CEP02N7/CEB02N7 CEI02N7/CEF02N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP02N7 700V 6.6Ω 1.9A 10V CEB02N7 700V 6.6Ω 1.9A 10V CEI02N7 700V 6.6Ω 1.9A 10V CEF02N7 700V 6.6Ω 1.9A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S CEI SERIES TO-262(I2-PAK) G D S G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C - Derate above 25 C TO-220F 1.9 f PD Units V V 1.9 e e A A 6 6 60 32 W 0.48 0.26 W/ C Single Pulsed Avalanche Energy d EAS 125 125 mJ Repetitive Avalanche Current a IAR 2 2 A EAR 5.4 5.4 mJ Repetitive Avalanche Energy a Operating and Store Temperature Range TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 2.1 3.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W 2004.October http://www.cetsemi.com 4 - 10 CEP02N7/CEB02N7 CEI02N7/CEF02N7 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 700 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 700V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 6.6 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 1A 5.5 gFS VDS = 50V, ID = 1A 0.7 S 250 pF 50 pF 30 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω 19 35 ns 26 50 ns 34 70 ns Turn-Off Fall Time tf 15 40 ns Total Gate Charge Qg 14 20 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2A, VGS = 10V 2.5 nC 8.6 nC Drain-Source Diode Characteristics and Maximun Ratings IS g Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD h VGS = 0V, IS = 2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.4A . h.Full package VSD test condition IS = 1.5A , VSD(Max) = 1.6V . 4 - 11 1.9 A 1.5 V 4 CEP02N7/CEB02N7 CEI02N7/CEF02N7 2.5 ID, Drain Current (A) ID, Drain Current (A) 3.0 2.0 1.5 1.0 TJ=150 C 10 0 -55 C 0.5 1.VDS=40V 2.Pulse Test 25 C 0.0 10 0 5 10 15 20 2 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 10 Figure 2. Transfer Characteristics 200 150 100 Coss 50 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 8 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 VGS, Gate-to-Source Voltage (V) 250 1.2 4 VDS, Drain-to-Source Voltage (V) 300 1.3 -1 25 10 10 10 -25 0 25 50 75 100 125 1 VGS=0V 0 -1 0.4 150 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 12 15 10 VDS=480V ID=2A 9 6 3 0 0 1 5 10 15 RDS(ON)Limit 10 0 DC 10 10 20 1ms 10ms -1 TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT RGEN toff tr td(on) VGS 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 t2 0.02 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 0.01 10 Single Pulse -2 10 -5 4 10µs 12 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP02N7/CEB02N7 CEI02N7/CEF02N7 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 13 10 0 10 1 3