Fairchild FQI15P12 120v p-channel mosfet Datasheet

®
FQB15P12 / FQI15P12
120V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
-15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
S
!
D
G!
●
●
▶ ▲
G
S
I2-PAK
D2-PAK
FQB Series
G D S
●
FQI Series
!
D
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB15P12 / FQI15P12
-120
Units
V
-15
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
-10.6
A
(Note 1)
-60
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1157
mJ
IAR
Avalanche Current
(Note 1)
-15
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
10
-5.0
3.75
mJ
V/ns
W
100
0.67
-55 to +175
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
1.5
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQB15P12 / FQI15P12
QFET
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-120
--
--
V
--
-0.13
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = -120 V, VGS = 0 V
--
--
-1
µA
VDS = -96 V, TC = 150°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -7.5 A
--
0.17
0.2
Ω
gFS
Forward Transconductance
VDS = -40 V, ID = -7.5 A
--
9.5
--
S
--
850
1100
pF
--
310
400
pF
--
110
140
pF
ns
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -60 V, ID = -15 A,
RG = 25 Ω
(Note 4, 5)
VDS = -96 V, ID = -15 A,
VGS = -10 V
(Note 4, 5)
--
15
40
--
100
210
ns
--
80
170
ns
--
80
170
ns
--
29
38
nC
--
5.1
--
nC
--
15
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-15
ISM
--
--
-60
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -15 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -15 A,
dIF / dt = 100 A/µs
(Note 4)
--
126
--
ns
--
0.61
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.0mH, IAS = -15.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -15A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQB15P12 / FQI15P12
Electrical Characteristics
FQB15P12 / FQI15P12
Typical Characteristics
2
2
10
10
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
1
10
1
-I D, Drain Current [A]
-ID, Drain Current [A]
Top :
0
10
10
o
175 C
o
25 C
0
10
o
-55 C
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
10
-1
-1
0
10
10
1
10
10
2
4
6
8
10
-VGS, Gate-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.9
-I DR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
0.8
0.7
VGS = -10V
0.6
0.5
0.4
VGS = -20V
0.3
0.2
0.1
※ Note : TJ = 25℃
1
10
175℃ 25℃
0
10
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
-1
0.0
0
20
40
10
60
0.0
0.5
1.0
-ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
2.5
3.0
3.5
4.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
2200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
2000
1800
VDS = -30V
10
1400
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
1200
1000
Crss
800
600
400
200
0
-1
10
-V GS , Gate-Source Voltage [V]
Ciss
1600
Capacitance [pF]
1.5
-VSD, Source-Drain voltage [V]
VDS = -60V
VDS = -96V
8
6
4
2
※ Note : ID = -15A
0
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
0
10
20
30
40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, December 2003
FQB15P12 / FQI15P12
Typical Characteristics
(Continued)
3.0
1.2
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -7.5 A
0.5
0.0
-100
200
-50
o
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
20
Operation in This Area
is Limited by R DS(on)
2
10
15
-I D, Drain Current [A]
-I D, Drain Current [A]
100 µs
1 ms
10 ms
1
10
DC
0
10
※ Notes :
10
5
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
-VDS, Drain-Source Voltage [V]
150
175
D = 0 .5
※ N o te s :
1 . Z θ J C( t) = 1 .5 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t)
0 .1
-1
0 .0 5
0 .0 2
0 .0 1
PDM
s in g le p u ls e
t1
Z
10
125
Figure 10. Maximum Drain Current
vs. Case Temperature
0 .2
10
100
0
θ JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQB15P12 / FQI15P12
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
t on
VDD
VGS
RG
td(on)
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
tp
ID
RG
VDD
DUT
-10V
tp
©2003 Fairchild Semiconductor Corporation
VDD
Time
VDS (t)
ID (t)
IAS
BVDSS
Rev. A, December 2003
FQB15P12 / FQI15P12
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Compliment of DUT
(N-Channel)
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
VDS
( DUT )
VSD
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQB15P12 / FQI15P12
Package Dimensions
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2-PAK
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
(Continued)
I2-PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQB15P12 / FQI15P12
Package Dimensions
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OPTOPLANAR™
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
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2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
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when properly used in accordance with instructions for use
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result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I6