N08L163WC2C NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview Features The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs • Single Wide Power Supply Range 2.2 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 1.5mA at 3.0V and 1µs(Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.5V • Very fast output enable access time 25ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Ultra Low Power Sort Available Product Family Part Number Package Type Operating Temperature N08L163WC2CZ1 VFBGA Pb-Free -40oC to +85oC Pin Configuration Power Supply (Vcc) Speed 2.2V - 3.6V 55ns Standby Current Operating Current (ISB), (Icc), Typical Typical 2 µA 1.5 mA @ 1MHz Pin Descriptions 1 2 3 4 5 6 A LB OE A0 A1 A2 CE2 B I/O8 UB A3 A4 CE1 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 A17 A7 I/O3 VCC E VCC I/O12 DNU A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC 48 Pin VFBGA (top) 6 x 8 mm Pin Name Pin Function A0-A18 Address Inputs WE CE1, CE2 OE LB UB I/O0-I/O15 Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs VCC Power VSS Ground NC Not Connected Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Functional Block Diagram Word Address Decode Logic Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux Address Inputs A0 - A3 I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 CE2 WE OE UB LB I/O0 - I/O151 MODE POWER H X X X X X High Z Standby2 Standby X L X X X X High Z Standby2 Standby X X X X H H High Z Standby2 Standby L H L X3 L1 L1 Data In Write3 Active L L1 L1 Data Out Read Active H L1 L1 High Z Active Active L L H H H H 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Symbol Test Condition Input Capacitance CIN I/O Capacitance CI/O Min Max Unit VIN = 0V, f = 1 MHz, TA = 25oC 10 pF VIN = 0V, f = 1 MHz, TA = 25oC 10 pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Absolute Maximum Ratings Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 4.5 V Power Dissipation PD 500 mW Storage Temperature TSTG –65 to 150 o Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec C o C Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Test Conditions Min. Typ1 Max Unit 2.2 3.0 3.6 V Item Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH Input Low Voltage VIL Output High Voltage VOH Output Low Voltage VOL Input Leakage Current ILI VIN = 0 to VCC -1 Output Leakage Current ILO OE = VIH or Chip Disabled -1 Chip Disabled 1.5 V Vcc = 2.2V to 2.7V 1.8 VCC+0.3 Vcc = 2.7V to 3.6V 2.2 VCC+0.3 Vcc = 2.2V to 2.7V –0.3 0.6 Vcc = 2.7V to 3.6V –0.3 0.8 IOH = -0.1mA, Vcc = 2.2V 2.0 IOH = -1.0mA, Vcc = 2.7V 2.4 0.4 IOL = 2.1mA, Vcc = 2.7V 0.4 ICC1 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 Read/Write Operating Supply Current @ fmax ICC2 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 Maximum Standby Current ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.6 V Maximum Data Retention Current IDR -L -L -L Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V -L V V IOL = 0.1mA, Vcc = 2.2V Read/Write Operating Supply Current @ 1 µs Cycle Time2 V V 1 µA 1 µA 1.5 3 1.5 3 12.0 20.0 12.0 15.0 2.0 20 2.0 8 10 4 mA mA µA µA 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 3 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 1V/ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 50pF Operating Temperature -40 to +85 oC Timing 55 Item Symbol Read Cycle Time tRC Address Access Time (Random Access) tAA 55 ns Chip Enable to Valid Output tCO 55 ns Output Enable to Valid Output tOE 25 ns Byte Select to Valid Output tLB, tUB 55 ns Chip Enable to Low-Z output tLZ 10 ns Output Enable to Low-Z Output tOLZ 5 ns Byte Select to Low-Z Output tLBZ, tUBZ 10 ns Chip Disable to High-Z Output tHZ 20 ns Output Disable to High-Z Output tOHZ 20 ns Byte Select Disable to High-Z Output tLBHZ, tUBHZ Output Hold from Address Change tOH 10 ns Write Cycle Time tWC 55 ns Chip Enable to End of Write tCW 40 ns Address Valid to End of Write tAW 40 ns Byte Select to End of Write tLBW, tUBW 40 ns Write Pulse Width tWP 40 ns Address Setup Time tAS 0 ns Write Recovery Time tWR 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 25 ns Data Hold from Write Time tDH 0 ns End Write to Low-Z Output tOW 10 ns Min Max Units 55 ns 20 20 ns ns Note: 1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization. 2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us. Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 4 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA, tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA, tHZ CE1 tCO CE2 tLZ tOHZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 5 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW CE1 tCW CE2 tLBW, tUBW LB, UB tAS tWP WE tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) tWR tCW tAS tLBW, tUBW LB, UB tWP WE tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 6 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Data Retention Characteristics Parameter Description Condition Min Typ Max VDR Vcc for Data Retention ICCDR Data Retention Current tCDR Chip Deselect to Data Retention Time 0 ns tR Operation Recovery Time tRC ns 1.5 Vcc = 1.5V, CE ≥ Vcc - 0.2V, VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V V 10 -L Unit 4 µA Data Retention Waveform Data Retention Mode Vcc Vcc(min) VDR ≥ 1.5V tCDR Vcc(min) tR CE1 or LB/UB or CE2 Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 7 N08L163WC2C Advance Information NanoAmp Solutions, Inc. VFBGA Package 0.23±0.05 1.00 MAX D A1 BALL PAD CORNER (3) 1. 0.30±0.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW Z SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. SD e SE 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e BOTTOM VIEW Dimensions (mm) e = 0.75 D 6±0.10 SD SE J K BALL MATRIX TYPE 0.375 0.375 1.125 1.375 FULL E 8±0.10 Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 8 N08L163WC2C Advance Information NanoAmp Solutions, Inc. Ordering Information N08L163WC2CX-XX X L L = Ultra Low Power Sort Temperature I = Industrial, -40°C to 85°C 55 = 55ns Performance Package Type Z1 = 48-ball VFBGA Pb-Free Package Revision History Revision Date Change Description A Oct 6. 2004 Initial Advance Release B Nov 9. 2004 General Update C Jan 14, 2005 General Update © 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments. Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 9