURE, °C
Fig. 1. Power Derating Curve
30
Tj = 25°C
C3V9
40
C4V7
30
20
10
Test Current IZ
5.0mA
0
0
1
2
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
IZ, ZENER CURRENT (mA)
C12
C15
C18
0
Test current IZ
2mA
C22
10
Test current IZ
5mA
0
C27
C33
C36
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3, Zener Breakdown Characteristics
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C6V8
C8V2
C10
20
C5V6
40
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10