AP07N70CF/I Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS D ▼ Repetitive Avalanche Rated RDS(ON) ▼ Fast Switching ID G ▼ Simple Drive Requirement 600/675V 1.2Ω 7A S Description AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220FM & TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and costeffectiveness. The TO-220FM & TO-220CFM package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D G D S TO-220FM(F) S TO-220CFM(I) Absolute Maximum Ratings Parameter Symbol Rating Units 600/675 V VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V 7 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 4.4 A - /A V ± 30 1 IDM Pulsed Drain Current 18 A PD@TC=25℃ Total Power Dissipation 37 W 0.3 W/℃ 140 mJ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 7 A EAR Repetitive Avalanche Energy 7 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W Data & specifications subject to change without notice 200218033 AP07N70CF/I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Units VGS=0V, ID=1mA /- 600 - - V VGS=0V, ID=1mA /A 675 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A - - 1.2 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=50V, ID=3.5A - 4.5 - S VDS=670V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V,VGS=0V - - 100 uA Gate-Source Leakage VGS= ± 30V - - ± 100 nA ID=7A - 32 - nC o IDSS Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 8.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC VDD=300V - 17 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=7A - 15 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 35 - ns tf Fall Time RD=43Ω - 18 - ns Ciss Input Capacitance VGS=0V - 2075 - pF Coss Output Capacitance VDS=25V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Min. Typ. - - 7 A - - 18 A - - 1.5 V Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode ) 1 VSD 3 Forward On Voltage Test Conditions VD=VG=0V , VS=1.5V Tj=25℃, IS=7A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP07N70CF(/I)- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 675V Max. Units AP07N70CF/I 12 T C =25 o C V G =10V T C =150 o C 8 V G =10V 10 V G =6.0V V G =5.5V 8 ID , Drain Current (A) ID , Drain Current (A) V G =6.0V V G =5.0V 6 4 V G =5.5V 6 V G =5.0V 4 2 V G =4.0V 2 V G =4.0V 0 0 0 5 10 15 20 0 25 V DS , Drain-to-Source Voltage (V) 10 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3 I D =3.5A V G =10V 2.5 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 2 1.5 1 0.9 0.5 0.8 0 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature -50 0 50 100 o T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP07N70CF/I 40 8 7 ID , Drain Current (A) 6 30 PD (W) 5 4 20 3 2 10 1 0 0 25 50 75 100 125 0 150 50 100 150 Tc , Case Temperature( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 Normalized Thermal Response (R thjc) 1 10 ID (A) 10us 100us 1 1ms 10ms o T c =25 C Single Pulse DUTY=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 0.01 Duty factor = t/T Peak Tj = P DM x Rthjc + TC SINGLE PULSE 100ms 0.1 0.01 1 10 100 1000 10000 V DS (V) Fig 7. Maximum Safe Operating Area 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP07N70CF/I I D =7A 14 Ciss V DS =320V 12 V DS =400V 10 Coss V DS =480V C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 10000 16 8 100 6 4 Crss 2 1 0 0 5 10 15 20 25 30 35 40 45 1 50 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 5 100 4 10 T j = 25 o C 3 IS (A) VGS(th) (V) T j = 150 o C 2 1 1 0 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 o T j , Junction Temperature ( C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP07N70CF/I VDS RD VDS D TO THE OSCILLOSCOPE 0.5x RATED VDS G RG 90% 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q