CGP30 and DGP30 Vishay Semiconductors New Product formerly General Semiconductor Clamper/Damper Glass Passivated Rectifier DO-201AD Reverse Voltage 1400 to 1500V Forward Current 3.0A Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • 3.0 ampere operation at TA=50°C with no thermal runaway • Typical IR less than 0.1µA • Capable of meeting environmental standards of MIL-S-19500 • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension * d e t n e t Pa 1.0 (25.4) Min. 0.210 (5.3) 0.190 (4.8) Dia. 0.375 (9.5) 0.285 (7.2) ® Mechanical Data 1.0 (25.4) Min. 0.052 (1.32) 0.048 (1.22) Dia. Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306 Case: JEDEC DO-201AD, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.04 oz., 1.12 g Packaging codes/options: 1/Bulk - 1.5K per container, 15K per box 4/1.4K per 13" reel, 5.6K per box 23/1K per ammo mag., 9K per box Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol CGP30 DGP30 Unit Maximum repetitive peak reverse voltage VRRM 1400 1500 V Maximum RMS voltage VRMS 980 1050 V Maximum DC blocking voltage VDC 1400 1500 V Maximum average forward rectified current 0.375” (9.5mm) lead length at TA = 50°C IF(AV) 3.0 A Peak forward surge current 8.3ms single half sine wave superimposed on rated load (JEDEC Method) at TA = 50°C IFSM 100 A Maximum full load reverse current full cycle average 0.375” (9.5mm) lead length at TA = 70°C IR(AV) 200 µA RΘJA 20 °C/W TJ, TSTG –65 to +175 °C Typical thermal resistance (Note 1) Operating junction and storage temperature range Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current at rated DC blocking voltage TA = 25°C TA = 100°C Maximum reverse recovery time at IF = 0.5A, IR = 50mA Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A typical maximum Typical junction capacitance at 4.0V, 1MHz CGP30 DGP30 Unit VF 1.2 V IR 5.0 100 µA trr 15 20 µs trr 1.0 2.0 µs CJ 40 pF Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, with leads attached to heat sink Document Number 88569 03-Jan-03 www.vishay.com 1 CGP30 and DGP30 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 200 60 HZ Resistive or Inductive Load 3.0 2.0 1.0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 4.0 100 0.375" (9.5mm) Lead Length 0 10 0 25 50 100 75 125 150 100 10 1 175 Ambient Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 10 Instantaneous Reverse Current (µA) 30 Instantaneous Forward Current (A) TA = 50°C 8.3ms Single Half Sine-Wave (JEDEC Method) 10 1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle 0.1 0.01 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 Instantaneous Forward Voltage (V) TJ = 100°C 1.0 0.1 TJ = 25°C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance 100 Junction Capacitance (pF) TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 10 1 10 100 Reverse Voltage (V) www.vishay.com 2 Document Number 88569 03-Jan-03