MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE FK7VS-12 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 0 –0 (1.5) 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 1.63Ω ¡ID ............................................................................................ 7A ¡Integrated Fast Recovery Diode (MAX.) ........150ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Conditions VGS = 0V VDS = 0V Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value Ratings 600 ±30 7 21 Unit V V A A 7 21 125 –55 ~ +150 A A W °C –55 ~ +150 1.2 °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current V (BR) GSS IGSS IDSS VGS (th) rDS (ON) Gate-source threshold voltage Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) Unit Min. Typ. Max. ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V 600 ±30 — — — — — — ±10 V V µA VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V — 2 — — — 3 1.25 3.75 1 4 1.63 4.89 mA V Ω V 3.3 — — — 5.5 1100 125 17 — — — — S pF pF pF — — — — 30 30 100 35 — — — — ns ns ns ns — 1.5 2.0 V — — — — 1.0 150 °C/W ns VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω IS = 3A, VGS = 0V Channel to case Thermal resistance Reverse recovery time trr Limits Test conditions IS = 7A, dis/dt = –100A/µs PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 160 120 80 40 0 50 100 150 CASE TEMPERATURE TC (°C) 200 100µs 1ms 100 7 5 3 2 10–1 0 tw=10µs 101 7 5 3 2 10ms TC = 25°C Single Pulse DC 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) TC = 25°C Pulse Test VGS=20V 10V 6V 16 12 8 5V PD = 125W 4 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10 10V TC = 25°C 6V Pulse Test 8 4 2 4V 4V 0 0 10 20 30 40 0 50 24 16 7A 8 3A 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 14A 16 20 TC = 25°C Pulse Test 4.0 3.0 VGS = 10V 20V 2.0 1.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 20 TC = 25°C VDS = 50V Pulse Test 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 12 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5.0 12 8 4 0 8 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 32 0 4 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 0 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 5V PD = 125W 6 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C VDS = 10V Pulse Test 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 Ciss 103 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 3 2 Coss 102 7 5 3 2 Crss DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) tf 3 2 tr td(on) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 101 7 5 5 7 101 2 3 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 40 0 5 7 100 2 3 DRAIN CURRENT ID (A) Tch = 25°C ID = 7A 20 40 60 80 VGS = 0V Pulse Test 32 TC = 125°C 24 16 75°C 8 0 100 25°C 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 td(off) 102 7 5 DRAIN-SOURCE VOLTAGE VDS (V) 20 0 3 2 101 10–1 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) 101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7VS-12 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 3 2 101 7 5 101 7 5 101 3 2 Irr 2 3 5 7 102 100 Tch = 25°C 7 Tch = 150°C 5 3 2 3 5 7 10 SOURCE CURRENT dis/dt (–A/µs) 3 2 3 2 101 7 5 102 trr 7 5 Irr 3 2 101 0 10 3 2 2 3 5 7 101 Tch = 25°C Tch = 150°C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 7A GS = 0V V 3 3 VDD = 250V 2 2 trr 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 D=1 0.5 0.2 0.1 PDM tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 –4 –3 10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999