PART OBSOLETE - USE ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 12 V Continuous Collector Current IC Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 A 625 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 100 V IC=100µ A, IE=0 V(BR)CES 100 V IC=100µ A, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 12 V IE=10µ A, IC=0 Collector Cut-Off Current ICBO 100 nA VCB=80V, IE=0 Emitter Cut-Off Current IEBO 100 nA VEB=10V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.0 V IC=250mA, IB=0.25mA Base-Emitter Saturation Voltage VBE(sat) 2 V IC=250mA, IB=0.25mA Static Forward Current hFE Transfer Ratio 10K 8K Transition Frequency fT 100 Output Capacitance Cobo TYP. MAX. IC=100mA, VCE=5V* IC=250mA, VCE=5V* 25 3-16 MHz IC=100mA, VCE=5V f=100MHz pF VCB=10V, f=1MHz