BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode SOT-23 Collector Base F A Emitter Features Low power loss, high current capability, low VF B Surface device type mounting E Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate C G D Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 1.50 1.70 0.059 0.067 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 3.55 3.85 0.140 0.152 C 0.45 0.65 0.018 0.026 High temperature soldering guaranteed: 260°C/10s D 2.60 2.80 0.102 0.11 Weight : 0.008gram (approximately) E 1.05 1.25 0.041 0.049 F 0.08 0.15 0.003 0.006 G 0.02 REF 0.50 REF Ordering Information Part No. Package Packing BC817-16/-25/-40 RF SOT-23 3Kpcs/7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Power Dissipation BC817-16 BC817-25 BC817-40 Units PD 300 mW Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V IC 500 mA RθJA 388 °C/W TJ, TSTG -55 to + 150 °C Collector Current Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Symbol BC817-16 BC817-25 BC817-40 Units Collector-Base Breakdown Voltage IC= 10μA IE= 0 V(BR)CBO 50 V Collector-Emitter Breakdown Voltage IC= 10mA IB= 0 V(BR)CEO 45 V Emitter-Base Breakdown Voltage IE= 1μA IC= 0 V(BR)EBO 5 V Collector Cut-off Current VCB= 45V IE= 0 ICBO 0.1 μA Emitter Cut-offCurrent VEB= 4V IC= 0 IEBO 0.1 μA Collector-Emitter saturation voltage IC= 500mA IB= 50mA VCE(sat) 0.7 V IC= 500mA IB= 50mA VBE(sat) 1.2 V fT 100 MHz Base-Emitter saturation voltage Transition frequency Junction Capacitance DC current gain DC current gain VCE= 5V IC= 10mA f= 100MHz VR=0V, f=1.0MHz VCE= 1V IC= 100mA VCE= 1V IC= 100mA CJ hFE hFE pF 10 100 - 600 >40 >40 >40 100-250 160-400 250-600 Notes:1. Valid provided that electrodes are kept at ambient temperature Version : C09 BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode Rating and Sharacteristic Curves FIG 2 Collector-Emitter Saturation Voltage vs Collector Current FIG 1 Typical Pulsed Current Gain vs Collector Current 10 Ic, Collector Current (mA) Ic, Collector Current (A) 10 o 25 C 1 0.1 0.01 VCE=5 0.001 1 o 25 C 0.1 0.01 0 100 200 300 400 500 0 0.1 hFE 0.4 0.5 0.6 FIG 4 Base-Emitter on Voltage vs Collector Current 1 Ic, Collector Current (A) 1000 Ic, Collector Current (mA) 0.3 VCE(sat), Collector-Emitter Voltage (V) FIG 3 Base-Emitter Saturation Voltage vs Collector Current 25oC 100 10 1 0 0.2 Ambient Temperature (°C) 0.4 0.6 0.8 1 25o 0.1 0.01 0.001 1.2 1.4 VBE(sat),Base-Emitter Voltage (V) Collector-Base Capactiance (pF) 0.2 0 0.2 0.4 Reverse Voltage (V) 0.6 0.8 1 1.2 1.4 VBE(sat),Base-Emitter on Voltage (V) FIG 5 Collector-Base Capacitance vs Collector-Base Voltage 40 30 20 10 0 0 4 8 12 16 20 24 28 VCB,Collector-Base Voltage (V) Version : C09