ADPOW APTM20HM08F Full - bridge mosfet power module Datasheet

APTM20HM08F
Full - Bridge
MOSFET Power Module
VDSS = 200V
RDSon = 8mW max @ Tj = 25°C
ID = 208A @ Tc = 25°C
Application
·
·
·
·
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
·
·
·
OUT1
G1
VBUS
G2
0/VBUS
S1
S2
S3
S4
G3
G4
·
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
OUT2
·
·
·
·
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
208
155
832
±30
8
781
100
50
3000
Unit
V
A
V
mW
W
A
May, 2004
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20HM08F– Rev 1
Symbol
VDSS
APTM20HM08F
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
VGS = 0V, ID = 375µA
Min
200
Typ
Tj = 25°C
Tj = 125°C
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
VGS = 10V, ID = 104A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
3
Max
Unit
V
375
1500
8
5
±150
mW
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
VGS = 10V
VBus = 100V
ID = 208A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
Eon
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
nF
nC
106
134
32
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 208A
RG = 2.5W
Rise Time
Typ
14.4
4.6
0.3
280
64
ns
88
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω
1698
µJ
1858
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 208A, RG = 2.5Ω
1872
µJ
1972
Source - Drain diode ratings and characteristics
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
Typ
Tj = 25°C
Max
208
155
1.3
5
230
Tj = 125°C
450
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 208A
IS = -208A
VR = 133V
diS/dt = 200A/µs
IS = -208A
VR = 133V
diS/dt = 200A/µs
Tj = 25°C
1.8
Tj = 125°C
6.8
Unit
A
V
V/ns
ns
µC
May, 2004
trr
Test Conditions
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
w dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR £ VDSS Tj £ 150°C
IS £ - 208A di/dt £ 700A/µs
APT website – http://www.advancedpower.com
2–6
APTM20HM08F– Rev 1
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery w
APTM20HM08F
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Min
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Torque
Mounting torque
2500
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.16
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM20HM08F– Rev 1
May, 2004
Package outline
APTM20HM08F
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.06
0.3
0.04
Single Pulse
0.1
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VGS=15V
600
10V
500
9V
400
8.5V
300
8V
7.5V
200
7V
100
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
500
400
300
200
TJ=25°C
100
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
1.2
Normalized to
VGS=10V @ 104A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
250
RDS(on) vs Drain Current
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
0.8
200
150
100
50
0
0
50
100
150
200
ID, Drain Current (A)
250
300
25
50
75
100
125
150
TC, Case Temperature (°C)
May, 2004
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM20HM08F– Rev 1
ID, Drain Current (A)
Transfert Characteristics
600
ID, Drain Current (A)
700
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 104A
2.0
1.5
1.0
0.5
0.0
-50 -25
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100µs
100
1ms
10ms
10
100ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=208A
VDS=40V
12
TJ=25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
May, 2004
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
APT website – http://www.advancedpower.com
5–6
APTM20HM08F– Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20HM08F
APTM20HM08F
Delay Times vs Current
Rise and Fall times vs Current
160
120
td(on)
40
tr and tf (ns)
td(on) and td(off) (ns)
60
120
td(off)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
80
100
tr
60
40
20
0
0
0
50
100 150 200 250 300 350
ID, Drain Current (A)
0
6
3
Eoff
Eon
2
1
Switching Energy (mJ)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
50
100 150 200 250 300 350
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
0
VDS=133V
ID=208A
TJ=125°C
L=100µH
5
Eoff
4
3
Eon
2
1
0
50
100 150 200 250 300 350
0
5
ID, Drain Current (A)
200
150
100
50
0
25
50
75
100 125 150 175 200
20
25
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM20HM08F– Rev 1
May, 2004
ID, Drain Current (A)
15
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
250
10
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
Frequency (kHz)
tf
80
20
Eon and Eoff (mJ)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
140
100
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