TSC BAS16 225mw smd switching diode Datasheet

BAS16
225mW SMD Switching Diode
Small Signal Diode
SOT-23
F
A
Features
—Low power loss, high current capability, low VF
B
—Surface device type mounting
E
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
C
G
D
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Unit (mm)
Dimensions
Mechanical Data
Unit (inch)
Min
Max
Min
Max
—Case : SOT- 23 small outline plastic package
A
1.50
1.70
0.059
0.067
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
B
3.55
3.85
0.140
0.152
C
0.45
0.65
0.018
0.026
—High temperature soldering guaranteed: 260°C/10s
D
2.60
2.80
0.102
0.11
—Weight : 0.008gram (approximately)
E
1.05
1.25
0.041
0.049
F
0.08
0.15
0.003
0.006
G
0.02 REF
0.50 REF
Ordering Information
Part No.
Package
Packing
BAS116 RF
SOT-23
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current @ t= 0.001s
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
Value
Units
PD
225
mW
VRRM
75
V
Io
150
mA
IFSM
2
A
RθJA
375
°C/W
TJ, TSTG
-65 to + 150
°C
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
IR=
100μA
IF=
1.0mA
IF=
10mA
IF=
50mA
IF=
150mA
Reverse Leakage Current
VR=
75V
Junction Capacitance
VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
Symbol
Min
Max
Units
V(BR)
75
-
V
0.715
0.855
V
VF
-
IR
-
1
uA
CJ
-
2.0
pF
Trr
-
6.0
ns
1.0
1.25
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=10mA, RL=100Ω, IRR=1mA
Version : B09
BAS16
225mW SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 2 Reverse Current vs Reverse
FIG 1 Typical Forward Characteristics
1000
10
Reverse Current (uA)
Forward Current (mA)
100
Ta=25°C
1
100
10
0.1
1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
20
40
Forward Voltage (V)
FIG 3 Admissible Power Disspation Curve
80
100
120
FG 4 Typical Junction Capacitance
300
1.4
250
1.3
Junction Capacitance (pF)
Power Dissipation (mW)
60
Reverse Voltage (V)
200
150
100
50
1.2
1.1
1
0.9
0
0
25
50
75
100
125
Ambient Tempeture (°C)
150
175
0.8
0
8
16
24
32
40
Reverse Voltage (V)
Version : B09
Similar pages