AP9960GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
40V
RDS(ON)
16mΩ
ID
G
42A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9960GJ) are
available for low-profile applications.
GD
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
42
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
26
A
195
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
45
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201105313
AP9960GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.032
-
V/℃
VGS=10V, ID=20A
-
-
16
mΩ
VGS=4.5V, ID=18A
-
-
25
mΩ
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=32V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=20A
-
18
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=20V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
110
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500
-
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V
-
22
-
ns
dI/dt = 100A/us
-
27.4
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9960GH/J-HF
120
200
10V
8.0V
ID , Drain Current (A)
150
6.0V
100
80
6.0V
40
V G =4.0V
50
V G =4.0V
0
0
0.0
1.0
2.0
3.0
0
4.0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
50
I D =20A
T C =25 ℃
I D =20A
V G =10V
Normalized RDS(ON)
40
RDS(ON) (mΩ)
10V
8.0V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
30
20
1.4
1.0
10
0.6
0
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
T j =150 o C
VGS(th) (V)
IS(A)
10
T j =25 o C
1.5
1
1.0
0
0.5
0.0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9960GH/J-HF
f=1.0MHz
10000
12
V DS =12V
V DS =16V
V DS =20V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =20A
10
6
C iss
1000
4
C oss
C rss
2
100
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
ID (A)
10us
100us
10
1ms
T c =25 o C
Single Pulse
10ms
100ms
1
0.1
1
10
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.001
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4