TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10(1) 2.0 30 -65 to +200 Vdc Vdc Vdc Adc Max. 3.33 Unit 0 C/W Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current IC 0 Total Power Dissipation JAN JANTX JANTXV 2N3999 (2) @ TA = +25 C @ TC = +1000C (3) Operating & Storage Junction Temperature Range PT TJ, Tstg Adc W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol 1) This value applies for tp ≤ 1.0 ms, duty cycle ≤ 50% 2) Derate linearly 11.4 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC > +1000C RθJC TO-111* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CEO 80 Vdc V(BR)CBO 100 Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 50 mAdc Collector-Emitter Breakdown Voltage IC = 10 µAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 0 Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 8.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 ICEO 10 µAdc ICES 200 ηAdc IEBO 200 10 ηAdc µAdc 120101 Page 1 of 2 2N3996, 2N3997, 2N3998, 2N3999 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. 30 40 15 120 60 80 20 240 Unit ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 50 mAdc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 50 mAdc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 2.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 5.0 Adc, IB = 0.5 Adc Base-Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 5.0 Adc, IB = 0.5 Adc 2N3996, 2N3998 hFE 2N3997, 2N3999 0.25 2.0 Vdc 0.6 1.2 1.6 Vdc 3.0 12 VCE(sat) VBE(sat) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo 150 pF SAFE OPERATING AREA DC Tests TC = 1000C, 1 Cycle, t = 1.0 s Test 1 VCE = 80 Vdc, IC = 0.08 Adc Test 2 VCE = 20 Vdc, IC = 1.5 Adc (4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2