NTE NTE2383 Mosfet p-channel enhancement mode, high speed switch (compl to nte2382) Datasheet

NTE2383
MOSFET
P–Channel Enhancement Mode,
High Speed Switch
(Compl to NTE2382)
Description:
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.
Features:
D Lower RDS(ON)
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
Absolute Maximim Ratings:
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Continuous Drain Current, ID
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A
Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A
Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Thermal Resistance, Case–to–Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Note
Note
Note
Note
Note
1.
2.
3.
4.
5.
TJ = +25° to +150°C
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Repetitive rating: Pulse width limited by max. junction temperature.
L = 8.5mH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C.
Mounting surface flat, smooth, and greased.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Test Conditions
Min
Typ
Max
Unit
100
–
–
V
VDS = 100V, VGS = 0
–
–
0.25
mA
VDS = 80V, VGS = 0, TJ = +125°C
–
–
1.0
mA
V(BR)DSS VGS = 0, ID = 0.25mA
IDSS
Gate–Body Leakage Current, Forward
IGSS
VGS = 20V
–
–
100
nA
Gate–Body Leakage Current, Reverse
IGSS
VGS = 20V
–
–
–100
nA
2.0
–
4.0
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 0.25mA
Static Drain–Source On–Resistance
rDS(on)
VGS = 10V, ID = 5.3A, Note 2
–
–
0.3
Ω
Forward Transconductance
gFS
VDS ≤ 50V, ID = 5.3A, Note 2
2.0
–
–
mhos
Input Capacitance
Ciss
VDS = 25V, VGS = 0, f = 1MHz
–
835
–
pF
Output Capacitance
Coss
–
357
–
pF
Reverse Transfer Capacitance
Crss
–
94
–
pF
Turn–On Delay Time
td(on)
–
–
60
ns
–
–
140
ns
–
–
140
ns
–
–
140
ns
–
–
58
nC
–
12.6
–
nC
–
16.6
–
ns
–
–
10.5
A
Rise Time
Turn–Off Delay Time
Fall Time
tr
td(off)
VDD = 50V, ID = 10.5A, ZO = 24Ω,
MOSFET switching times are
essentially independent of operating
temperature
tf
Total Gate Charge
Qg
Gate–Source Charge
Qgs
Gate–Drain (“Miller”) Charge
Qgd
VGS = 10V, VDS = 80V, ID = 10.5A,
Gate charge is essentially
independent of operating
temperature
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
(Body Diode)
IS
Pulse Source Current (Body Diode)
ISM
Note 3
–
–
42
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 10.5A, VGS = 0V,
Note 2
–
–
6.3
V
Reverse Recovery Time
trr
TJ = +25°C, IF = 10.5A,
dIF/dt = 100A/µs
–
–
300
ns
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab
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