ISC BDW74C Isc silicon pnp darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 750(Min.)@ IC= -3A
·Complement to Type BDW73/A/B/C/D
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base
Voltage
Collector-Emitter
Voltage
VALUE
BDW74
-45
BDW74A
-60
BDW74B
-80
BDW74C
-100
BDW74D
-120
BDW74
-45
BDW74A
-60
BDW74B
-80
BDW74C
-100
BDW74D
-120
UNIT
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
-0.3
A
PC
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
B
TJ
Tstg
Junction Temperature
Storage Temperature Range
2
W
80
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.56
℃/W
Rth j-c
Thermal Resistance, Junction to Case
62.5
℃/W
isc Website:www.iscsemi.cn
BDW74/A/B/C/D
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
BDW74/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
PARAMETER
Collector-Emitter
Breakdown Voltage
CONDITIONS
MIN
BDW74
-45
BDW74A
-60
BDW74B
IC= -30mA; IB= 0
TYP.
MAX
V
-80
BDW74C
-100
BDW74D
-120
UNIT
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -12mA
-2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -8A; IB= -80mA
-4.0
V
Base-Emitter On Voltage
IC= -3A; VCE= -3V
-2.5
V
C-E Diode Forward Voltage
IF= -8A
-3.5
V
-0.5
mA
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TJ= 150℃
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TJ= 150℃
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TJ= 150℃
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TJ= 150℃
VCB= -120V; IE= 0
VCB= -120V; IE= 0; TJ= 150℃
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
mA
-2.0
mA
VBE(on)
VECF
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
BDW74A
VCE= -30V; IB= 0
BDW74B
VCE= -40V; IB= 0
BDW74C
VCE= -50V; IB= 0
BDW74D
VCE= -60V; IB= 0
BDW74A
Collector Cutoff Current
B
BDW74
BDW74
ICBO
B
BDW74B
BDW74C
BDW74D
B
B
B
B
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
750
hFE-2
DC Current Gain
IC= -8A; VCE= -3V
100
20000
Switching times
ton
Turn-on Time
toff
Turn-off Time
isc Website:www.iscsemi.cn
IC= -3A; IB1= -IB2= -12mA;
VBE(off)= 3.5V, RL=10Ω
2
1.0
μs
5.0
μs
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