BSI BH616UV1611DIP70 Ultra low power/high speed cmos sram 1m x 16 bit / 2m x 8-bit Datasheet

Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit / 2M x 8-bit
BH616UV1611
Pb-Free and Green package materials are compliant to RoHS
n FEATURES
n DESCRIPTION
Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V
Ÿ Ultra low power consumption :
VCC = 3.6V
Operation current : 10mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 5.0uA (Typ.) at 3.0V/25OC
VCC = 1.2V
Data retention current : 1.5uA(Typ.) at 25OC
Ÿ High speed access time :
-55
55ns (Max.) at VCC=1.65~3.6V
-70
70ns (Max.) at VCC=1.65~3.6V
Ÿ Automatic power down when chip is deselected
Ÿ Easy expansion with CE1, CE2 and OE options
Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible
Ÿ Fully static operation, no clock, no refresh
Ÿ Data retention supply voltage as low as 1.0V
The BH616UV1611 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.0V/25OC and maximum access time of 55ns at
1.65V/85OC.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1611 is available in DICE form, JEDEC standard
48-pin TSOP-I and 48-ball BGA package.
n POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
STANDBY
OPERATING
TEMPERATURE
Operating
(ICCSB1, Max)
VCC=3.6V
PKG TYPE
(ICC, Max)
VCC=1.8V
1MHz
VCC=3.6V
10MHz
fMax.
VCC=1.8V
10MHz
1MHz
fMax.
BH616UV1611DI
BH616UV1611BI
DICE
Industrial
-40OC to +85OC
30uA
25uA
2mA
6mA
10mA
1.5mA
5mA
BH616UV1611TI
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
BGA-48-0810
TSOP I-48
n BLOCK DIAGRAM
n PIN CONFIGURATIONS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
8mA
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
BH616UV1611TI
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CE2
B
DQ8
UB
A3
A4
CE1
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
VSS
DQ11
A17
A7
DQ3
VCC
E
VCC
DQ12
NC
A16
DQ4
VSS
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
DQ15
A19
A12
A13
WE
DQ7
H
A18
A8
A9
A10
A11
NC
A16
BYTE
VSS
DQ15/A20
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE1
A0
A15
A14
A13
A12
A11
A10
A9
A8
A19
A18
Address
1024
10
Input
Row
Buffer
Decoder
Memory Array
1024 x 16384
16384
DQ0
.
.
.
.
.
.
DQ15
CE2, CE1
WE
OE
UB
LB
.
.
.
.
.
.
16
16
16
Data
Input
Buffer
Data
Output
Buffer
Column I/O
Write Driver
Sense Amp
16
1024
Column Decoder
10
Control
Address Input Buffer
A16 A0 A17 A7 A6 A5 A4 A3 A2 A1
VCC
VSS
48-ball BGA top view
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
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BH616UV1611
n PIN DESCRIPTIONS
Name
Function
A0 to A19 Address Input (word mode) These 20 address inputs select one of the 1,024K x 16 bit in the RAM, if BYTE is HIGH
A0 to A20 Address Input (byte mode) These 21 address inputs select one of the 2,048K x 8 bit in the RAM, If BYTE is LOW
(TSOP only)
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
CE1 Chip Enable 1 Input
data read from or write to the device. If either chip enable is not active, the device is
CE2 Chip Enable 2 Input
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
LB and UB Data Byte Control Input
Lower byte and upper byte data input/output control pins.
BYTE Byte Enable Input (TSOP only)
This input selects the organization of the SRAM. 1,024K x 16-bit configuration is
selected if BYTE is HIGH. 2,048K x 8-bit configuration is selected if BYTE is LOW
DQ0-DQ15 Data Input/Output
Ports
VCC
16 bi-directional ports are used to read data from or write data into the RAM.
VSS
Ground
R0201-BH616UV1611
Power Supply
2
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Otc.
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BH616UV1611
n TRUTH TABLE
Byte Mode (TSOP only)
CE1
CE2
WE
OE
LB
UB
Chip
De-selected
(Power Down)
H
X
X
X
X
X
L
High Z
High Z
High Z
ICCSB, ICCSB1
X
L
X
X
X
X
L
High Z
High Z
High Z
ICCSB, ICCSB1
L
H
H
H
X
X
L
High Z
High Z
High Z
ICC
L
H
H
L
X
X
L
DOUT
High Z
A20
ICC
L
H
L
X
X
X
L
DIN
X
A20
ICC
CE1
CE2
WE
OE
LB
UB
H
X
X
X
X
X
H
High Z
High Z
High Z
ICCSB, ICCSB1
X
L
X
X
X
X
H
High Z
High Z
High Z
ICCSB, ICCSB1
X
X
X
X
H
H
H
High Z
High Z
High Z
ICCSB, ICCSB1
L
H
H
H
X
X
H
High Z
High Z
High Z
ICC
L
L
H
DOUT
DOUT
DOUT
ICC
H
L
H
High Z
DOUT
DOUT
ICC
L
H
H
DOUT
High Z
High Z
ICC
L
L
H
DIN
DIN
DIN
ICC
H
L
H
X
DIN
DIN
ICC
L
H
H
DIN
X
X
ICC
Output
Disabled
Read
(byte mode)
Write
(byte mode)
BYTE DQ0~DQ7 DQ8~DQ14 DQ15
VCC
CURRENT
MODE
Word Mode
MODE
Chip
De-selected
(Power Down)
Output
Disabled
Read
(word mode)
Write
(word mode)
L
L
H
H
H
L
L
X
BYTE DQ0~DQ7 DQ8~DQ14 DQ15
VCC
CURRENT
NOTES: H means VIH; L means VIL; X means don’t care (Must be VIH or VIL state)
48BGA ignore BYTE condition.
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BH616UV1611
(1)
n ABSOLUTE MAXIMUM RATINGS
RATING
UNITS
RANG
VCC
Terminal Voltage with
Respect to GND
Temperature Under
Bias
AMBIENT
TEMPERATURE
-0.5(2) to 4.6V
V
Industrial
-40OC to + 85OC
1.65V ~ 3.6V
-40 to +125
O
C
Storage Temperature
-60 to +150
O
C
SYMBOL
VTERM
TBIAS
TSTG
n OPERATING RANGE
PARAMETER
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
n CAPACITANCE
(1)
O
(TA = 25 C, f = 1.0MHz)
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
Input
Capacitance
Input/Output
Capacitance
CIN
1. Stresses greater than those listed under ABSOLUTE
MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. –2.0V in case of AC pulse width less than 30 ns
CIO
VIN = 0V
6
pF
VI/O = 0V
8
pF
1. This parameter is guaranteed and not 100% tested.
O
O
n DC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
VIL
Input Low Voltage
TEST CONDITIONS
VCC=1.8V
MIN.
TYP.(1)
MAX.
UNITS
1.65
--
3.6
V
-0.3(2)
--
VIH
IIL
VCC=1.8V
1.4
VCC=3.6V
2.2
Input High Voltage
Input Leakage Current
VIN = 0V to VCC,
0.4
V
0.8
VCC=3.6V
--
VCC+0.3(3)
V
--
--
1
uA
--
--
1
uA
--
--
CE1 = VIH or CE2 = VIL
ILO
Output Leakage Current
VOL
Output Low Voltage
VOH
ICC
ICC1
ICCSB
ICCSB1
VI/O = 0V to V CC,
CE1 = VIH or CE2 = VIL or OE = VIH or
UB = LB = VIH
V CC = Max, IOL = 0.2mA
VCC=1.8V
V CC = Max, IOL = 2.0mA
VCC=3.6V
V CC = Min, IOH = -0.1mA
VCC=1.8V
VCC-0.2
V CC = Min, IOH = -1.0mA
VCC=3.6V
2.4
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
VCC=1.8V
Operating Power Supply
Current
CE1 = VIL and CE2 = VIH,
VCC=1.8V
IDQ = 0mA, f = 1MHz
VCC=3.6V
CE1 = VIH, or CE2 = VIL,
VCC=1.8V
IDQ = 0mA
VCC=3.6V
CE1≧VCC-0.2V or CE2≦0.2V,
VCC=1.8V
VIN≧V CC-0.2V or VIN≦0.2V
VCC=3.6V
Output High Voltage
Standby Current – TTL
Standby Current – CMOS
IDQ = 0mA, f =
FMAX(4)
0.2
V
0.4
-VCC=3.6V
--
--
--
--
6
8
8
10
1.0
1.5
1.5
2.0
--
V
mA
0.5
mA
mA
1.0
--
4.0
25
5.0(5)
30
uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. VCC=3.0V
R0201-BH616UV1611
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BH616UV1611
O
O
n DATA RETENTION CHARACTERISTICS (TA = -40 C to +85 C)
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
CE1≧VCC-0.2V or CE2≦0.2V,
MIN.
TYP. (1)
MAX.
UNITS
1.0
--
--
V
--
1.5
15
uA
0
--
--
ns
tRC (2)
--
--
ns
VIN≧VCC-0.2V or VIN≦0.2V
CE1≧VCC-0.2V or CE2≦0.2V,
VCC=1.2V
VIN≧VCC-0.2V or VIN≦0.2V
See Retention Waveform
tR
Operation Recovery Time
1. Typical characteristics are at TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
Data Retention Mode
VCC
VDR≧1.0V
VCC
tCDR
tR
CE1≧VCC - 0.2V
VIH
CE1
VCC
VIH
n LOW VCC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
Data Retention Mode
VDR≧1.0V
VCC
VCC
tCDR
VCC
tR
CE2≦0.2V
CE2
VIL
VIL
n AC TEST CONDITIONS
n KEY TO SWITCHING WAVEFORMS
(Test Load and Input/Output Reference)
Input Pulse Levels
VCC / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
tCLZ1, tCLZ2, tBE, tOLZ, tCHZ1,
tCHZ2, tBDO, tOHZ, tWHZ, tOW
Output Load
WAVEFORM
0.5Vcc
CL = 5pF+1TTL
Others
Output
CL(1)
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM “H” TO “L”
WILL BE CHANGE
FROM “H” TO “L”
MAY CHANGE
FROM “L” TO “H”
WILL BE CHANGE
FROM “L” TO “H”
DON’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
CL = 30pF+1TTL
ALL INPUT PULSES
1 TTL
INPUTS
VCC
GND
90%
10%
→ ←
Rise Time:
1V/ns
90%
10%
→ ←
Fall Time:
1V/ns
1. Including jig and scope capacitance.
R0201-BH616UV1611
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BH616UV1611
n BYTE FUNCTION
PARAMETER
NAME
PARAMETER
MIN.
MAX.
UNITS
tBS
BYTE Setup Time
5
--
ms
tBR
BYTE Recovery Time
5
--
ms
CE2
CE1
tBS
tBR
BYTE
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
CYCLE TIME : 70ns
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tRC
Read Cycle Time
55
--
--
70
--
--
ns
tAVQX
tAA
Address Access Time
--
--
55
--
--
70
ns
tE1LQV
tACS1
Chip Select Access Time
(CE1)
--
--
55
--
--
70
ns
tE2LQV
tACS2
Chip Select Access Time
(CE2)
--
--
55
--
--
70
ns
tBLQV
tBA
Data Byte Control Access Time
(LB, UB)
--
--
55
--
--
70
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
25
--
--
35
ns
tE1LQX
tCLZ1
Chip Select to Output Low Z
(CE1)
10
--
--
10
--
--
ns
tE2LQX
tCLZ2
Chip Select to Output Low Z
(CE2)
10
--
--
10
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z
(LB, UB)
10
--
--
10
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
5
--
--
5
--
--
ns
tE1HQZ
tCHZ1
Chip Deselect to Output High Z
(CE1)
--
--
25
--
--
35
ns
tE2HQZ
tCHZ2
Chip Deselect to Output High Z
(CE2)
--
--
25
--
--
35
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB)
--
--
25
--
--
35
ns
tGHQZ
tOHZ
Output Disable to Output High Z
--
--
25
--
--
30
ns
tAVQX
tOH
Data Hold from Address Change
10
--
--
10
--
--
ns
R0201-BH616UV1611
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BH616UV1611
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
READ CYCLE 2
(1,3,4)
CE1
tACS1
CE2
(6)
tACS2
tCLZ
tCHZ
(5,6)
(5, 6)
DOUT
READ CYCLE 3
(1, 4)
tRC
ADDRESS
tAA
OE
tOH
tOE
tOLZ
CE1
(5)
tACS1
tCLZ1
CE2
(5)
tOHZ
tCHZ
(5)
(1,5)
tACS2
tCLZ2
tCHZ2
(2,5)
tBA
LB, UB
tBE
tBDO
DOUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
R0201-BH616UV1611
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BH616UV1611
O
O
n AC ELECTRICAL CHARACTERISTICS (TA = -40 C to +85 C)
WRITE CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
CYCLE TIME : 55ns
CYCLE TIME : 70ns
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
40
--
--
60
--
--
ns
tELWH
tCW
Chip Select to End of Write
40
--
--
60
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
40
--
--
60
--
--
ns
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
ns
tWHAX
tWR1
Write Recovery Time
(CE1, WE)
0
--
--
0
--
--
ns
tE2LAX
tWR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
20
--
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
(LB, UB)
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
ADDRESS
OE
CE1
(5)
CE2
(5)
tCW
(11)
tCW
(11)
tWR1
(3)
tWR2
tBW
(3)
LB, UB
tAW
WE
tWP
tAS
tOHZ
(2)
(4,10)
DOUT
tDH
tDW
DIN
R0201-BH616UV1611
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BH616UV1611
WRITE CYCLE 2
(1,6)
tWC
ADDRESS
(5)
CE1
CE2
tCW
(11)
tCW
(11)
(5)
tBW
(12)
LB, UB
tAW
tWP
WE
tAS
tWHZ
tWR
(3)
(2)
(4,10)
tOW
(7)
(8)
DOUT
tDW
tDH
(8,9)
DIN
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE
low. All signals must be active to initiate a write and any one signal can terminate a write by
going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
3. tWR is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
transitions or after the WE transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data
input signals of opposite phase to the outputs must not be applied to them.
10. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11. tCW is measured from the later of CE1 going low or CE2 going high to the end of write.
R0201-BH616UV1611
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Revision 1.3
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BH616UV1611
n ORDERING INFORMATION
BH616UV1611
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
I: -40oC ~ +85oC
PACKAGE
D: Dice
B: BGA-48-0810
T: TSOP I-48
Note:
Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
1.2 Max.
0.25 ± 0.05
n PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
SIDE VIEW
D
0.1
D1
N
D
E
D1
E1
e
48
10.0
8.0
5.25
3.75
0.75
0.35 ± 0.05
E ± 0.1
E1
e
SOLDER BALL
VIEW A
48 mini-BGA (8 x 10mm)
R0201-BH616UV1611
10
Revision 1.3
Otc.
2006
BH616UV1611
n PACKAGE DIMENSIONS
TSOP I-48 Pin (12mm x 20mm)
R0201-BH616UV1611
11
Revision 1.3
Otc.
2006
BH616UV1611
n Revision History
Revision No.
History
Draft Date
Remark
1.0
Initial Production Version
May 10,2006
Initial
1.1
Change I-grade operation temperature range
- from –25OC to –40OC
May 25, 2006
1.2
Add Part Number for 70ns
July 21, 2006
1.3
Add DICE form and 48 TSOP-I package type
Change BGA package dimension for single chip solution
- form 6x8 mm to 8x10mm
Improve Spec.
- ICC(MAX.) from 12mA to 10mA for VCC=3.6V
- ICCsb1(TYP.) from 5.0uA to 4.0uA for VCC=1.8V
- ICCDR(TYP.) from 2.5uA to 1.5uA for VCC=1.2V
- tOE(MIN.) from 30ns to 25ns
- tAW(MIN.) from 45ns to 40ns
- tCW(MIN.) from 45ns to 40ns
- tBW(MIN.) from 45ns to 40ns
Otc 22, 2006
R0201-BH616UV1611
12
Revision 1.3
Otc.
2006
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