ADPOW APT40N60JCU2 Isotop boost chopper super junction mosfet power module Datasheet

APT40N60JCU2
ISOTOP® Boost chopper
Super Junction
MOSFET Power Module
K
D
VDSS = 600V
RDSon = 70mW max @ Tj = 25°C
ID = 40A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
· Brake switch
Features
·
G
S
·
·
·
K
S
Benefits
· Outstanding performance at high frequency operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
D
G
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
ISOTOPÒ
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
IFAV
IFRMS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
Tc = 25°C
Tc = 80°C
Max ratings
600
40
30
120
±20
70
290
20
1
1800
30
39
Unit
V
A
V
mW
W
A
mJ
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APT40N60JCU2 – Rev 0 April, 2004
Symbol
VDSS
APT40N60JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V, ID = 250µA
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
600
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 20A
VGS = VDS, ID = 1mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
7015
2565
212
259
Max
Unit
V
25
250
70
3.9
±100
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 300V
ID = 40A
Resistive Switching
VGS = 15V
VBus = 380V
ID = 40A
RG = 1.8W
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 40A, RG = 5Ω
29
pF
nC
111
20
30
115
ns
10
670
980
1100
1206
µJ
µJ
APT website – http://www.advancedpower.com
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APT40N60JCU2 – Rev 0 April, 2004
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1.
APT40N60JCU2
Diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Qrr
trr
Qrr
IRRM
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Typ
1.6
1.9
1.4
Max
1.8
V
250
500
µA
44
Tj = 125°C
Unit
pF
ns
A
nC
ns
nC
A
Thermal and package characteristics
Symbol Characteristic
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Min
Typ
CoolMos
Diode
Junction to Case
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Max
0.43
1.21
20
Unit
°C/W
V
150
300
1.5
°C
N.m
g
29.2
Typical CoolMOS Performance Curve
0.5
0.4
0.35
0.9
0.7
0.3
0.25
0.5
0.2
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
Fig 1, Maximum Effective transient thermal Impedance, Junction to case vs Pulse Duration
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APT40N60JCU2 – Rev 0 April, 2004
Thermal Impedance (°C/W)
0.45
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
APT40N60JCU2
45
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Cas e Te m perature (°C)
Figure 6, DC Drain Current vs Case Temperature
APT website – http://www.advancedpower.com
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APT40N60JCU2 – Rev 0 April, 2004
ID, DC Drain Current (A)
40
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APT40N60JCU2 – Rev 0 April, 2004
APT40N60JCU2
APT40N60JCU2
APT website – http://www.advancedpower.com
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APT40N60JCU2 – Rev 0 April, 2004
Typical Diode Performance Curve
APT website – http://www.advancedpower.com
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APT40N60JCU2 – Rev 0 April, 2004
APT40N60JCU2
APT40N60JCU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Cathode
30.1 (1.185)
30.3 (1.193)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
ISOTOP® is a Registered Trademark of SGS Thomson
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
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APT40N60JCU2 – Rev 0 April, 2004
Dimensions in Millimeters and (Inches)
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