MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. http://onsemi.com Features 500 mW Rating on FR−4 or FR−5 Board Wide Zener Reverse Voltage Range − 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (> 16 kV) per Human Body Model SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available* SOD−123 CASE 425 STYLE 1 1 Cathode MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 xx M G MAXIMUM RATINGS Rating Total Power Dissipation on FR−5 Board, (Note 1) @ TL = 75C Derated above 75C xx M G G = Device Code (Refer to page 3) = Date Code = Pb−Free Package (Note: Microdot may be in either location) Symbol PD Thermal Resistance, (Note 2) Junction−to−Ambient RqJA Thermal Resistance, (Note 2) Junction−to−Lead RqJL Junction and Storage Temperature Range 2 Anode TJ, Tstg Max Units 500 6.7 mW mW/C 340 150 −55 to +150 ORDERING INFORMATION Device Package Shipping† C/W MMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel C/W SZMMSZ4xxxT1G SOD−123 (Pb−Free) 3,000 / Tape & Reel MMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel SZMMSZ4xxxT3G SOD−123 (Pb−Free) 10,000 / Tape & Reel C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal Resistance measurement obtained via infrared Scan Method. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 9 1 Publication Order Number: MMSZ4678T1/D MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR IR VF IZT Zener Voltage Regulator http://onsemi.com 2 V MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 3) VZ (Volts) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA Volts MMSZ4678T1G CC 1.71 1.8 1.89 50 7.5 1 MMSZ4679T1G CD 1.90 2.0 2.10 50 5 1 MMSZ4680T1G CE 2.09 2.2 2.31 50 4 1 Device* MMSZ4681T1G CF 2.28 2.4 2.52 50 2 1 MMSZ4682T1G CH 2.565 2.7 2.835 50 1 1 MMSZ4683T1G CJ 2.85 3.0 3.15 50 0.8 1 MMSZ4684T1G CK 3.13 3.3 3.47 50 7.5 1.5 MMSZ4685T1G CM 3.42 3.6 3.78 50 7.5 2 MMSZ4686T1G CN 3.70 3.9 4.10 50 5 2 MMSZ4687T1G CP 4.09 4.3 4.52 50 4 2 MMSZ4688T1G CT 4.47 4.7 4.94 50 10 3 MMSZ4689T1G CU 4.85 5.1 5.36 50 10 3 MMSZ4690T1G/T3G CV 5.32 5.6 5.88 50 10 4 MMSZ4691T1G CA 5.89 6.2 6.51 50 10 5 MMSZ4692T1G CX 6.46 6.8 7.14 50 10 5.1 MMSZ4693T1G CY 7.13 7.5 7.88 50 10 5.7 MMSZ4694T1G CZ 7.79 8.2 8.61 50 1 6.2 MMSZ4695T1G DC 8.27 8.7 9.14 50 1 6.6 MMSZ4696T1G DD 8.65 9.1 9.56 50 1 6.9 MMSZ4697T1G DE 9.50 10 10.50 50 1 7.6 MMSZ4698T1G DF 10.45 11 11.55 50 0.05 8.4 MMSZ4699T1G DH 11.40 12 12.60 50 0.05 9.1 MMSZ4700T1G DJ 12.35 13 13.65 50 0.05 9.8 MMSZ4701T1G DK 13.30 14 14.70 50 0.05 10.6 MMSZ4702T1G DM 14.25 15 15.75 50 0.05 11.4 DN 15.20 16 16.80 50 0.05 12.1 DP 16.15 17 17.85 50 0.05 12.9 MMSZ4705T1G DT 17.10 18 18.90 50 0.05 13.6 MMSZ4706T1G DU 18.05 19 19.95 50 0.05 14.4 MMSZ4707T1G DV 19.00 20 21.00 50 0.01 15.2 MMSZ4708T1G DA 20.90 22 23.10 50 0.01 16.7 MMSZ4709T1G DX 22.80 24 25.20 50 0.01 18.2 MMSZ4710T1G DY 23.75 25 26.25 50 0.01 19.0 EA 25.65 27 28.35 50 0.01 20.4 MMSZ4712T1G EC 26.60 28 29.40 50 0.01 21.2 MMSZ4713T1G ED 28.50 30 31.50 50 0.01 22.8 MMSZ4714T1G EE 31.35 33 34.65 50 0.01 25.0 MMSZ4715T1G EF 34.20 36 37.80 50 0.01 27.3 MMSZ4716T1G EH 37.05 39 40.95 50 0.01 29.6 MMSZ4717T1G EJ 40.85 43 45.15 50 0.01 32.6 MMSZ4703T1G † MMSZ4704T1G MMSZ4711T1G † 3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C. *Include SZ-prefix devices where applicable. †MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel http://onsemi.com 3 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series 8 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS 7 6 TYPICAL TC VALUES 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 100 TYPICAL TC VALUES VZ @ IZT 10 1 12 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range − 55C to +150C) 1000 Ppk , PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) 1.2 1.0 PD versus TL 0.8 0.6 PD versus TA 0.4 0.2 0 0 25 50 75 100 T, TEMPERATURE (5C) 125 RECTANGULAR WAVEFORM, TA = 25C 100 10 1 0.1 150 Figure 3. Steady State Power Derating 10 PW, PULSE WIDTH (ms) 100 1000 Figure 4. Maximum Nonrepetitive Surge Power 1000 1000 IZ = 1 mA TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( ) 1 100 5 mA 20 mA 10 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 10 150C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0.6 0C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series TYPICAL CHARACTERISTICS 1000 TA = 25C 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) I R , LEAKAGE CURRENT ( A) 1000 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150C 0.1 0.01 0.001 +25C 0.0001 -55C 0.00001 0 10 Figure 7. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 8. Typical Leakage Current 100 100 TA = 25C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 5 90 MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 ÂÂÂÂ ÂÂÂÂ 1 HE DIM A A1 b c D E HE L q E 2 MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 STYLE 1: PIN 1. CATHODE 2. ANODE q L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 0 C SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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