DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD63 Ripple blocking diode Product specification Supersedes data of November 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode BYD63 FEATURES DESCRIPTION • Glass passivated Cavity free cylindrical glass package through Implotec(1) technology. This package is hermetically sealed • High maximum operating temperature and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward current transients and oscillations k handbook, 4 columns • Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies a MAM123 Fig.1 Simplified outline (SOD81) and symbol. • Available in ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF(AV) average forward current IFRM repetitive peak forward current CONDITIONS MIN. MAX. − 300 UNIT V − 300 V averaged over any 20 ms period; Ttp = 55 °C; lead length = 10 mm; see Fig.2; see also Fig.4 − 0.85 A averaged over any 20 ms period; Tamb = 65 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 − 0.45 A Ttp = 55 °C − 8.25 A Tamb = 65 °C − 4.45 A t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 5 A IFSM non-repetitive peak forward current Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 10 2 Philips Semiconductors Product specification Ripple blocking diode BYD63 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS MIN. TYP. MAX. UNIT IF = 1 A; Tj = Tj max; see Fig.5 − − 1.7 V IF = 1 A; see Fig.5 − − 2.3 V VR = VRRMmax; see Fig.6 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.6 − − 100 µA − − 350 ns tfr forward recovery time when switched to IF = 1 A in 50 ns; see Fig.9 ton turn-on time when switched from VF = 0 V to VF = 3 V; measured between 10% and 90% of IF max; see Fig.11 500 − − ns trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 − − 150 ns Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.7 − 17 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT 60 K/W 120 K/W Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of Handbook SC01.’ 1996 Jun 10 3 Philips Semiconductors Product specification Ripple blocking diode BYD63 GRAPHICAL DATA MLC303 1.6 MLC304 0.8 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 0.6 1.2 lead length 10 mm 0.8 0.4 0.4 0.2 0 0 100 0 T tp ( oC) 200 0 100 a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MLC302 3 200 Tamb ( o C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MLC301 6 handbook, halfpage handbook, halfpage IF (A) P (W) a = 3 2.5 2 1.57 2 4 1.42 2 1 0 0 0 0.5 I F(AV) (A) 1.0 0 1 2 3 4 V F (V) 5 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jun 10 Fig.5 4 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Product specification Ripple blocking diode BYD63 MGA853 3 10halfpage handbook, MLC305 102 handbook, halfpage IR (µA) Cd (pF) 102 10 10 1 1 100 0 T j ( o C) 1 200 102 V R (V) 103 f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.6 10 Reverse current as a function of junction temperature; maximum values. Fig.7 50 handbook, halfpage Diode capacitance as a function of reverse voltage; typical values. MGC500 handbook, halfpage V F 25 100% 110% 7 50 t fr t IF 2 3 10% t MGA200 Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. 1996 Jun 10 Fig.9 Forward recovery time definition. 5 Philips Semiconductors Product specification Ripple blocking diode BYD63 handbook, full pagewidth 3V VF DUT (V) 0 50 Ω 10 Ω 100% 90% IF (A) 10% 0 ton MBH530 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 10 ns. Fig.10 Test circuit and turn-on time waveform and definition. handbook, full pagewidth IF (A) DUT + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.11 Test circuit and reverse recovery time waveform and definition. 1996 Jun 10 6 MAM057 Philips Semiconductors Product specification Ripple blocking diode BYD63 PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 max 28 min 3.8 max 28 min MBC051 Dimensions in mm. The marking band indicates the cathode. Fig.12 SOD81. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 10 7