IXYS IXFB170N30P Polar power mosfet hiperfet Datasheet

Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFB170N30P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
300V
170A
Ω
18mΩ
200ns
PLUS264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
300
300
V
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
ILRMS
IDM
TC = 25°C
Leads Current Limit, RMS
TC = 25°C, pulse width limited by TJM
170
75
500
A
A
A
IA
TC = 25°C
85
A
EAS
TC = 25°C
5
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
20
V/ns
PD
TC = 25°C
1250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
30..120/6.7..27
N/lb.
10
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
FC
Mounting force
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
300
VGS(th)
VDS = VGS, ID = 1mA
2.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
G
D
(TAB)
S
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
• Fast intrinsic diode
• Avalanche Rated
• Unclamped Inductive Switching (UIS)
rated
• Very low Rth results high power
dissipation
• Low RDS(ON) and QG
• Low package inductance
Advantages
• Low gate charge results in simple
drive requirement
• Improved Gate, Avalanche and
dynamic dv/dt ruggedness
• High power density
Applications
V
4.5
V
±200
nA
25
1.5
μA
mA
18
mΩ
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
DS100000(06/08)
IXFB170N30P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 10V, ID = 60A, Note 1
57
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID =0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
95
S
20
nF
2450
pF
27
pF
41
ns
29
ns
79
ns
16
ns
258
nC
82
nC
78
nC
RthJC
0.10
RthCS
°C/W
°C/W
0.13
Source-Drain Diode
PLUS264TM (IXFB) Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
170
A
ISM
Repetitive, pulse width limited by TJM
500
A
VSD
IF = 85A, VGS = 0V, Note 1
1.3
V
trr
QRM
IRM
IF = 85A, -di/dt = 150A/μs
200
ns
μC
A
1.85
21
VR = 100V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB170N30P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
300
VGS = 10V
8V
160
VGS = 10V
8V
250
7V
120
ID - Amperes
ID - Amperes
140
100
6V
80
60
200
7V
150
6V
100
40
50
5V
20
5V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
2
4
6
VDS - Volts
180
12
14
16
18
20
3.2
VGS = 10V
8V
160
140
7V
120
6V
100
80
60
40
VGS = 10V
2.8
RDS(on) - Normalized
ID - Amperes
10
Fig. 4. RDS(on) Normalized to ID = 85A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
2.4
I D = 170A
2.0
I D = 85A
1.6
1.2
5V
0.8
20
0
0.4
0
1
2
3
4
5
6
7
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 85A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
90
2.8
VGS = 10V
2.6
External Lead Current Limit
80
TJ = 125ºC
2.4
70
2.2
ID - Amperes
RDS(on) - Normalized
8
VDS - Volts
2.0
1.8
1.6
60
50
40
30
1.4
20
1.2
TJ = 25ºC
1.0
10
0.8
0
0
50
100
150
200
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
250
300
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFB170N30P
Fig. 7. Input Admittance
Fig. 8. Transconductance
180
200
160
180
TJ = - 40ºC
160
25ºC
140
120
g f s - Siemens
ID - Amperes
140
TJ = 125ºC
25ºC
- 40ºC
100
80
60
120
125ºC
100
80
60
40
40
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
6.5
20
40
60
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
120
140
160
180
200
Fig. 10. Gate Charge
10
350
VDS = 150V
9
I D = 85A
300
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
80
ID - Amperes
200
150
100
6
5
4
3
TJ = 125ºC
2
TJ = 25ºC
50
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
40
VSD - Volts
80
120
160
200
240
280
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
1,000.0
RDS(on) Limit
Ciss
100.0
100µs
ID - Amperes
Capacitance - PicoFarads
25µs
10,000
Coss
1,000
100
10.0
1ms
1.0
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
f = 1 MHz
10
10ms
DC
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
10
100
100ms
1000
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_170N30P(9S) 06-24-08
IXFB170N30P
Fig. 12. Maximum Transient Thermal Impedance
1.000
Z(th)JC - ºC / W
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: F_170N30P(9S) 06-24-08
Similar pages