IRF IRF7421D1 Mosfet & schottky diode Datasheet

PD 9.1411
IRF7421D1
PRELIMINARY
l
l
l
l
FETKY T M
HEXFET 
Co-packaged
Power
MOSFET and Schottky Diode
Ideal For Synchronous Regulator
Applications
Generation V Technology
SO-8 Footprint
A
S
S
G
MOSFET & Schottky Diode
1
8
2
7
3
6
4
5
A
A
D
VDSS = 30V
D
D
RDS(on) = 0.035Ω
D
Schottky Vf = 0.42V
To p V ie w
Description
The FETKYTM family of co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator applications.
Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. Combining this technology with International Rectifier's
low forward drop Schottky rectifiers results in an extremely
efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe
for enhanced thermal characteristics. The SO-8 package is
designed for vapor phrase, infra red or wave soldering
techniques.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Junction and Storage Temperature Range
Units
6.4
4.1
3.3
33
2.5
1.0
8.0
± 20
-55 to + 150
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
100
125
RθJA
Junction-to-Amb. (PCB Mount, steady state)**
40
50
°C/W
RθJA
Junction-to-Amb. _Schottky *
100
125
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ ISD ≤ 4.1A, di/dt ≤ 110A/µs, V DD ≤ V (BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
HEXFET is the registered trademark for International Rectifier Power MOSFETs )
IRF7421D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Min.
30
–––
–––
1.0
4.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
2.2
5.9
6.7
27
20
16
510
200
84
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
0.035
VGS = 10V, ID = 4.1A ƒ
Ω
0.060
VGS = 4.5V, I D = 2.1A ƒ
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 15V, ID = 2.1A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
-100
V GS = -20V
nA
100
VGS = 20V
27
ID = 4.1A
3.3
nC VDS = 24V
8.9
VGS = 10V, See Fig. 6 and 9 ƒ
–––
VDD = 15V
–––
I D = 4.1A
ns
–––
RG = 6.2Ω
–––
RD = 3.7Ω, See Fig. 10 ƒ
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– 1.3
A
–––
33
––– 1.0
V
TJ = 25°C, IS = 4.1A, VGS = 0V
57
86
ns
TJ = 25°C, IF = 4.1A
93 140
nC
di/dt = 100A/µs ƒ
Schottky Diode Maximum Ratings
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.0
A
4.0
150
15
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 132°C
50% Duty Cycle. Rectangular Wave, Tc = 117°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.60
V
0.42
0.55
0.10
mA
15
100 pF
5200 V/ µs
Conditions
If = 1.0, Tj = 25°C
If = 2.0, Tj = 25°C
If = 1.0, Tj = 125°C
If = 2.0, Tj = 125°C .
Vr = 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
IRF7421D1
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
TOP
I D , D ra in -to -S o u rce C u rre n t (A )
I D , Dra in-to -S o u rce Cu rre n t (A )
TOP
10
3 .0V
1
0.1
20 µs P U LSE W IDTH
TJ = 25 °C
A
1
10
3 .0V
20 µs P U LSE W IDTH
TJ = 15 0°C
A
1
10
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics,
TJ = 150oC
Fig 1. Typical Output Characteristics,
TJ = 25oC
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
100
TJ = 1 5 0 °C
TJ = 2 5 ° C
10
V DS = 1 0 V
2 0 µ s P U L SE W ID TH
1
3.0
3.5
4.0
4.5
5.0
5.5
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
V D S , D rain-to-S ource Voltage (V)
6.0
A
I D = 4.1A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7421D1
V GS
C is s
C rs s
C o ss
C , C a p a c ita n c e (p F )
800
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G a te -to -S o u rc e V o lta g e (V )
1000
V DS = 24V
V DS = 15V
16
C is s
600
I D = 4.1 A
12
C os s
400
C rs s
200
0
10
4
FO R TEST C IRC U IT
SEE FIG UR E 9
0
A
1
8
0
100
5
V D S , Drain-to-Source V oltage (V)
15
20
25
A
30
Q G , T otal G ate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
O PER ATIO N IN T HIS AR EA LIMITE D
BY R DS (on)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
10
10
TJ = 15 0°C
TJ = 25 °C
VG S = 0 V
1
0.4
0.8
1.2
1.6
2.0
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
10
100µ s
1m s
1
10m s
T A = 25 °C
T J = 15 0°C
S in gle Pu lse
0.1
0.1
A
1
10
100
V D S , D rain-to-S ource Voltage (V)
Fig 8. Maximum Safe Operating Area
IRF7421D1
10V
RD
VDS
QG
VGS
QGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
T her m al R e spon se ( Z th J A )
1000
100
D = 0.50
0.20
0.10
10
0.05
P
DM
0.02
t
0.01
1
1
t2
N otes :
1 . D uty fac tor D = t
S INGLE P ULS E
(THE RMAL RESP O NSE)
0.1
0.00001
0.0001
0.001
1
/ t
2
2 . P ea k TJ = P D M x Z th J A + T A
0.01
0.1
1
10
100
t 1 , R ectan gula r P ulse D u ratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
A
1000
IRF7421D1
10
R e ve rse C u rre n t - I R ( m A)
In sta n ta n e o u s F o rw a rd C u rr e n t - I F (A )
100
T J = 1 5 0 °C
10
TJ = 1 5 0 °C
1
125°C
100°C
0.1
75°C
5 0 °C
0.01
2 5 °C
0.001
T J = 1 2 5 °C
A
0.0001
1
T J = 2 5 °C
0
10
20
30
R e ve r se Vo lta g e - V R ( V)
Fig. 13 - Typical Values of Reverse Current
Vs. Reverse Voltage
0.1
0.0
0.2
0.4
0.6
0.8
Fo r w a r d Vo lta g e D ro p - V FM ( V)
Fig. 12 - Max. Forward Voltage Drop Characteristics
1.0
Ju n ctio n C a p a cita n ce - C T (p F )
1000
T J = 2 5 °C
100
A
10
0
10
20
30
R e ve r se Vo lta g e - V R (V )
Fig. 14 - Typical Junction Capacitance Vs.
Reverse Voltage
IRF7421D1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
Period
P.W.
D=
D.U.T. ISD Waveform
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
-
VDD
P.W.
Period
VGS=10V
Reverse
Recovery
Current
+
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* V GS = 5V for Logic Level Devices
Fig 20. For N-Channel HEXFETS
ISD
*
IRF7421D1
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
5
A
6
2
3
5
H
0 . 2 5 ( .0 1 0 )
4
e
6X
M
A M
θ
e1
0 . 1 0 (.0 0 4 )
0 .2 5 (. 0 1 0 )
L
8X
A1
B 8X
M
6
C
8X
C A S B S
M IN
MA X
.05 32
.0688
1 .35
1. 75
.00 40
.0098
0 .10
0. 25
B
.01 4
.018
0 .36
0. 46
C
.0075
.0 098
0 .19
0.25
D
.189
.1 96
4 .80
4.98
E
.15 0
.157
3 .81
3. 99
e1
A
-C -
M IL LIM ET ER S
M AX
A1
e
K x 45 °
IN C H ES
M IN
.05 0 BA SIC
1.27 BA SIC
.02 5 BA SIC
0 .635 BA SIC
H
.2284
.2 440
K
.01 1
.019
0 .28
5 .80
0. 48
6.20
L
0.16
.050
0 .41
1.2 7
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
NO TE S :
1 . D IM E N S IO N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M -1 9 8 2 .
2 . C O N T R O L L I N G D IM E N S IO N : I N C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L I M E T E R S ( IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L I N E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 2 5 (. 0 0 6 ) .
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
0.72 ( .02 8 )
8X
6 .4 6 ( . 2 5 5 )
1 .7 8 (. 0 7 0 )
8X
1 .27 ( .05 0 )
3X
2. 05 (. 08 0 )
1. 95 (. 07 7 )
TE R M IN A TIO N
NUMB E R 1
1 .8 5 (.0 7 2)
4. 10 (. 16 1 )
1 .6 5 (.0 6 5)
3. 90 (. 15 4 )
1. 60 (. 06 2 )
1. 50 (. 05 9 )
0. 35 (. 01 3 )
0. 25 (. 01 0 )
E X A M P L E : T H I S IS A N I R F 7 1 0 1
5. 55 (. 21 8 )
5. 45 (. 21 5 )
1
FEE D D IR EC TIO N
5 . 30 (. 20 8)
5 . 10 (. 20 1)
312
2. 20 (. 08 6 )
2. 00 (. 07 9 )
6 .5 0 (.2 5 5)
6 .3 0 (.2 4 8)
D A TE C O D E (Y W W )
Y = L A S T D IG I T O F TH E Y E A R
1 2. 30 (. 48 4 )
1 1. 70 (. 46 1 )
2 .6 0 (.1 0 2)
1 .5 0 (.0 5 9)
8 .1 0 (.3 18 )
7 .9 0 (.3 11 )
Part Marking (IRF7101 example)
I N T E R N A TI O N A L
R E C TI FI E R
LO G O
W W = W EEK
F7 1 0 1
TOP
P A RT NUM B E R
W A FE R
L O T C OD E
(L A S T 4 D I G IT
Tape and Reel
WW)
T O F TH E Y E A R
1 3 .2 0 (. 51 9 )
1 2 .8 0 (. 50 4 )
1 5. 40 (. 60 7 )
1 1. 90 (. 46 9 )
X X XX
2
W AFER
LO T C O DE
(L A S T 4 D I G IT S )
1 8 .4 0 (. 7 24 )
M AX 3
N OT ES :
1 C O N FO R M S TO EIA -48 1 -1
2 IN C LU D ES F LA N G E D IST OR T ION @ O U TE R E D GE
3 D I M EN S IO N S M E AS U R E D @ H U B
B O TTO M
50 .0 0
(1 .9 6 9)
MIN.
3 3 0. 00
(1 3 .0 00 )
M AX .
14 . 40 (.5 6 6)
12 . 40 (.4 4 8)
3
4 C O N TR OL L IN G D IM E N S IO N : M ET R IC
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
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10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice. 3/96