2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 600 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N4401 625 5.0 83.3 *MMBT4401 350 2.8 200 357 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4401/MMBT4401, Rev A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V IBL Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA 2N4401 / MMBT4401 NPN General Purpose Amplifier ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 20 40 80 100 40 0.75 300 0.4 0.75 0.95 1.2 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance Ceb Emitter-Base Capacitance hie Input Impedance hre Voltage Feedback Ratio hfe Small-Signal Current Gain hoe Output Admittance IC = 20 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 250 MHz 6.5 pF 30 pF 1.0 15 kΩ 0.1 8.0 x 10 40 500 1.0 30 µmhos 15 ns ns -4 SWITCHING CHARACTERISTICS td Delay Time VCC = 30 V, VEB = 2 V, tr Rise Time IC = 150 mA, IB1 = 15 mA 20 ts Storage Time VCC = 30 V, IC = 150 mA 225 ns tf Fall Time IB1 = IB2 = 15 mA 30 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 3 (continued) V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.4 β = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic 320 TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) V CE = 10 V T A = 25oC 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT I C= 10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 2.4 V CE = 10 V I C = 10 mA 2 h re h fe 1.6 hoe 1.2 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 h ie 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 100 2N4401 / MMBT4401 NPN General Purpose Amplifier (continued) Test Circuits 30 V 200 Ω 16 V Ω 1.0 KΩ 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Timer 6.0 V - 1.5 V NOTE: BV EBO = 5.0 V 1k 30 V Ω 1.0 KΩ 0 ≤ 200ns 50 Ω FIGURE 2: Saturated Turn-Off Switching Time 37 Ω 2N4401 / MMBT4401 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G