AMD AM29BL802CB-120RZI 8 megabit (512 k x 16-bit) cmos 3.0 volt-only burst mode flash memory Datasheet

Am29BL802C
Data Sheet
The following document contains information on Spansion memory products. Although the document
is marked with the name of the company that originally developed the specification, Spansion will
continue to offer these products to existing customers.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
Spansion continues to support existing part numbers beginning with “Am” and “MBM”. To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 22371 Revision C
Amendment 7 Issue Date November 3, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29BL802C
8 Megabit (512 K x 16-Bit)
CMOS 3.0 Volt-only Burst Mode Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 32 words sequential with wrap around (linear
32), bottom boot
■ Embedded Algorithms
■ One 8 Kword, two 4 Kword, one 48 Kword, three
64 Kword, and two 128 Kword sectors
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
■ Single power supply operation
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Read access times
Burst access times as fast as 17 ns at industrial
temperature range (18 ns at extended
temperature range)
Initial/random access times as fast as 65 ns
■ Alterable burst length via BAA# pin
■ Power dissipation (typical)
— Burst Mode Read: 15 mA @ 25 MHz,
20 mA @ 33 MHz, 25 mA @ 40 MHz
— Program/Erase: 20 mA
— Standby mode, CMOS: 3 µA
■ 5 V-tolerant data, address, and control signals
■ Sector Protection
— Implemented using in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Minimum 100,000 erase cycle guarantee
per sector
■ 20-year data retention
■ Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
— Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
asynchronous mode for system boot, but can
immediately be placed into burst mode
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
■ Package Option
— 56-pin SSOP
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 22371 Rev: C Amendment: 7
Issue Date: November 3, 2006
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29BL802C is an 8 Mbit, 3.0 Volt-only burst
mode Flash memory devices organized as 524, 288
words. The device is offered in a 56-pin SSOP
package. These devices are designed to be programmed in-system with the standard system 3.0-volt
VCC supply. A 12.0-volt VPP or 5.0 VCC is not required
for program or erase operations. The device can also
be programmed in standard EPROM programmers.
The device offers access times of 65, 70, 90, and 120
ns, allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
Burst Mode Features
The Am29BL802C offers a Linear Burst mode—a
32 word sequential burst with wrap around—in a
bottom boot configuration only. This devices require
additional control pins for burst operations: Load
Burst Address (LBA#), Burst Address Advance
(BAA#), and Clock (CLK). This implementation allows
easy interface with minimal glue logic to a wide range
of microprocessors/microcontrollers for high performance read operations.
AMD Flash Memory Features
Each device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. The I/O and control
signals are 5V tolerant.
The Am29BL802C is entirely command set compatible
with the JEDEC single-power-supply Flash standard. Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
2
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations during power transitions. The hardware sector protection
feature disables both program and erase operations in
any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
TABLE OF CONTENTS
2
4
4
5
6
6
7
8
DQ7: Data# Polling ................................................................. 21
Table 1. Device Bus Operations .......................................................8
Figure 8. Toggle Bit Algorithm........................................................ 23
Table 5. Write Operation Status ..................................................... 24
This page left intentionally blank. . . . . . . . . . . . .
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .
Requirements for Reading Array Data Array in Asynchronous
(Non-Burst) Mode ..................................................................... 9
Requirements for Reading Array Data in Synchronous
(Burst) Mode ............................................................................. 9
Burst Suspend/Burst Resume Operations ................................ 9
IND# End of Burst Indicator .................................................... 10
Writing Commands/Command Sequences ............................ 10
Program and Erase Operation Status .................................... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 10
Output Disable Mode .............................................................. 11
Table 2. Sector Address Table ........................................................11
Autoselect Mode..................................................................... 12
Table 3. Am29BL802C Autoselect Codes (High Voltage Method) ..12
Sector Protection/Unprotection ............................................... 12
Figure 1. In-system Sector Protect/Unprotect Algorithms ............... 13
Temporary Sector Unprotect .................................................. 14
Figure 2. Temporary Sector Unprotect Operation........................... 14
Hardware Data Protection . . . . . . . . . . . . . . . . . . 14
Low VCC Write Inhibit .............................................................. 14
Write Pulse “Glitch” Protection ............................................... 14
Logical Inhibit .......................................................................... 14
Power-Up Write Inhibit ............................................................ 14
Command Definitions . . . . . . . . . . . . . . . . . . . . . 14
Reading Array Data in Non-burst Mode ................................. 14
Reading Array Data in Burst Mode ......................................... 15
Figure 3. Burst Mode Read with 40 MHz CLK, 65 ns tIACC,
18 ns tBACC Parameters.................................................................. 15
Figure 4. Burst Mode Read with 25 MHz CLK, 70 ns tIACC,
24 ns tBACC Parameters................................................................. 16
Reset Command ..................................................................... 16
Autoselect Command Sequence ............................................ 16
Program Command Sequence ............................................... 16
Unlock Bypass Command Sequence ..................................... 17
Figure 5. Program Operation .......................................................... 17
Chip Erase Command Sequence ........................................... 17
Sector Erase Command Sequence ........................................ 18
Figure 6. Erase Operation............................................................... 18
Erase Suspend/Erase Resume Commands ........................... 18
Asynchronous Mode ............................................................... 18
Burst Mode ............................................................................. 19
General ................................................................................... 19
Command Definitions ............................................................. 20
Figure 7. Data# Polling Algorithm .................................................. 21
RY/BY#: Ready/Busy# ............................................................ 22
DQ6: Toggle Bit I .................................................................... 22
DQ2: Toggle Bit II ................................................................... 22
Reading Toggle Bits DQ6/DQ2 ............................................... 22
DQ5: Exceeded Timing Limits ................................................ 23
DQ3: Sector Erase Timer ....................................................... 23
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 25
Figure 9. Maximum Negative Overshoot Waveform ...................... 25
Figure 10. Maximum Positive Overshoot Waveform...................... 25
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 25
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11. ICC1 Current vs. Time (Showing Active and Automatic
Sleep Currents) .............................................................................. 27
Figure 12. Typical ICC1 vs. Frequency ........................................... 27
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 13. Test Setup..................................................................... 28
Table 6. Test Specifications ........................................................... 28
Key to Switching Waveforms .................................................. 28
Figure 14. Input Waveforms and Measurement Levels ................. 28
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 15. Conventional Read Operations Timings .......................
Figure 16. Burst Mode Read ..........................................................
Figure 17. RESET# Timings ..........................................................
Figure 18. Program Operation Timings..........................................
Figure 19. Chip/Sector Erase Operation Timings ..........................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6 for Erase and Erase
Suspend Operations ....................................................................
Figure 23. Temporary Sector Unprotect Timing Diagram ..............
Figure 24. Sector Protect/Unprotect Timing Diagram ....................
Figure 25. Alternate CE# Controlled Write Operation Timings ......
31
31
32
34
35
36
36
37
37
38
40
Erase and Programming Performance . . . . . . . . 41
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 41
SSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 41
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Physical Dimensions*. . . . . . . . . . . . . . . . . . . . . . 42
SSO056—56-Pin Shrink Small Outline Package .................... 42
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 43
Revision A (June 1, 1999) ...................................................... 43
Revision A+1 (June 25, 1999) ................................................ 43
Revision B (November 29, 1999) ............................................ 43
Revision C (June 20, 2000) .................................................... 43
Revision C+1 (November 16, 2000) ....................................... 43
Revision C+2 (July 22, 2002) ................................................. 43
Revision C+3 (November 22, 2002) ....................................... 43
Revision C+4 (June 4, 2004) .................................................. 44
Revision C+5 (February 28, 2005) ......................................... 44
Revision C+6 (June 29, 2005) ................................................ 44
Revision C7 (November 3, 2006) ........................................... 44
Table 4. Am29BL802C Command Definitions ................................20
Write Operation Status . . . . . . . . . . . . . . . . . . . . 21
November 3, 2006 22371C7
Am29BL802C
3
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Speed
Option
Am29BL802C
Regulated Voltage Range: VCC =3.0–3.6 V
65R
Temperature Range: Industrial (I), Extended (E)
I
E
70R
90R
120R
I, E
I, E
I, E
Max access time, ns (tACC)
65
70
90
120
Max CE# access time, ns (tCE)
65
70
90
120
24
26
26
Max burst access time, ns (tBACC)
17
18
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15
RY/BY#
IND#
VCC
VSS
Sector
Switches
Input/Output
Buffers
RESET#
IND#
Buffer
Erase Voltage
Generator
WE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
STB
Data Latch
Timer
Address Latch
VCC Detector
4
Burst
State
Counter
Burst
Address
Counter
X-Decoder
Y-Gating
Cell Matrix
A3, A4
A0–A4
A0–A18
LBA#
BAA#
CLK
Y-Decoder
STB
A0–A2
A3, A4
A0–A2
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
CONNECTION DIAGRAMS
WE#
RESET#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
NC
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
VSS
CLK
BAA#
November 3, 2006 22371C7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56-Pin SSOP
Am29BL802C
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
LBA#
VCC
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
NC
VSS
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
VCC
IND#
NC
5
D A T A
S H E E T
PIN CONFIGURATION
A0–A18
=
19 addresses
DQ0–DQ15 =
16 data inputs/outputs
CE#
Chip Enable Input. This signal shall be
asynchronous relative to CLK for the
burst mode.
=
OE#
=
Output Enable Input. This signal shall
be asynchronous relative to CLK for
the burst mode.
WE#
=
Write enable. This signal shall be
asynchronous relative to CLK for the
burst mode.
VSS
=
Device ground
NC
=
No connect. Pin not connected
internally
RY/BY#
=
Ready Busy output
CLK
=
Clock Input that can be tied to the
system or microprocessor clock and
provides the fundamental timing and
internal operating frequency. CLK
latches input addresses in conjunction
with LBA# input and increments the
burst address with the BAA# input.
LBA#
=
BAA# Low enables the burst mode
Flash device to read from the next
word when gated with the rising edge
of the clock. Data becomes available
tBACC ns of burst access time after the
rising edge of the clock
BAA # High prevents the rising edge of
the clock from advancing the data to
the next word output. The output data
remains unchanged.
IND#
=
Highest burst counter address
reached. IND# is low at the end of a
32-word burst sequence (when word
Da + 31 is output). The output will
wrap around to Da on the next CLK
cycle (with BAA# low).
RESET#
=
Hardware reset input
Note: The address, data, and control signals (RY/BY#, LBA,
BAA, IND, RESET, OE#, CE#, and WE#) are 5 V tolerant.
LOGIC SYMBOL
19
Load Burst Address input. Indicates
that the valid address is present on the
address inputs.
LBA# Low at the rising edge of the
clock latches the address on the
address inputs into the burst mode
Flash device. Data becomes available
tPACC ns of initial access time after the
rising edge of the same clock that
latches the address.
A0–A18
16
DQ0–DQ15
CLK
CE#
OE#
WE#
IND#
RESET#
LBA#
RY/BY#
BAA#
LBA# High indicates that the address
is not valid
BAA#
6
=
Burst Address Advance input.
Increments the address during the
burst mode operation
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29BL802C
B
65R
Z
I
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
E
= Extended (–40°C to +125°C)
F
= Industrial (–40°C to +85°C) for Pb-free Package
K
= Extended (–40°C to +125°C) for Pb-free Package
PACKAGE TYPE
Z
= 56-Pin Shrink Small Outline Package (SSO056)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29BL802C
8 Megabit (512 K x 16-Bit) CMOS High Performance Burst Mode Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations
Am29BL802CB-65R
ZI, ZE, ZF, ZK
Am29BL802CB-70R
ZI, ZE, ZF, ZK
Am29BL802CB-90R
ZI, ZE, ZF, ZK
Am29BL802CB-120R
ZI, ZE, ZF, ZK
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
For information on full voltage range options (2.7–3.6 V),
please contact AMD.
November 3, 2006 22371C7
Am29BL802C
7
D A T A
S H E E T
DEVICE BUS OPERATIONS
the register serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. Table 1 lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location. The register is composed of latches that store the
commands, along with the address and data information needed to execute the command. The contents of
Table 1.
Operation
CE#
Device Bus Operations
OE# WE# RESET#
CLK
LBA# BAA#
Addresses
(Note 1)
Data
(DQ0–DQ15)
Read
L
L
H
H
X
X
X
AIN
DOUT
Write
L
H
L
H
X
X
X
AIN
DIN
VCC ±
0.3 V
X
X
VCC
± 0.3 V
X
X
X
X
HIGH Z
Output Disable
L
H
H
H
X
X
X
HIGH Z
HIGH Z
Reset
X
X
X
L
X
X
X
X
HIGH Z
Sector Protect (Note 2)
L
H
L
VID
X
X
X
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
Sector Unprotect (Note 2)
L
H
L
VID
X
X
X
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
Temporary Sector Unprotect
X
X
X
VID
X
X
X
AIN
HIGH Z
Load Starting Burst Address
L
X
H
H
L
H
AIN
X
Advance burst to Next address (no data
presented on the data bus
L
H
H
H
H
L
X
HIGH Z
Advance burst to Next address
(appropriate data presented on the data
bus
L
L
H
H
H
L
X
Data Out
DQ0-DQ15
Terminate Current burst Read Cycle
H
X
H
H
X
X
X
HIGH Z
Terminate Current burst Read Cycle;
Start New Burst Read Cycle
L
X
H
H
L
H
AIN
X
Burst Suspend: (All data is retained
internally in the device)
L
H
H
H
H
H
X
HIGH Z
Burst Resume: (Same data as
Burst suspend)
L
L
H
H
H
H
X
Data Out
DQ0–DQ15
Burst Resume: (Incremented data from
Burst Suspend)
L
L
H
H
H
L
X
Data Out
DQ0–DQ15
Standby
Burst Read Operations
X
Legend:
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Notes:
1. Addresses are A18:A0.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
8
Am29BL802C
22371C7 November 3, 2006
D A T A
Requirements for Reading Array Data
Array in Asynchronous (Non-Burst) Mode
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH.
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t C E ) is the delay from the stable
addresses and stable CE# to valid data at the output
pins. The output enable access time is the delay from
the falling edge of OE# to valid data at the output pins
(assuming the addresses have been stable for at least
tACC–tOE time).
The internal state machine is set for reading array
data in the upon device power-up, or after a hardware
reset. This ensures that no spurious alteration of the
memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See “Reading Array Data in Non-burst Mode” for more
information. Refer to the AC Read Operations table for
timing specifications and to Figure 15 for the timing diagram. ICC1 in the DC Characteristics table represents
the active current specification for reading array data.
Requirements for Reading Array Data in
Synchronous (Burst) Mode
The device offers fast 32-word sequential burst reads
and is used to support microprocessors that implement
an instruction prefetch queue, as well as large data
transfers during system configuration.
Three additional pins—Load Burst Address (LBA#),
Burst Address Advance (BAA#), and Clock (CLK)—
allow interfacing to microprocessors and microcontrollers with minimal glue logic. Burst mode read is a synchronous operation tied to the rising edge of CLK. CE#,
OE#, and WE# are asynchronous (relative to CLK).
When the device is in asynchronous mode (after
power-up or RESET# pulse), any signals on the CLK,
LBA#, and BAA# inputs are ignored. The device operates as a conventional flash device, as described in the
previous section.
To enable burst mode operation, the system must issue
the Burst Mode Enable command sequence (see Table
4). After the device has entered the burst mode, the
system must assert Load Burst Address (LBA#) low for
one clock period, which loads the starting address into
November 3, 2006 22371C7
S H E E T
the device. The first burst data is available after the
initial access time (tIACC) from the rising edge of the
CLK that loads the burst address. After the initial
access, subsequent burst data is available tBACC after
each rising edge of CLK.
The device increments the address at each rising edge
of the clock cycles while BAA# is asserted low. The 5bit burst address counter is set to 00000b at the
starting address. When the burst address counter is
reaches 11111b, the device outputs the last word in the
burst sequence, and outputs a low on IND#. If the
system continues to assert BAA#, on the next CLK the
device will output the data for the starting address—the
burst address counter will have “wrapped around” to
00000b. For example, if the initial address is xxxx0h,
the data order will be 0-1-2-3.....28-29-30-31-0-1...; if
the initial address is xxxx2h, the data order will be 2-34-5.....28-29-30-31-0-1-2-3...; if the initial address is
xxxx8h, the data order will be 8-9-10-11.....30-31-0-12-3-4-5-6-7-8-9....; and so on. Data will be repeated if
more than 32 clocks are supplied, and BAA# remains
asserted low.
A burst mode read operation is terminated using one of
three methods:
— In the first method, CE# is asserted high. The
device in this case remains in burst mode;
asserting LBA# low terminates the previous
burst read cycle and starts a new burst read
cycle with the address that is currently valid.
— In the second method, the Burst Disable
command sequence is written to the device. The
device halts the burst operation and returns to
the asynchronous mode.
— In the third method, RESET# is asserted low. All
opertations are immediately terminated, and the
device will revert to the asynchronous mode.
Note that writing the reset command will not terminate
the burst mode.
Burst Suspend/Burst Resume Operations
The device offers Burst Suspend and Burst Resume
operations. When both OE# and BAA# are taken high,
the device removes (“suspends”) the data from the
outputs (because OE# is high), but “holds” the data
internally. The device resumes burst operation when
either OE# and/or BAA# is asserted low. Asserting the
OE# only causes the device to present the same data
that was held during the Burst Suspend operation. As
long as BAA# is high, the device will continue to output
that word of data. Asserting both OE# and BAA# low
resumes the burst operation, and on the next rising
edge of CLK, increments the counter and outputs the
next word of data.
Am29BL802C
9
D A T A
IND# End of Burst Indicator
The IND# output signal goes low when the device is
ouputting the last word of a 32-word burst sequence
(word Da+31). When the starting address was loaded
with LBA#, the 5-bit burst address counter was set to
00000b. The counter increments to 11111b on the
32nd word in the burst sequence. If the system continues to assert BAA# low, on the next CLK the device
will output the starting address data (Da). The burst
address counter will be again set to 00000b, and will
have “wrapped around.”
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to
VIL, and OE# to VIH.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to
program a word, instead of four. The “Program Command Sequence” section has details on programming
data to the device using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select a
sector. The “Command Definitions” section has details
on erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation Status” for more information, and to “AC Characteristics” for
timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
10
S H E E T
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires
standard access time (tCE) for read access when the device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
In the DC Characteristics table, ICC3 and ICC4 represents
the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. ICC4 in the DC
Characteristics table represents the automatic sleep
mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the system
drives the RESET# pin to VIL for at least a period of tRP,
the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state machine
to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept
another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of
tREADY (during Embedded Algorithms). The system can
thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a pro-
Am29BL802C
22371C7 November 3, 2006
D A T A
gram or erase operation is not executing (RY/BY# pin is
“1”), the reset operation is completed within a time of
tREADY (not during Embedded Algorithms). The system
can read data tRH after the RESET# pin returns to VIH.
S H E E T
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 17 for the timing diagram.
Table 2.
Sector Address Table
Sector
A18
A17
A16
A15
A14
A13
A12
Sector Size
Address Range
SA0
0
0
0
0
0
0
X
8 Kwords
00000h–01FFFh
SA1
0
0
0
0
0
1
0
4 Kwords
02000h–02FFFh
SA2
0
0
0
0
0
1
1
4 Kwords
03000h–03FFFh
SA3
0
0
0
X
X
48 Kwords
04000h–0FFFFh
SA4
0
0
1
X
X
X
X
64 Kwords
10000h–1FFFFh
SA5
0
1
0
X
X
X
X
64 Kwords
20000h–2FFFFh
SA6
0
1
1
X
X
X
X
64 Kwords
30000h–3FFFFh
SA7
1
0
X
X
X
X
X
128 Kwords
40000h–5FFFFh
SA8
1
1
X
X
X
X
X
128 Kwords
60000h–7FFFFh
November 3, 2006 22371C7
01, 11
Am29BL802C
11
D A T A
S H E E T
Autoselect Mode
Table 1. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Table 2). Table 1 shows
the remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding
identifier code on DQ7-DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 4. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 3. Am29BL802C Autoselect Codes (High Voltage Method)
Description
A18 A11
to
to
WE# A12 A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
CE#
OE#
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
0001h
Device ID:
Am29BL802CB
(Bottom Boot Block)
L
L
H
X
X
VID
X
L
X
L
H
0081h
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
0001h (protected)
Burst Mode Status
L
L
H
X
X
VID
0000h (unprotected)
X
L
X
H
H
0000h
(non-burst mode)
0001h
(burst mode)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Note: The autoselect codes may also be accessed in-system via command sequences. See Table 4.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program
and erase operations in previously protected sectors.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Sector protection/unprotection can be implemented via
two methods.
12
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 1 shows the algorithms and Figure 24 shows the timing diagram. This
method uses standard microprocessor bus cycle
timing. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect
write cycle.
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices. Details on this method are provided in a supplement, publication
number
22372,
available
on
www.spansion.com.
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 μs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
PLSCNT
= 1000?
Protect another
sector?
No
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 1.
November 3, 2006 22371C7
In-system Sector Protect/Unprotect Algorithms
Am29BL802C
13
D A T A
S H E E T
Temporary Sector Unprotect
HARDWARE DATA PROTECTION
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 2 shows the algorithm, and
Figure 23 shows the timing diagrams, for this feature.
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 4 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
RESET# = VIH
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
Power-Up Write Inhibit
2. All previously protected sectors are protected once
again.
Figure 2.
Temporary Sector Unprotect Operation
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 4 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence resets
the device to reading array data.
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
Reading Array Data in Non-burst Mode
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard
read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs
status data. After completing a programming operation in the Erase Suspend mode, the system may
once again read array data with the same exception.
See “Erase Suspend/Erase Resume Commands” for
more information on this mode.
The device is automatically set to reading array data
after device power-up. No commands are required to
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
All addresses are latched on the falling edge of
WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever
happens first. Refer to the appropriate timing diagrams
in the AC Characteristics section.
14
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
or while in the autoselect mode. See the “Reset Command” section, next.
least the next rising edge of the CLK signal, upon
which the device loads the initial burst address.
See also “Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode” in the “Key to Switching Waveforms” section for more information. The Read
Operations table provides the read parameters, and Figure 15 shows the timing diagram.
2. The system returns LBA# to a logic high. The device
requires that the next rising edge of CLK occur with
LBA# high for proper burst mode operation. Typically, the initial number of CLK cycles depends on
the clock frequency and the rated speed of the device.
Reading Array Data in Burst Mode
3. After the initial data has been read, the system asserts BAA# low to indicate it is ready to read the remaining burst read cycles. Each successive rising
edge of the CLK signal then causes the flash device
to increment the burst address and output sequential burst data.
The device powers up in the non-burst mode. To read
array data in burst mode, the system must write the
four-cycle Burst Mode Enable command sequence
(see Table 4). The device then enters burst mode. In
addition to asserting CE#, OE#, and WE# control signals, burst mode operation requires that the system
provide appropriate LBA#, BAA#, and CLK signals. For
successful burst mode reads, the following events must
occur (refer to Figures 3 and 4 for this discussion):
1. The system asserts LBA# low, indicating to the device that a valid initial burst address is available on
the address bus. LBA# must be kept low until at
Step 1
4. When the device outputs the last word of data in the
32-word burst mode read sequence, the device outputs a logic low on the IND# pin. This indicates to
the system that the burst mode read sequence is
complete.
5. To exit the burst mode, the system must write the
four-cycle Burst Mode Disable command sequence.
The device will also exit the burst mode if powered
down or if RESET# is asserted. The device will not
exit the burst mode if the reset command is written.
Step 2
25 ns
Step 3
25 ns
25 ns
25 ns
25 ns
CLK
LBA#
BAA#
Da +1
Da
Da +2
Data
65 ns
18 ns
18 ns
OE#
Figure 3.
Burst Mode Read with 40 MHz CLK, 65 ns tIACC, 18 ns tBACC Parameters
November 3, 2006 22371C7
Am29BL802C
15
D A T A
Step 1
Step 2
40 ns
S H E E T
Step 3
40 ns
40 ns
40 ns
40 ns
CLK
LBA#
BAA#
Da
Da +1
Da +3
Da +2
Data
70 ns
24 ns
24 ns
24 ns
OE#
Figure 4.
Burst Mode Read with 25 MHz CLK, 70 ns tIACC, 24 ns tBACC Parameters
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
See “AC Characteristics” for parameters, and to Figure
17 for the timing diagram.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
Table 4 shows the address and data requirements. This
method is an alternative to that shown in Table 1, which
16
is intended for PROM programmers and requires VID
on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence.
A read cycle at address 00h retrieves the manufacturer
code. A read cycle at address 01h returns the device
code. A read cycle containing a sector address (SA)
and the address 02h in word mode returns 0001h if that
sector is protected, or 0000h if it is unprotected. Refer
to Table 2 for valid sector addresses. A read cycle at
address 03h returns 0000h if the device is in asynchronous mode, or 0001h if in synchronous (burst) mode.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically generates the program pulses and verifies the programmed
cell margin. Table 4 shows the address and data requirements for the program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7,
DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits.
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation.
START
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1,” or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program words to the device faster than using the standard
program command sequence. The unlock bypass command sequence is initiated by first writing two unlock
cycles. This is followed by a third write cycle containing
the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required
to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 4 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t care for both cycles. The device then returns to
reading array data.
Figure 5 illustrates the algorithm for the program operation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 18 for
timing diagrams.
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 4 for program command sequence.
Figure 5.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 4 shows
the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has
returned to reading array data, to ensure data integrity.
November 3, 2006 22371C7
Am29BL802C
17
D A T A
S H E E T
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these status
bits. When the Embedded Erase algorithm is complete,
the device returns to reading array data and addresses
are no longer latched.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. (Refer to “Write Operation Status” for information on these status bits.)
Figure 6 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 19 for
timing diagrams.
Figure 6 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 19 for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 4 shows the address and data
requirements for the sector erase command sequence.
START
Write Erase
Command Sequence
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the operation. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
18
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 4 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 6.
Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. The Erase Suspend command has a different
effect depending on whether the Flash device is in
Asynchronous Mode or Burst Mode.
Asynchronous Mode
The Erase Suspend command is only valid when the
Flash device is in Asynchronous Mode. During Erase
Suspend operation Asynchronous read/program operations behave normally in non-erasing sectors. However, Erase Suspend operation prevents the Flash
Am29BL802C
22371C7 November 3, 2006
D A T A
device from entering Burst Mode. To enter Burst Mode
either the Erase operation must be allowed to complete
normally, or it can be prematurely terminated by issuing
a Hardware Reset.
Burst Mode
While in Burst Mode the Erase Suspend command is
ignored and the device continues to operate normally in
Burst Mode. If Erase Suspend operation is required,
then Burst Mode must be terminated and Asynchronous Mode initiated.
General
This command is valid only during the sector erase operation, including the 50 µs time-out period during the
sector erase command sequence. The Erase Suspend
command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the
Erase Suspend command during the Sector Erase
time-out immediately terminates the time-out period
and suspends the erase operation. Addresses are
“don’t-cares” when writing the Erase Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However, when
the Erase Suspend command is written during the sector erase time-out, the device immediately terminates
the time-out period and suspends the erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
November 3, 2006 22371C7
S H E E T
read and write timings and command definitions apply.
Note that burst read is not available when the device is
erase-suspended. Only asynchronous reads are allowed. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0.
The system can use DQ7, or DQ6 and DQ2 together,
to determine if a sector is actively erasing or is erasesuspended. See “Write Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
Am29BL802C
19
D A T A
S H E E T
Command Definitions
Cycles
Table 4.
1
1
4
4
Sector Protect Verify (Note 9)
4
555
Burst Mode Status (Note 10)
4
Autoselect
(Note 8)
Command
Sequence
(Note 1)
Read (Note 6)
Reset (Note 7)
Manufacturer ID
Device ID, Bottom Boot Block
Program
Unlock Bypass
Unlock Bypass Program (Note 11)
Unlock Bypass Reset (Note 12)
Chip Erase
Sector Erase
Erase Suspend (Note 13)
Erase Resume (Note 14)
Burst Mode
Burst Mode Enable
Burst Mode Disable
Am29BL802C Command Definitions
First
Addr Data
RA
RD
XXX
F0
555
AA
555
AA
Second
Addr Data
Bus Cycles (Notes 2–5)
Third
Fourth
Addr Data Addr Data
2AA
2AA
55
55
555
555
90
90
X00
X01
AA
2AA
55
555
90
(SA)
X02
555
AA
2AA
55
555
90
X03
4
3
2
2
6
6
1
1
555
555
XXX
XXX
555
555
XXX
XXX
AA
AA
A0
90
AA
AA
B0
30
2AA
2AA
PA
XXX
2AA
2AA
55
55
PD
00
55
55
555
555
A0
20
PA
01
2281
0000
0001
0000
0001
PD
555
555
80
80
555
555
AA
AA
4
4
555
555
AA
AA
2AA
2AA
55
55
555
555
C0
C0
XXX
XXX
01
00
Fifth
Addr Data
2AA
2AA
55
55
Sixth
Addr Data
555
SA
10
30
Legend:
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18–A12 uniquely select any sector.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the read cycle and the fourth cycle of the
autoselect command sequence, all bus cycles are write
cycles.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See “Autoselect Command Sequence” for
more information.
10. The data is 00h if the device is in asynchronous mode and
01h if in synchronous (burst) mode.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
5. Address bits A18–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
12. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass
mode.
6. No unlock or command cycles required when reading array
data.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a
read cycle.
20
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 5 and the following subsections describe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.
Table 5 shows the outputs for Data# Polling on DQ7.
Figure 7 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
Read DQ7–DQ0
Addr = VA
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to reading
array data.
DQ7 = Data?
No
No
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at DQ7–
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. Figure 20, Data#
Polling Timings (During Embedded Algorithms), in the
“AC Characteristics” section illustrates this.
November 3, 2006 22371C7
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29BL802C
Figure 7.
Data# Polling Algorithm
21
D A T A
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 5 shows the outputs for RY/BY#. Figures 15, 17,
18 and 19 shows RY/BY# for read, reset, program, and
erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on “DQ7: Data# Polling”).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
22
S H E E T
Table 5 shows the outputs for Toggle Bit I on DQ6. Figure 8 shows the toggle bit algorithm in flowchart form,
and the section “Reading Toggle Bits DQ6/DQ2” explains the algorithm. Figure 21 in the “AC Characteristics” section shows the toggle bit timing diagrams.
Figure 22 shows the differences between DQ2 and
DQ6 in graphical form. See also the subsection on
“DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 5 to compare outputs
for DQ2 and DQ6.
Figure 8 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
explains the algorithm. See also the DQ6: Toggle Bit I
subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 8 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
must write the reset command to return to reading
array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 8).
START
Read Byte
(DQ0-DQ7)
Address = VA
Read Byte
(DQ0-DQ7)
Address = VA
(Note 1)
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
DQ6 = Toggle?
No
Yes
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
No
DQ5 = 1?
Yes
Read Byte Twice
(DQ 0-DQ7)
Adrdess = VA
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
(Notes
1, 2)
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from “0” to
“1.” The system may ignore DQ3 if the system can
guarantee that the time between additional sector
erase commands will always be less than 50 μs. See
also the “Sector Erase Command Sequence” section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If
DQ3 is “1”, the internally controlled erase cycle has begun; all further commands (other than Erase Suspend)
are ignored until the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 5 shows the outputs for DQ3.
November 3, 2006 22371C7
DQ6 = Toggle?
No
Yes
FAIL
PASS
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Am29BL802C
Figure 8.
Toggle Bit Algorithm
23
D A T A
S H E E T
Table 5. Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
Erase
Suspend
Mode
Embedded Program Algorithm
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
24
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) . . –0.5 V to +13.0 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
All other pins (Note 1). . . . . . . . . . . –0.5 V to +5.5 V
20 ns
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input and I/O pins is –0.5 V.
During voltage transitions, input and I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns. See
Figure 9. Maximum DC voltage on output and I/Os is VCC
+ 0.5 V. During voltage transitions input and I/Os may
overshoot to VCC + 2.0 V for periods up to 20 ns. See
Figure 10.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is -0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up to
20 ns. See Figure 9. Maximum DC input voltage on pin A9
and OE# is +13.0 V which may overshoot to 14.0 V for
periods up to 20 ns.
Figure 9. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. 3.No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be greater
than one second.
4. 4.Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the device at these or any other conditions above those indicated
in the operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
20 ns
20 ns
Figure 10. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –40°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range. . . . . . . 3.0 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
November 3, 2006 22371C7
Am29BL802C
25
D A T A
S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
ILI
Input Load Current
VIN = VSS to 5.5 V,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to 5.5 V,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH, 5 MHz
9
16
mA
ICC2
VCC Active Write Current
(Notes 2, 3, 6)
CE# = VIL, OE# = VIH
20
30
mA
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC±0.3 V
3
10
µA
ICC4
VCC Standby Current During
Reset (Note 2)
RESET# = VSS ± 0.3 V
3
10
µA
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
OE# = VIH
3
10
µA
ICC5
OE# = VIL
8
20
µA
25 MHz
15
30
mA
33 MHz
20
35
mA
40 MHz
25
40
mA
ICC6
VCC Burst Mode Read Current
(Notes 2, 5)
CE# = VIL,
OE# = VIH
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
5.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOH = –2.0 mA, VCC = VCC min
0.85 x VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage (Note
4)
2.3
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 3 µA.
5. 32-word average.
6. Not 100% tested.
26
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
DC CHARACTERISTICS (Continued)
Zero Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 11.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
3.6 V
Supply Current in mA
8
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 12.
November 3, 2006 22371C7
Typical ICC1 vs. Frequency
Am29BL802C
27
D A T A
S H E E T
TEST CONDITIONS
Table 6.
Test Specifications
3.3 V
65R,
70R
Test Condition
2.7 kΩ
Device
Under
Test
CL
Output Load
90R,
120R
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
6.2 kΩ
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 13.
Test Setup
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
1.5 V
Measurement Level
Output
0.0 V
Figure 14.
28
Input Waveforms and Measurement Levels
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Read Operations
Speed Options and
Temperature Ranges
Parameter
65R
JEDEC
Std. Description
tAVAV
tRC
tAVQV
Test Setup
Read Cycle Time (Note 1)
I
E
70R
90R
120R
I, E
I, E
I, E
Unit
Min
65
70
90
120
ns
tACC Address to Output Delay
CE# = VIL
Max
OE# = VIL
65
70
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL Max
65
70
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
17
18
24
26
26
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Note 1)
Max
17
18
24
26
26
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
Output Enable
tOEH
Hold Time (Note 1)
tAXQX
tOH
20
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Min
0
ns
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Notes:
1. Not 100% tested.
2. See Figure 13 and Table 6 for test specifications
November 3, 2006 22371C7
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29
D A T A
S H E E T
AC CHARACTERISTICS
Burst Mode Read
Parameter
Speed Options and Temperature Ranges
65R
JEDEC
Std.
Description
I
E
70R
90R
120R
I, E
I, E
I, E
Unit
70
90
120
ns
24
26
26
ns
Initial Access Time
tIACC
tBACC
LBA# Valid Clock to Output Delay
(See Note)
Burst Access Time
BAA# Valid Clock to Output Delay
Max
Max
65
17
18
tLBAS
LBA# Setup Time
Min
6
ns
tLBAH
LBA# Hold Time
Min
2
ns
tBAAS
BAA# Setup Time
Min
6
ns
tBAAH
BAA# Hold Time
Min
2
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tACS
Address Setup Time to CLK
(See Note)
Min
6
ns
tACH
Address Hold Time from CLK
(See Note)
Min
2
ns
tOE
Output Enable to Output Valid
Max
tOEZ
Output Enable to Output High Z
Max
tCEZ
Chip Enable to Output High Z
Min
tCES
CE# Setup Time to Clock
Min
17
18
24
26
26
ns
20
25
30
30
ns
20
25
30
30
ns
6
ns
Note: Initial valid data will be output after second clock rising edge of LBA# assertion.
30
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 15.
Conventional Read Operations Timings
tCEZ
tCES
CE#
CLK
tLBAS
LBA#
tBAAS
tLBAH
BAA#
tACS
A0: A18
tBAAH
Aa
tBDH
tACH
tBACC
DQ0: DQ15
tIACC
Da
Da + 1
Da + 2
tOE
Da + 3
Da + 31
tOEZ
OE#*
IND#
Figure 16.
November 3, 2006 22371C7
Burst Mode Read
Am29BL802C
31
D A T A
S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See
Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 17.
32
RESET# Timings
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
65R
70R
90R
120R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
65
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
1
sec
35
35
35
50
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
November 3, 2006 22371C7
Am29BL802C
33
D A T A
S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 18.
34
Program Operation Timings
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 19.
November 3, 2006 22371C7
Chip/Sector Erase Operation Timings
Am29BL802C
35
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 21.
36
Toggle Bit Timings (During Embedded Algorithms)
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase
Erase Suspend
Read
Erase
Complete
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 22.
DQ2 vs. DQ6 for Erase and Erase Suspend Operations
Temporary Sector Unprotect
Parameter
JEDEC
Std.
Description
tVIDR
VID Rise and Fall Time (See Note)
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 23. Temporary Sector Unprotect Timing Diagram
November 3, 2006 22371C7
Am29BL802C
37
D A T A
S H E E T
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24.
38
Sector Protect/Unprotect Timing Diagram
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
65R
70R
90R
120R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
65
70
90
120
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWsH1
tWHWH1 Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
1
sec
0
35
35
ns
35
50
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
November 3, 2006 22371C7
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39
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the
device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 25.
40
Alternate CE# Controlled Write Operation Timings
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
5
15
s
Chip Erase Time
45
Word Programming Time
9
360
µs
Chip Programming Time (Note 3)
9
27
s
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 3.0 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
SSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
* For reference only. BSC is an ANSI standard for Basic Space Centering.
November 3, 2006 22371C7
Am29BL802C
41
D A T A
S H E E T
PHYSICAL DIMENSIONS*
SSO056—56-Pin Shrink Small Outline Package
Dwg rev AB; 10/99
42
Am29BL802C
22371C7 November 3, 2006
D A T A
S H E E T
REVISION SUMMARY
Revision A (June 1, 1999)
Burst Mode Read with 40 MHz CLK figure
Changed tBACC for the 65R speed option in the industrial temperature range from 19 to 18 ns.
Initial release.
Revision A+1 (June 25, 1999)
General Description
Corrected the device density in the first paragraph.
Read Operations table
Changed tOE and tDF for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Command Definitions
Reading Array Data in Burst Mode: Added reference to
Figure 3 in the first paragraph.
Burst Mode Read table
Changed tOE and tBACC for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Revision B (November 29, 1999)
Global
All speed options are now offered only at the regulated
voltage range of 3.0 to 3.6 V. The 90 and 120 speed
options now have a tOE of 26 ns at the industrial temperature range. The 70 ns speed option is now available at the extended temperature range.
AC Characteristics
In Figures 17 and 18, deleted tGHWL; modified OE#
waveform.
Physical Dimensions
Updated drawing of SSOP to new version.
Revision C (June 20, 2000)
Global
The “advance information” data sheet designation has
been changed to “preliminary.” Only minor parameter
changes, if any, may occur. Speed, package, and temperature range combinations may also change in future
data sheet revisions.
Distinctive Characteristics
Changed burst access time specification for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Product Selector Guide
Replaced tOE with tBACC to more clearly distinguish
burst mode access from asynchronous access times.
Note however, that in burst mode, tOE and tBACC specifications are identical. Changed t BACC for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Burst Mode Read figure
Corrected BAA# waveform to return high before the
final clock cycle shown.
Erase and Programming Performance table, Erase
and Program Operations table, Alternate CE# Controlled Erase and Program Operations table
Resolved differences in typical sector erase times. The
typical sector erase time for all sectors is 3 sec.
Revision C+1 (November 16, 2000)
Global
Deleted Preliminary status from document. Added
table of contents. Added Figure 1, In-system Sector
Protect/Unprotect Algorithms figure to document (was
missing from previous revisions).
Revision C+2 (July 22, 2002)
Pin Description, IND# End of Burst Indicator
Clarified description of IND# function.
Table 1, Device Bus Operations
In burst read operations section, changed BAA# to “H”
for “Load starting Burst Address” and Terminate
Current Burst Read Cycle; Start New Burst Read
Cycle.”
Requirements for Reading Array Data in Synchronous (Burst) Mode
Modified section to clarify the description of the IND#
and burst read functions.
Burst Sequence Table
Deleted table.
Revision C+3 (November 22, 2002)
Ordering Information
Burn-in processing is no longer available.
Distinctive Characteristics
Changed endurance to 1 million cycles.
Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode
Clarified the description of how to terminate a burst
mode read operation.
Erase Suspend/Erase Resume Command
Sequence
Noted that only asynchronous reads are allowed during
the erase suspend mode, added asynchronous mode
and burst mode section.
November 3, 2006 22371C7
Am29BL802C
43
D A T A
Erase/Program Operations table, Alternate CE#
Controlled Erase/Program Operations table
Changed typical sector erase time from 3 s to 1 s.
Erase and Programming Performance
Changed typical/maximum sector erase time from 3
s/60 s to 5 s/15 s, respectively. Changed typical chip
erase time from 22 s to 45 s. Changed endurance to 1
million cycles.
Revision C+4 (June 4, 2004)
Ordering Information
Changed Extended temperature range to -40°C.
Operating Ranges
Changed Extended temperature range to -40°C.
Revision C+5 (February 28, 2005)
Ordering Information
Changed Extended temperature range to -55°C.
Added Pb-free package information.
S H E E T
Valid Combinations Table
Added Pb-free combinations.
Revision C+6 (June 29, 2005)
Distinctive Characteristics
Changed bullet point value from 1,000,000 to 100,000.
Erase and Programming Performance
Changed values for “Sector Erase Time” and “Chip
Erase Time” parameters. Adjusted notes values from
1,000,000 to 100,000.
Ordering Information
Changed Extended temperature range to -40°C.
Revision C7 (November 3, 2006)
Sector Protection/Unprotection
Corrected reference to programming supplement publication number and location.
Erase and Program Operations table
Changed tBUSY to a maximum specification.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 1999–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are
for identification purposes only and may be trademarks of their respective companies.
Copyright © 2006 Spansion Inc. All Rights Reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof are
trademarks of Spansion Inc. Other names are for informational purposes only and may be trademarks of their respective owners.
44
Am29BL802C
22371C7 November 3, 2006