MC10EP58, MC100EP58 3.3V / 5VECL 2:1 Multiplexer Description The MC10/100EP58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and LVEL58 devices. The 100 Series contains temperature compensation. http://onsemi.com Features • 310 ps Typical Propagation Delay • Maximum Frequency > 3 GHz Typical • PECL Mode Operating Range: VCC = 3.0 V to 5.5 V • • • 8 8 with VEE = 0 V NECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State Q Output Will Default LOW with Inputs Open or at VEE Pb−Free Packages are Available 1 SOIC−8 D SUFFIX CASE 751 1 8 HEP58 ALYW G 8 8 1 1 1 8 HP58 ALYWG G 1 KP58 ALYWG G 5U MG G TSSOP−8 DT SUFFIX CASE 948R KEP58 ALYW G DFN8 MN SUFFIX CASE 506AA H K 5U 3P M = MC10 = MC100 = MC10 = MC100 = Date Code 3P MG G • MARKING DIAGRAMS* 1 4 1 4 A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 6 1 Publication Order Number: MC10EP58/D MC10EP58, MC100EP58 Table 1. PIN DESCRIPTION NC Da 1 2 8 7 1 VCC Q MUX Db SEL 3 6 0 4 5 Q PIN FUNCTION Da*, Db* ECL Data Inputs SEL* ECL Select Inputs Q, Q ECL Data Outputs VCC Positive Supply VEE Negative Supply NC No Connect EP Exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply or leave floating open. VEE * Pins will default LOW when left open. Figure 1. 8−Lead Pinout (Top View) and Logic Diagram Table 2. TRUTH TABLE SEL Data H L a b Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor ESD Protection N/A Human Body Model Machine Model Charged Device Model Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 TSSOP−8 DFN8 Flammability Rating Oxygen Index: 28 to 34 Transistor Count > 4 kV > 200 V > 2 kV Pb Pkg Pb−Free Pkg Level 1 Level 1 Level 1 Level 1 Level 3 Level 1 UL 94 V−0 @ 0.125 in 41 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. http://onsemi.com 2 MC10EP58, MC100EP58 Table 4. MAXIMUM RATINGS Rating Unit VCC Symbol PECL Mode Power Supply Parameter VEE = 0 V Condition 1 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V V Iout Output Current Continuous Surge 50 100 mA mA IBB VBB Sink/Source ± 0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 SOIC 8 SOIC 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 SOIC 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 TSSOP 8 TSSOP 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 TSSOP 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder <2 to 3 sec @ 248°C <2 to 3 sec @ 260°C 265 265 °C Pb Pb−Free Condition 2 VI VCC VI VEE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 3) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 3) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single−Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single−Ended) 1365 1690 1460 1755 1490 1815 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 3. All loading with 50 W to VCC − 2.0 V. http://onsemi.com 3 MC10EP58, MC100EP58 Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 4) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 30 39 22 31 40 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 5) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 5) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single−Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single−Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 5. All loading with 50 W to VCC − 2.0 V. Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 6) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 30 39 22 31 40 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 7) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 7) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single−Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single−Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 6. Input and output parameters vary 1:1 with VCC. 7. All loading with 50 W to VCC − 2.0 V. http://onsemi.com 4 MC10EP58, MC100EP58 Table 8. 100EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 8) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 9) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 9) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single−Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single−Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 8. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 9. All loading with 50 W to VCC − 2.0 V. Table 9. 100EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 10) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 11) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 11) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single−Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single−Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 10. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 11. All loading with 50 W to VCC − 2.0 V. http://onsemi.com 5 MC10EP58, MC100EP58 Table 10. 100EP DC CHARACTERISTICS, NECL VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 12) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 13) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 13) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single−Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single−Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 12. Input and output parameters vary 1:1 with VCC. 13. All loading with 50 W to VCC − 2.0 V. Table 11. AC CHARACTERISTICS VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 14) −40°C Symbol Characteristic fmax Maximum Frequency (See Figure 2. Fmax/JITTER) tPLH, tPHL Propagation Delay to Output Differential tJITTER Cycle−to−Cycle Jitter (See Figure 2. Fmax/JITTER) VPP Input Voltage Swing (Differential Configuration) tr tf Output Rise/Fall Times (20% − 80%) Min Typ 25°C Max Min >3 Typ 85°C Max Min >3 Typ Max >3 Unit GHz ps D to Q,Q SEL to Q,Q Q, Q 200 280 380 0.2 <2 150 800 1200 70 120 170 210 310 410 0.2 <2 150 800 1200 80 130 180 220 340 420 0.2 <2 ps 150 800 1200 mV 100 150 200 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 14. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. http://onsemi.com 6 1000 10 900 9 800 8 700 7 600 6 500 5 400 4 ÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ 300 3 200 2 100 0 (JITTER) 0 1000 2000 3000 JITTEROUT ps (RMS) VOUTpp (mV) MC10EP58, MC100EP58 1 4000 5000 6000 FREQUENCY (MHz) Figure 2. Fmax/Jitter Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) http://onsemi.com 7 MC10EP58, MC100EP58 ORDERING INFORMATION Package Shipping† SOIC−8 98 Units / Rail MC10EP58DG SOIC−8 (Pb−Free) 98 Units / Rail MC10EP58DR2 SOIC−8 2500 / Tape & Reel MC10EP58DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel MC10EP58DT TSSOP−8 100 Units / Rail MC10EP58DTG TSSOP−8 (Pb−Free) 100 Units / Rail MC10EP58DTR2 TSSOP−8 2500 / Tape & Reel MC10EP58DTR2G TSSOP−8 (Pb−Free) 2500 / Tape & Reel MC10EP58MNR4 DFN8 1000 / Tape & Reel DFN8 (Pb−Free) 1000 / Tape & Reel SOIC−8 98 Units / Rail MC100EP58DG SOIC−8 (Pb−Free) 98 Units / Rail MC100EP58DR2 SOIC−8 2500 / Tape & Reel MC100EP58DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel MC100EP58DT TSSOP−8 100 Units / Rail MC100EP58DTG TSSOP−8 (Pb−Free) 100 Units / Rail MC100EP58DTR2 TSSOP−8 2500 / Tape & Reel MC100EP58DTR2G TSSOP−8 (Pb−Free) 2500 / Tape & Reel MC100EP58MNR4 DFN8 1000 / Tape & Reel DFN8 (Pb−Free) 1000 / Tape & Reel Device MC10EP58D MC10EP58MNR4G MC100EP58D MC100EP58MNR4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices http://onsemi.com 8 MC10EP58, MC100EP58 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AH −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 1 0.25 (0.010) M Y M 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC10EP58, MC100EP58 PACKAGE DIMENSIONS TSSOP−8 DT SUFFIX PLASTIC TSSOP PACKAGE CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF S M T U V S 0.25 (0.010) B −U− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S M A −V− F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E http://onsemi.com 10 DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ MC10EP58, MC100EP58 PACKAGE DIMENSIONS DFN8 CASE 506AA−01 ISSUE D D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇ ÇÇÇ ÇÇÇ ÇÇÇ TOP VIEW 0.08 C SEATING PLANE MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.00 BSC 1.10 1.30 2.00 BSC 0.70 0.90 0.50 BSC 0.20 −−− 0.25 0.35 A 0.10 C 8X DIM A A1 A3 b D D2 E E2 e K L E (A3) SIDE VIEW A1 C D2 e e/2 4 1 8X L E2 K 8 5 8X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW ECLinPS is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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