NTE NTE570 Silicon controlled avalanche diode Datasheet

NTE570
Silicon Controlled Avalanche Diode
Absolute Maximum Ratings:
Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V
Allowable Avalanche Current (Square Wave Single Pulse 100µs), IZSM . . . . . . . . . . . . . . . . . . . 1.0A
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
135
–
180
V
Avalanche Voltage
VZ
IZ = 1mA Instantaneous
Reverse Current
IR
VR = 130V
–
–
10
µA
VR = 130V, TA = +100°C
–
–
50
µA
IZ = 1mA
–
0.15
–
V/°C
Reverse Current (High Temperature)
IR(H)
Temperature Dependency of VZ
J
1.070
(27.2)
Min
.291
(7.4)
Max
.032 (0.83) Dia Max
Color Band Denotes Cathode
.165 (4.2)
Dia Max
Similar pages