IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max (TO252) 25 mW ID 35 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 26CN10N 25CN10N 26CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 35 T C=100 °C 25 Unit A Pulsed drain current2) I D,pulse T C=25 °C 140 Avalanche energy, single pulse E AS I D=35 A, R GS=25 W 65 mJ Reverse diode dv /dt dv /dt I D=35 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage3) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 71 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V Rev. 1.09 page 1 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.1 minimal footprint - - 62 6 cm2 cooling area4) - - 40 minimal footprint - - 75 6 cm2 cooling area4) - - 50 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient (TO220, TO262, TO263) R thJA Thermal resistance, junction ambient (TO252, TO251) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=39 µA 2 3 4 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=80 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=35 A, (TO252) - 19 25 mW V GS=10 V, I D=35 A, (TO251) - 19 25 V GS=10 V, I D=35 A, (TO263) - 20 26 V GS=10 V, I D=35 A, (TO220, TO262) - 20 26 - 1.1 - W 19 38 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=35 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.09 page 2 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Parameter Values Symbol Conditions Unit min. typ. max. - 1560 2070 - 232 309 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 16 24 Turn-on delay time t d(on) - 10 15 Rise time tr - 4 6 Turn-off delay time t d(off) - 13 19 Fall time tf - 3 4 Gate to source charge Q gs - 9 12 Gate to drain charge Q gd - 6 8 Switching charge Q sw - 10 14 Gate charge total Qg - 23 31 Gate plateau voltage V plateau - 5.6 - Output charge Q oss - 24 32 nC - - 35 A - - 140 - 1 1.2 - 85 - 165 V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=35 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=50 V, I D=35 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) T C=25 °C V GS=0 V, I F=35 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 1.09 page 3 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 80 40 70 35 60 30 50 25 ID [A] Ptot [W] 1 Power dissipation 40 20 30 15 20 10 10 5 0 0 0 50 100 150 200 0 50 TC [°C] 100 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 10 1 µs 10 µs 102 101 ZthJC [K/W] ID [A] 100 µs 1 ms 1 0.5 0.2 10 ms 100 0.1 DC 0.05 0.02 10-1 0.1 10-1 100 101 102 103 VDS [V] Rev. 1.09 0.01 single pulse page 4 tp [s] 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 100 60 8V 7V 10 V 5V 5.5 V 6V 50 80 6.5 V 40 RDS(on) [mW] ID [A] 60 6V 40 6.5 V 30 7V 8V 20 10 V 5.5 V 20 10 5V 4.5 V 0 0 0 1 2 3 4 5 0 10 20 30 VDS [V] 40 50 60 70 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 80 40 35 60 30 gfs [S] ID [A] 25 40 175 °C 20 20 15 25 °C 10 5 0 0 0 2 4 6 8 VGS [V] Rev. 1.09 0 10 20 30 ID [A] page 5 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=35 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 60 4 3.5 390 µA 3 40 39 µA VGS(th) [V] RDS(on) [mW] 2.5 98 % typ 2 0 1.5 20 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 25 °C Coss 100 IF [A] C [pF] 175 °C 102 Crss 175 °C, 98% 25 °C, 98% 10 101 100 1 0 20 40 60 80 VDS [V] Rev. 1.09 0 0.5 1 1.5 2 VSD [V] page 6 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=35 A pulsed parameter: T j(start) parameter: V DD 100 12 50 V 10 20 V 80 V 100 °C 10 25 °C VGS [V] IAS [A] 8 150 °C 6 4 2 1 0 1 10 100 1000 0 5 tAV [µs] 10 15 20 25 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 115 V GS Qg VBR(DSS) [V] 110 105 V gs(th) 100 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 1.09 page 7 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G PG-TO220-3: Outline Rev. 1.09 page 8 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G PG-TO-263 (D²-Pak) Rev. 1.09 page 9 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G PG-TO262-3-1 (I²PAK) Rev. 1.09 page 10 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G PG-TO252-3: Outline Rev. 1.09 page 11 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.09 page 12 2013-07-09