Kexin BZX84C3V9T Zener diode Datasheet

Diodes
SMD Type
ZENER
DIODES
BZX84C2V4T-BZX84C39T
(KZX84C2V4T-KZX84C39T)
SOT-523
U n it:m m
+0.1
1.6 -0.
1
■ Features
+0.1
1.0 -0.1
+0.05
0.2 -0.05
+0.01
0.1 -0.01
+0.15
1.6-0.
15
1
+0.05
0.8-0.
05
2
● Planar Die Construction
0.55
● Ultra-Small Surface Mount Package
● Lead Free/ROHS Compllant
0.35
3
+0.25
0.3 -0.05
+0.1
0.8-0.
1
+0.05
0.75-0.
05
0.5
+0.1
-0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Forward voltage
@IF=10mA
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage temperature range
Symbol
Rating
Unit
VF
0.9
V
PD
150
mW
RθJA
833
℃/W
TJ
150
Tstg
-65 to 150
℃
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Diodes
SMD Type
BZX84C2V4T-BZX84C39T
(KZX84C2V4T-KZX84C39T)
■ Electrical Characteristics Ta = 25℃
Maximum Ze ner Impeda nce
(Note 2)
Type
Number
Marking
Code
Nom (V)
Min (V)
Max (V)
mA
BZX84C2V4T
RB
2.4
2.2
2.6
5.0
100
600
BZX84C2V7T
RC
2.7
2.5
2.9
5.0
100
BZX84C3V0T
RD
3.0
2.8
3.2
5.0
BZX84C3V3T
RE
3.3
3.1
3.5
BZX84C3V6T
RF
3.6
3.4
BZX84C3V9T
RG
3.9
BZX84C4V3T
RH
4.3
BZX84C4V7T
R1
BZX84C5V1T
BZX84C5V6T
VZ @ IZT
IZT
Maximum
Reverse Current
(Note 1)
@VR
Temperatur e
Coefficient of
Zener Vol tage
@ IZT =。5mA
(mV/ C)
ZZT @ IZT ZZK @ IZK
IZK
Ω
mA
uA
V
Min
Max
1.0
50
1.0
-3.5
0
600
1.0
20
1.0
-3.5
0
95
600
1.0
20
1.0
-3.5
0
5.0
95
600
1.0
5.0
1.0
-3.5
0
3.8
5.0
90
600
1.0
5.0
1.0
-3.5
0
3.7
4.1
5.0
90
600
1.0
3.0
1.0
-3.5
0
4.0
4.6
5.0
90
600
1.0
3.0
1.0
-3.5
0
4.7
4.4
5.0
5.0
80
600
1.0
3.0
2.0
-3.5
0.2
R2
5.1
4.8
5.4
5.0
60
500
1.0
2.0
2.0
-2.7
1.2
R3
5.6
5.2
6.0
5.0
40
480
1.0
1.0
2.0
-2.0
2.5
BZX84C6V2T
R4
6.2
5.8
6.6
5.0
10
400
1.0
3.0
4.0
0.4
3.7
BZX84C6V8T
R5
6.8
6.4
7.2
5.0
15
150
1.0
2.0
4.0
1.2
4.5
BZX84C7V5T
R6
7.5
7.0
7.9
5.0
15
80
1.0
1.0
5.0
2.5
5.3
BZX84C8V2T
R7
8.2
7.7
8.7
5.0
15
80
1.0
0.7
5.0
3.2
6.2
BZX84C9V1T
R8
9.1
8.5
9.6
5.0
15
80
1.0
0.5
6.0
3.8
7.0
BZX84C10T
R9
10
9.4
10.6
5.0
20
100
1.0
0.2
7.0
4.5
8.0
BZX84C11T
P1
11
10.4
11.6
5.0
20
150
1.0
0.1
8.0
5.4
9.0
BZX84C12T
P2
12
11.4
12.7
5.0
25
150
1.0
0.1
8.0
6.0
10.0
BZX84C13T
P3
13
12.4
14.1
5.0
30
150
1.0
0.1
8.0
7.0
11.0
BZX84C15T
P4
15
13.8
15.6
5.0
30
170
1.0
0.1
10.5
9.2
13.0
BZX84C16T
P5
16
15.3
17.1
5.0
40
200
1.0
0.1
11.2
10.4
14.0
BZX84C18T
P6
18
16.8
19.1
5.0
45
200
1.0
0.1
12.6
12.4
16.0
BZX84C20T
P7
20
18.8
21.2
5.0
55
225
1.0
0.1
14.0
14.4
18.0
BZX84C22T
P8
22
20.8
23.3
5.0
55
225
1.0
0.1
15.4
16.4
20.0
BZX84C24T
P9
24
22.8
25.6
5.0
70
250
1.0
0.1
16.8
18.4
22.0
BZX84C27T
PA
27
25.1
28.9
2.0
80
250
0.5
0.1
18.9
21.4
25.3
BZX84C30T
PB
30.0
28.0
32.0
2.0
80
300
0.5
0.1
21.0
24.4
29.4
BZX84C33T
PC
33.0
31.0
35.0
2.0
80
300
0.5
0.1
23.1
27.4
33.4
BZX84C36T
PD
36.0
34.0
38.0
2.0
90
325
0.5
0.1
25.2
30.4
37.4
BZX84C39T
PE
39.0
37.0
41.0
2.0
130
350
0.5
0.1
27.3
33.4
41.2
Notes:
2
Zener Vol tage
Range (Note 1 )
1. Short duration pulse test used to minimize self-heating effect.
2. f = 1KHz.
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R
Diodes
SMD Type
BZX84C2V4T-BZX84C39T
(KZX84C2V4T-KZX84C39T)
■ Typical Characterisitics
250
50
T j = 25°
C
C 2V 7
C 3V 3
C 5V 6
C 4V 7
C 6V 8
40
IZ, ZENER CURRENT (mA)
Pd, POWER DISSIPATION (mW)
S ee Note 1
200
150
100
50
C 8V 2
30
20
Test C urrent I Z
5.0m A
10
0
100
0
200
0
0
TA, AMBIENT TEMPERATURE, °C
Fig. 1. Power Derating Curve
30
C 3V 9
T j = 25°
C
1
2
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
10
1000
C 10
T j= 25 °
C
C 15
20
V R = 1V
CT, TOTAL CAPACITANCE (pF)
IZ, ZENER CURRENT (mA)
C 12
V R = 2V
100
C 18
C 22
10
Test current IZ
5m A
C 27
C 33
C 39
C 36
V R = 1V
V R = 2V
10
1
0
0
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3. Zener Breakdown Characteristics
40
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 4. Total Capacitance vs Nominal Zener Voltage
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