PHILIPS MMBT2222 Npn switching transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
MMBT2222A
NPN switching transistor
Product specification
2000 Apr 11
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Switching and linear amplification.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT2907A.
3
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
MMBT2222A
1
2
2
7C∗
Top view
MAM255
Note
1. ∗ = p: made in Hong Kong.
Fig.1 Simplified outline (SOT23) and symbol.
∗ = t: made in Malaysia.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
600
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tamb ≤ 25 °C; note 1
V
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11
2
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
500
K/W
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector cut-off current
MIN.
MAX.
IE = 0; VCB = 60 V
−
10
nA
IE = 0; VCB = 60 V; Tj = 125 °C
−
10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
10
hFE
DC current gain
IC = 0.1 mA; VCE = 10 V
35
−
IC = 1 mA; VCE = 10 V
50
−
IC = 10 mA; VCE = 10 V
75
−
IC = 10 mA; VCE = 10 V;
Tamb = −55 °C
35
−
IC = 150 mA; VCE = 10 V
100
300
IC = 150 mA; VCE = 1 V
50
−
IC = 500 mA; VCE = 10 V
40
VCEsat
VBEsat
collector-emitter saturation voltage
base-emitter saturation voltage
UNIT
−
IC = 150 mA; IB = 15 mA; note 1 −
300
mV
IC = 500 mA; IB = 50 mA; note 1 −
1
V
IC = 150 mA; IB = 15 mA; note 1 0.6
1.2
V
IC = 500 mA; IB = 50 mA; note 1 −
2
V
pF
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
8
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV;
f = 1 MHz
−
25
fT
transition frequency
IC = 20 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V;
RS = 1 kΩ; f = 1 kHz
−
4
dB
−
35
ns
−
15
ns
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2000 Apr 11
3
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
2000 Apr 11
4
oscilloscope
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2000 Apr 11
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Apr 11
6
Philips Semiconductors
Product specification
NPN switching transistor
MMBT2222A
NOTES
2000 Apr 11
7
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Date of release: 2000
Apr 11
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