ON BC849CLT3G General purpose transistor Datasheet

BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
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• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V
•
ESD Rating − Machine Model: >400 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Vdc
1
80
50
30
SOT−23
CASE 318
STYLE 6
Vdc
6.0
6.0
5.0
100
MARKING DIAGRAM
mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
2
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Characteristic
3
65
45
30
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
XX M G
G
1
XX = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 10
1
Publication Order Number:
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage BC846A,B
(IC = 10 mA, VEB = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
15
5.0
nA
mA
hFE
−
−
−
90
150
270
−
−
−
−
110
200
180
290
220
450
420
520
800
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
pF
−
−
−
−
10
4.0
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
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2
dB
BC846ALT1G Series
BC846A, BC847A, BC848A
200
VCE = 1 V
25°C
−55°C
100
0
0.18
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
300
0.001
0.01
0.1
0.08
0.06
−55°C
0.04
0.02
0.0001
0.001
0.01
0.1
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.10
IC, COLLECTOR CURRENT (A)
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.12
IC, COLLECTOR CURRENT (A)
1.0
0.9
150°C
0.14
0
1
IC/IB = 20
0.16
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
0.1
BC846ALT1G Series
BC846A, BC847A, BC848A
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 6. Base−Emitter Temperature Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 5. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 7. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 8. Current−Gain − Bandwidth Product
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4
50
BC846ALT1G Series
BC846B
0.30
VCE = 1 V
150°C
500
400
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
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5
0.1
BC846ALT1G Series
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
BC846B
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
Figure 13. Collector Saturation Region
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
0.5
5.0
20
1.0 2.0
10
VR, REVERSE VOLTAGE (VOLTS)
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 14. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
VCE = 5 V
TA = 25°C
500
200
100
50
20
100
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitance
Figure 16. Current−Gain − Bandwidth Product
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6
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B
0.30
VCE = 1 V
150°C
500
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
400
25°C
300
−55°C
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
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7
0.1
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 22. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 21. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 23. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 24. Current−Gain − Bandwidth Product
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8
50
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C
900
hFE, DC CURRENT GAIN
0.30
150°C
VCE = 1 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1000
800
700
25°C
600
500
400 −55°C
300
200
100
0
0.001
0.01
0.1
0.10
−55°C
0.05
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
25°C
0.15
IC, COLLECTOR CURRENT (A)
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
150°C
0.20
0
1
1.1
1.0
IC/IB = 20
0.25
0.0001
0.001
0.01
0.1
1.2
1.1
VCE = 5 V
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
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9
0.1
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
TA = 25°C
5.0
Cib
3.0
Cob
2.0
1.0
0.4
0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 30. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 29. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 31. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 32. Current−Gain − Bandwidth Product
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10
50
BC846ALT1G Series
100 mS 10 mS
1S
0.1
IC, COLLECTOR CURRENT (A)
1
1 mS
Thermal Limit
0.01
0.001
1
10
100
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.1
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
0.1
1S
Thermal Limit
0.01
0.001
1 mS
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
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11
100
BC846ALT1G Series
ORDERING INFORMATION
Device
Marking
BC846ALT1G
BC846ALT3G
1A
BC846BLT1G
BC846BLT3G
1B
BC847ALT1G
BC847ALT3G
1E
BC847BLT1G
BC847BLT3G
1F
BC847CLT1G
BC847CLT3G
BC848ALT1G
1G
1J
BC848BLT1G
BC848BLT3G
1K
BC848CLT1G
BC848CLT3G
1L
BC849BLT1G
BC849BLT3G
2B
BC849CLT1G
BC849CLT3G
BC850BLT1G
BC850CLT1G
2C
Package
Shipping†
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
2F
SOT−23
(Pb−Free)
2G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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12
BC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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