BM100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz. PACKAGE STYLE .500 6L FLG FEATURES: • Common Emitter • PG = 8.5 dB at 20 W/175 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 20 A VCEO 33 V VCES 65 V VEBO 4.0 V PDISS 270 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 0.65 C/W O O O O O O CHARACTERISTICS 1 = COLLECTOR 3&4 = EMITTER O TC = 25 C NONETEST CONDITIONS SYMBOL 2 = BASE MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 33 V BVCES IC = 100 mA 65 V BVEBO IE = 5.0 mA 4.0 V hFE VCE = 5.0 V 10 --- CCB VVB = 28 V PG ηC VCC = 28 V IC = 1.0 A f = 1.0 MHz POUT = 100 W f = 175 MHz 200 pF 60 dB % 8.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1