ASI ASI10657 Npn silicon rf power transistor Datasheet

TVV014
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .500 6L FLG
DESCRIPTION:
A
C
The ASI TVV014 is Designed for
2x ØN
FULL R
D
FEATURES:
•
•
• Omnigold™ Metalization System
B
60 V
VCE
35 V
PDISS
140 W
-65 C to +200 C
TJ
inches / mm
A
.150 / 3.43
.160 / 4.06
TSTG
θ JC
1.5 OC/W
CHARACTERISTICS
SYMBOL
.045 / 1.14
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
.725 / 18.42
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.285 / 7.24
M
.120 / 3.05
.135 / 3.43
ORDER CODE: ASI10657
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 10 mA
ICES
VE = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PGE
VCE = 25 V
IMD3
MAXIMUM
C
N
-65 OC to +150 OC
L
inches / mm
H
O
I
MINIMUM
I
O
J
DIM
B
10 A
VCB
M
K
H
MAXIMUM RATINGS
IC
E
.725/18,42
F
G
PREF = 16 W
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
V
60
V
4.0
V
10
f = 1.0 MHz
ICQ = 3.2 A
Vision = -8 dB
Side Band = -16 dB
f = 225 MHz
UNITS
13.5
mA
100
---
80
pF
14.5
Snd. = -7 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
5
dB
-55
dBc
REV. A
1/1
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