EMB3 / UMB3N / IMB3A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 4.7kW IC(MAX.) R1 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (3) (2) (1) (3) EMB3 (SC-107C) 1) Built-In Biasing Resistors. 2) Two DTA143T chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing (6) (2) Inverter circuit, Interface circuit, Driver circuit (4) (3) UMB3N SOT-353 (SC-88) (5) (6) (1) IMB3A SOT-457 (SC-74) lInner circuit IMB3A EMB3 / UMB3N lApplication (5) Collector (6) Base (5) Emitter (4) Collector (4) Base (5) Emitter (6) (1) Emitter (2) Base (3) Collector (3) Emitter (2) Base (1) Collector lPackaging specifications Package Package size (mm) Taping code EMB3 EMT6 1616 T2R 180 8 8,000 B3 UMB3N UMT6 2021 TR 180 8 3,000 B3 IMB3A SMT6 2928 T108 180 8 3,000 B3 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/6 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.C Data Sheet EMB3 / UMB3N / IMB3A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC(MAX.)*1 -100 mA 150 (Total)*3 mW 300 (Total)*4 mW Tj 150 °C Tstg -55 to +150 °C Collector current Collector Power dissipation EMB3 / UMB3N PD IMB3A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= -50mA -50 - - V BVCEO IC= -1mA -50 - - V BVEBO IE= -50mA -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 mA Emitter cut-off current IEBO VEB = -4V - - -0.5 mA VCE(sat) IC / IB= -5mA / -0.25mA - - -0.3 V DC current gain hFE VCE= -5V , IC= -1mA , 100 250 600 - Input resistance R1 - 3.29 4.7 6.11 kW Transition frequency fT *1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz Collector-emitter saturation voltage Conditions *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.06 - Rev.C Data Sheet EMB3 / UMB3N / IMB3A lElectrical characteristic curves(Ta = 25°C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics -10 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) VCE= -5V -1 -0.1 Ta=100ºC 25ºC -40ºC -0.01 -0.001 0 -0.5 -1 -1.5 -2 BASE TO EMITTER VOLTAGE : VBE (V) IB= Ta=25ºC -500μA -450μA -80 -400μA -350μA -300μA -60 -250μA -200μA -40 -150μA -100μA -20 -50μA 0 0 -2 -4 -6 -8 0A -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/6 2012.06 - Rev.C Data Sheet EMB3 / UMB3N / IMB3A lDimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/6 2012.06 - Rev.C Data Sheet EMB3 / UMB3N / IMB3A lDimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/6 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 2012.06 - Rev.C Data Sheet EMB3 / UMB3N / IMB3A lDimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/6 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 2012.06 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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