LINER LT5515 1.5ghz to 2.5ghz direct conversion quadrature demodulator Datasheet

LT5515
1.5GHz to 2.5GHz
Direct Conversion
Quadrature Demodulator
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FEATURES
DESCRIPTIO
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The LT ®5515 is a 1.5GHz to 2.5GHz direct conversion
quadrature demodulator optimized for high linearity receiver applications. It is suitable for communications
receivers where an RF signal is directly converted into I
and Q baseband signals with bandwidth up to 260MHz.
The LT5515 incorporates balanced I and Q mixers, LO
buffer amplifiers and a precision, high frequency quadrature generator.
■
■
■
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■
■
■
■
Frequency Range: 1.5GHz to 2.5GHz
High IIP3: 20dBm at 1.9GHz
High IIP2: 51dBm at 1.9GHz
Noise Figure: 16.8dB at 1.9GHz
Conversion Gain: –0.7dB at 1.9GHz
I/Q Gain Mismatch: 0.3dB
I/Q Phase Mismatch: 1°
Shutdown Mode
16-Lead QFN 4mm × 4mm Package
with Exposed Pad
In an RF receiver, the high linearity of the LT5515 provides
excellent spur-free dynamic range, even with fixed gain
front end amplification. This direct conversion receiver
can eliminate the need for intermediate frequency (IF)
signal processing, as well as the corresponding requirements for image filtering and IF filtering. Channel filtering
can be performed directly at the outputs of the I and Q
channels. These outputs can interface directly to channelselect filters (LPFs) or to a baseband amplifier.
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APPLICATIO S
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Cellular/PCS/UMTS Infrastructure
High Linearity Direct Conversion I/Q Receiver
High Linearity I/Q Demodulator
RF Power Amplifier Linearization
LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
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TYPICAL APPLICATIO
I/Q Output Power, IM2, IM3
vs RF Input Power
5V
BPF
LNA
VCC
RF +
LT5515
IOUT+
20
LPF
VGA
0°
RF –
IOUT–
DSP
LO INPUT
LO +
QOUT+
0°/90°
LO –
ENABLE
LPF
VGA
90°
QOUT
–
EN
POUT, IM2, IM3 (dBm/TONE)
BPF
0
POUT
– 20
IM3
– 40
IM2
– 60
TA = 25°C
PLO = –5dBm
fLO = 1901MHz
fRF1 = 1899.9MHz
fRF2 = 1900.1MHz
– 80
5515 F01
–100
–16
–12
–8
–4
0
RF INPUT POWER (dBm)
4
8
5515 • TA01
Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
NUMBER
QOUT –
QOUT +
IOUT +
IOUT –
TOP VIEW
Power Supply Voltage ............................................ 5.5V
Enable Voltage ...................................................... 0, VCC
LO + to LO – Differential Voltage ............................... ±2V
(+10dBm Equivalent)
+
–
RF to RF Differential Voltage ................................ ±2V
(+10dBm Equivalent)
Operating Ambient Temperature ..............–40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Maximum Junction Temperature .......................... 125°C
16 15 14 13
GND 1
12 VCC
RF + 2
11 LO –
RF
–
17
3
LT5515EUF
10 LO +
GND 4
6
7
8
VCC
VCM
EN
VCC
9
5
VCC
UF PART
MARKING
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
EXPOSED PAD (PIN 17) IS GND,
MUST BE SOLDERED TO PCB
TJMAX = 125°C, θJA = 38°C/W
5515
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
TA = 25°C. VCC = 5V, fRF1 = 1899.9MHz, fRF2 = 1900.1MHz,
fLO = 1901MHz, PLO = –5dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Frequency Range
1.5 to 2.5
GHz
LO Power
–10 to 0
dBm
Conversion Gain
Voltage Gain, Load Impedance = 1k
Noise Figure
–3
–0.7
dB
16.8
dB
Input 3rd Order Intercept
2-Tone, –10dBm/Tone, ∆f = 200kHz
20
Input 2nd Order Intercept
2-Tone, –10dBm/Tone, ∆f = 200kHz
51
dBm
9
dBm
260
MHz
Input 1dB Compression
Baseband Bandwidth
I/Q Gain Mismatch
(Note 4)
0.3
I/Q Phase Mismatch
(Note 4)
1
Output Impedance
Differential
dBm
0.7
dB
deg
120
Ω
LO to RF Leakage
– 46
dBm
RF to LO Isolation
46
dB
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LT5515
DC ELECTRICAL CHARACTERISTICS
PARAMETER
TA = 25°C. VCC = 5V unless otherwise noted.
CONDITIONS
Supply Voltage
TYP
4
Supply Current
Shutdown Current
MIN
95
125
EN = Low
Turn-On Time
Turn-Off Time
EN = High (On)
MAX
UNITS
5.25
V
160
mA
20
µA
120
ns
650
ns
1.6
V
EN = Low (Off)
EN Input Current
VENABLE = 5V
2
Output DC Offset Voltage
(⏐IOUT+ – IOUT–⏐, ⏐QOUT+ – QOUT–⏐)
fLO = 1901MHz, PLO = –5dBm
4
Output DC Offset Variation vs Temperature
– 40°C to 85°C
30
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Tests are performed as shown in the configuration of Figure 2 with
R1 = 8.2Ω, unless otherwise noted.
1.3
V
25
mV
µA
µV/°C
Note 3: Specifications over the – 40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
control.
Note 4: Measured at PRF = –5dBm and output frequency = 1MHz.
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 1.9GHz operation as shown in Figure 2)
Conv Gain, NF, IIP3 vs
RF Input Frequency
Supply Current vs Supply Voltage
170
IIP2 vs RF Input Frequency
25
70
PLO = –5dBm
TA = 25°C
VCC = 5V
IIP3
GAIN (dB), NF (dB), IIP3 (dBm)
TA = 85°C
130
TA = 25°C
110
TA = – 40°C
90
60
NF
15
10
IIP2 (dBm)
150
SUPPLY CURRENT (mA)
20
PLO = –5dBm
TA = 25°C
VCC = 5V
50
40
5
30
0
CONV GAIN
–5
1.7
5.5
4.5
5.0
SUPPLY VOLTAGE (V)
1.8
2.3
2.2
1.9 2.0 2.1
RF INPUT FREQUENCY (GHz)
5515 ¥ G01
GAIN MISMATCH (dB)
–20
TA = – 40°C
–40
TA = 25°C
–60
TA = 85°C
6
fBB = 1MHz
PLO = –5dBm
VCC = 5V
4
TA = 85°C
0.6
TA = 25°C
TA = – 40°C
0.2
– 0.2
–80
–100
–16
–12
–8
–4
0
RF INPUT POWER (dBm)
4
8
– 0.6
1.7
1.8
1.9 2.0 2.1
2.2 2.3
RF INPUT FREQUENCY (GHz)
5515 ¥ G04
12
8
4
fRF = 1.7GHz
fRF = 1.9GHz
16
TA = 25°C
14
TA = – 40°C
0
–4
4.0
5.5
5515 ¥ G07
12
–12
–10
–2
–8
–6
–4
LO INPUT POWER (dBm)
IIP3
TA = 25°C
2.4
0
5515 ¥ G08
TA = 85°C
TA = – 40°C
16
12
8
fLO = 1901MHz
VCC = 5V
4
CONV GAIN
0
TA = 25°C
VCC = 5V
TA = 85°C
4.5
5.0
SUPPLY VOLTAGE (V)
2.3
2.2
1.9 2.0 2.1
RF INPUT FREQUENCY (GHz)
20
fRF = 2.1GHz
18
CONV GAIN
1.8
Conv Gain, IIP3 vs
LO Input Power
24
TA = – 40°C
fLO = 1901MHz
PLO = –5dBm
TA = – 40°C
5515 ¥ G06
NF vs LO Input Power
NF (dB)
CONV GAIN (dB), IIP3 (dBm)
TA = 25°C
16
–2
TA = 85°C
20
TA = 25°C
0
–6
1.7
2.4
20
IIP3
TA = 85°C
2
5515 ¥ G05
Conv Gain, IIP3 vs
Supply Voltage
24
fBB = 1MHz
PLO = –5dBm
–4
CONV GAIN (dB), IIP3 (dBm)
POUT, IM3 (dBm/TONE)
1.0
2.4
I/Q Phase Mismatch vs
RF Input Frequency
1.4
OUTPUT POWER
IM3
2.3
1.9 2.0 2.1 2.2
RF INPUT FREQUENCY (GHz)
5515 ¥ G03
I/Q Gain Mismatch vs
RF Input Frequency
20
fLO = 1901MHz
VCC = 5V
1.8
5515 ¥ G02
I/Q Output Power, IM3 vs
RF Input Power
0
20
1.7
2.4
PHASE MISMATCH (DEG)
70
4.0
–4
–12
TA = 25°C
TA = – 40°C
TA = 85°C
–10
–8
–6
–4
–2
LO INPUT POWER (dBm)
0
5515 ¥ G09
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 1.9GHz operation as shown in Figure 2)
LO-RF Leakage vs
LO Input Power
IIP2 vs LO Input Power
70
–40
60
–45
TA = – 40°C
50
TA = 25°C
45
TA = 85°C
40
TA = 25°C
VCC = 5V
70
RF-LO ISOLATION (dB)
55
80
TA = 25°C
VCC = 5V
LO-RF LEAKAGE (dBm)
IIP2 (dBm)
fLO = 1901MHz
65 VCC = 5V
RF-LO Isolation vs
RF Input Power
fRF = 1.9GHz
fRF = 2.2GHz
–50
fRF = 1.7GHz
fRF = 2.4GHz
–55
60
fRF = 2.4GHz
50
fRF = 2.2GHz
fRF = 1.9GHz
40
fRF = 1.7GHz
30
35
30
–10
–8
–6
–2
–4
LO INPUT POWER (dBm)
–60
–12
0
–10
20
–15
0
–8
–6
–4
–2
LO INPUT POWER (dBm)
–10
5515 ¥ G11
5515 ¥ G10
RF, LO Port Return Loss vs
Frequency
5515 ¥ G12
Conv Gain vs
Baseband Frequency
Conv Gain, NF, IIP3 vs R1
2
0
25
fLO = 1901MHz
PLO = –5dBm
TA = 25°C
VCC = 5V
IIP3
CONV GAIN (dB)
RF
LO
–15
–20
1.5
TA = 25°C
TA = 85°C
–2
–4
–6
–8
2.5
2.0
FREQUENCY (GHz)
3.0
fLO = 1.9GHz
VCC = 5V
10
1
100
BASEBAND FREQUENCY (MHz)
0.1
1000
5515 ¥ G14
5515 ¥ G13
20
NF
15
10
5
CONV GAIN
0
–5
2
3
4
5
6
7
R1 (Ω)
8
9
10
5515 ¥ G15
Supply Current, IIP2 vs R1
150
SUPPLY CURRENT (mA), IIP2 (dBm)
RETURN LOSS (dB)
–10
GAIN (dB), NF (dB), IIP3 (dBm)
TA = – 40°C
0
–5
10
–5
0
5
RF INPUT POWER (dBm)
130
SUPPLY CURRENT
110
fLO = 1901MHz
PLO = –5dBm
90
TA = 25°C
VCC = 5V
70
IIP2
50
30
2
3
4
5
6
7
R1 (Ω)
8
9
10
5515 ¥ G16
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LT5515
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PI FU CTIO S
GND (Pins 1, 4): Ground Pin.
RF +, RF – (Pins 2, 3): Differential RF Input Pins. These
pins are internally biased to 1.54V. They must be driven
with a differential signal. An external matching network is
required for impedance transformation.
VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
VCM (Pin 6): Common Mode and DC Return for the I-Mixer
and Q-Mixer. An external resistor must be connected
between this pin and ground to set the DC bias current of
the I/Q demodulator.
EN (Pin 7): Enable Pin. When the input voltage is higher
than 1.6V, the circuit is completely turned on. When the
input voltage is less than 1.3V, the circuit is turned off.
LO +, LO – (Pins 10, 11): Differential Local Oscillator Input
Pins. These pins are internally biased to 2.44V. They can
be driven single-ended by connecting one to an AC ground
through a 1000pF capacitor. However, differential input
drive is recommended to minimize LO feedthrough to the
RF input pins.
QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output
Pins of the Q-Channel. The internal DC bias voltage is VCC
–0.85V for each pin.
IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output
Pins of the I-Channel. The internal DC bias voltage is VCC
–0.85V for each pin.
GROUND (Pin 17, Backside Contact): Ground Return for
the Entire IC. This pin must be soldered to the printed
circuit board ground plane.
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BLOCK DIAGRA
VCC
VCC
VCC
VCC
5
8
9
12
I-MIXER
LPF
16 IOUT+
15 IOUT–
RF AMP
RF + 2
LO BUFFERS
0°/90°
RF – 3
LPF
14 QOUT+
VCM 6
13 QOUT–
Q-MIXER
BIAS
7
EN
1
4
GND GND
17
10
11
LO +
LO –
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LT5515
TEST CIRCUITS
J3
IOUT–
J5
QOUT+
C18
(OPT)
C21
(OPT)
J4
J6
RF
L1
10nH
4
RF +
RF
L2
(OPT)
LO +
GND
VCC
C5
1nF
VCC
C1
100pF
LO
VCC
LO –
LT5515
–
EN
C17
100pF
GND
VCM
3
6
1
VCC
2
T2
LDB311G9005C-300 J2
QOUT –
IOUT +
T1
J1 LDB311G9020C-452
QOUT–
C20
(OPT)
QOUT +
C19
(OPT)
IOUT –
IOUT+
6
1
2
4
3
C2
100pF
C16
100pF
VCC
R3 1k
EN
C7
1nF
REFERENCE
DESIGNATION
C1, C2, C16, C17
C5, C6, C7
C3
C4
L1
R1
R2
R3
T1
T2
R1
4.3Ω
VALUE
100pF
1nF
0.1µF
2.2µF
10nH
4.3Ω
100k
1k
1:4
1:1
R2
100k
SIZE
0402
0402
0402
3216
0402
0402
0402
0402
C6
1nF
C3
0.1µF
C4
2.2µF
PART NUMBER
AVX 04025C101JAT
AVX 04025C102JAT
AVX 0402ZD104KAT
AVX TPSA225M010R1800
Murata LQP15M
Murata LDB311G9020C-452
Murata LDB311G9005C-300
5515 F02
Figure 2. Evaluation Circuit Schematic for 1900MHz PCS/UMTS Application
Figure 3. Topside of Evaluation Board
Figure 4. Bottom Side of Evaluation Board
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LT5515
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APPLICATIO S I FOR ATIO
The LT5515 is a direct I/Q demodulator targeting high
linearity receiver applications, including wireless infrastructure. It consists of an RF amplifier, I/Q mixers, a
quadrature LO carrier generator and bias circuitry.
The RF+ and RF– inputs (Pins 2, 3) are internally biased at
1.54V. These two pins should be DC blocked when connected to ground or other matching components. The RF
input equivalent circuit is shown in Figure 5.
The RF signal is applied to the inputs of the RF amplifier
and is then demodulated into I/Q baseband signals using
quadrature LO signals. The quadrature LO signals are
internally generated by precision 90° phase shifters. The
demodulated I/Q signals are lowpass filtered internally
with a –3dB bandwidth of 260MHz. The differential outputs of the I-channel and Q-channel are well matched in
amplitude; their phases are 90° apart.
A 4.3Ω resistor (R1) is connected to Pin 6 (VCM) to set the
optimum DC current for I/Q mixer linearity. The trade-off
of the NF and IIP3 as a function of R1 is shown in the
“Typical Performance Characteristics”. When a smaller
R1 is used for better linearity, the total supply current will
increase. A 5V ±5% power supply is recommended to
assure high linearity performance.
LO Input Port
RF Input Port
Differential drive is highly recommended for the RF inputs
to minimize the LO feedthrough to the RF port and to
maximize gain. (See Figure 2.) A 1:4 transformer is used
on the demonstration board for wider bandwidth matching. To assure good NF and maximize the demodulator
gain, a low loss transformer is employed. Shunt inductor
L1, with high resonance frequency, is required for proper
impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete
L-C circuits to produce the required balanced waveforms
at the RF + and RF – inputs.The differential impedance of
the RF inputs is listed in Table 1.
Table 1. RF Input Differential Impedance
FREQUENCY
(GHz)
DIFFERENTIAL INPUT
DIFFERENTIAL S11
IMPEDANCE (Ω)
MAG
ANGLE(°)
1.5
115.7-j132.7
0.698
–24.9
1.6
111.7-j128.1
0.689
–25.9
1.7
108.1-j123.7
0.681
–26.8
1.8
104.8-j120.2
0.674
–27.7
1.9
101.7-j116.9
0.667
–28.5
2.0
98.8-j113.8
0.661
–29.4
2.1
96.0-j111.1
0.655
–30.2
2.2
93.3-j108.7
0.650
–31.1
2.3
90.7-j106.2
0.645
–32.0
2.4
88.3-j104.2
0.641
–32.8
2.5
85.9-j102.2
0.637
–33.7
The LO inputs (Pins 10,11) should be driven differentially
to minimize LO feedthrough to the RF port. This can be
accomplished by means of a single-ended to differential
conversion as shown in Figure 2. L4, the 12nH shunt
inductor, serves to tune out the capacitive component of
the LO differential input. The resonance frequency of the
inductor should be greater than the operating frequency.
A 1:2 transformer is used on the demo board to match the
LO port to a 50Ω source. Figure 6 shows the LO input
equivalent circuit and the associated matching network.
Single-ended to differential conversion at the LO inputs
can also be implemented using a discrete L-C circuit to
produce a balanced waveform without a transformer.
An alternative solution is a simple single-ended termination. However, the LO feedthrough to RF may be degraded.
Either LO + or LO – input can be terminated to a 50Ω source
with a matching circuit, while the other input is connected
to ground through a 100pF bypass capacitor.
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APPLICATIO S I FOR ATIO
Table 2 shows the differential input impedance of the LO
input port.
Table 2. LO Input Differential Impedance
FREQUENCY
(GHz)
DIFFERENTIAL INPUT
DIFFERENTIAL S11
IMPEDANCE (Ω)
MAG
ANGLE (˚)
1.5
69.3-j59.4
0.469
–45.8
1.6
64.3-j56.4
0.457
–49.8
1.7
60.0-j52.7
0.440
–53.9
1.8
56.4-j48.9
0.421
–58.0
1.9
53.7-j44.9
0.399
–62.2
2.0
51.4-j41.2
0.377
–66.1
2.1
49.8-j37.5
0.352
–69.9
2.2
48.6-j34.2
0.328
–73.3
2.3
47.8-j31.0
0.303
–76.5
2.4
47.3-j28.2
0.279
–79.5
2.5
46.9-j25.6
0.257
–82.3
ended load resistance) should be larger than 600Ω to
assure full gain. The gain is reduced by 20 • log(1 + 120Ω/
RLOAD) in dB when the differential output is terminated by
RLOAD. For instance, the gain is reduced by 6.85dB when
each output pin is connected to a 50Ω load (100Ω differential load). The output should be taken differentially (or
by using differential-to-single-ended conversion) for best
RF performance, including NF and IM2.
The phase relationship between the I-channel output signal and Q-channel output signal is fixed. When the LO
input frequency is larger (or smaller) than the RF input
frequency, the Q-channel outputs (QOUT+, QOUT–) lead (or
lag) I-channel outputs (IOUT+, IOUT–) by 90°.
When AC output coupling is used, the resulting highpass
filter’s –3dB roll-off frequency is defined by the R-C
constant of the blocking capacitor and RLOAD, assuming
RLOAD > 600Ω.
I-Channel and Q-Channel Outputs
Each of the I-channel and Q-channel outputs is internally
connected to VCC though a 60Ω resistor. The output DC
bias voltage is VCC – 0.85V. The outputs can be DC coupled
or AC coupled to the external loads. The differential output
impedance of the demodulator is 120Ω in parallel with a
5pF internal capacitor, forming a lowpass filter with a
–3dB corner frequency at 260MHz. RLOAD (the single-
Care should be taken when the demodulator’s outputs are
DC coupled to the external load, to make sure that the I/Q
mixers are biased properly. If the current drain from each
output exceeds 6mA, there can be significant degradation
of the linearity performance. Each output can sink no more
than 14mA when the outputs are connected to an external
load with a DC voltage higher than VCC – 0.85V. The I/Q
output equivalent circuit is shown in Figure 7.
LT5515
VCC
J1
T1
LDB311G9020C-452
RF
2
2
3
6
1
RF +
L1
10nH
1k
4
3
RF –
1.54V
C1
1nF
NOTE: NO CONNECTION REQUIRED
ACCORDING TO BALUN TRANSFORMER
MANUFACTURER
5515 F05
Figure 5. RF Input Equivalent Circuit with External Matching at 1.9GHz
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APPLICATIO S I FOR ATIO
VCC
J2
T2
LDB311G9010C-440
LO
10
2
6
1
3
LO +
L4
12nH
200Ω
4
11
LO –
C2
1nF
NOTE: NO CONNECTION REQUIRED
ACCORDING TO BALUN TRANSFORMER
MANUFACTURER
5515 F06
Figure 6. LO Input Equivalent Circuit
with External Matching at 1.9GHz
VCC
60Ω
60Ω
60Ω
60Ω
IOUT+
IOUT–
5pF
QOUT
16
15
+
QOUT–
14
13
5pF
5515 F07
Figure 7. I/Q Output Equivalent Circuit
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LT5515
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PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
15
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
16
0.55 ± 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2.15 ± 0.10
(4-SIDES)
2
(UF16) QFN 1004
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5515fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LT5515
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
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RF Power Controller
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LTC1758
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1.8V ≤ VSUPPLY ≤ 5.25V
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400MHz Quadrature Demodulator with RSSI
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80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
LTC5505
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>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
LTC5507
100kHz to 1GHz RF Power Detector
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, SC70 Package
LT5511
High Signal Level Up Converting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
High Signal Level Down Converting Mixer
DC-3GHz, 20dBm IIP3, Integrated LO Buffer
LT5516
800MHz to 1.5GHz Direct Conversion
Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
5515fa
12
Linear Technology Corporation
LT 0406 REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2003